325MW Search Results

dt7132

Abstract: IDT7132 IDT7142
Contextual Info: IDT7132SA/LA IDT7142SA/LA HIGH SPEED 2K x 8 DUAL PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 25/35/55/100ns max. – Commercial: 20/25/35/55/100ns (max.) Low-power operation – IDT7132/42SA Active: 325mW (typ.)

IDT71321

Abstract: IDT71421 1421S
Contextual Info: IDT71321SA/LA HIGH SPEED IDT71421SA/LA 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS Features ◆ ◆ ◆ ◆ High-speed access – Commercial: 20/25/35/55ns max. – Industrial: 55ns (max.) Low-power operation – IDT71321/IDT71421SA — Active: 325mW (typ.)

Contextual Info: PRELIMINARY DRAM 4 MEG X 4 DRAM 5.0V FAST PAGE MODE FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single power supply : +5V ±10% • Low power, 3m W standby; 325mW active, typical Al

IDT71V321

Contextual Info: HIGH SPEED 3.3V 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS IDT71V321S/L IDT71V421S/L Features ◆ ◆ ◆ ◆ ◆ High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation – IDT71V321/IDT71V421S — Active: 325mW (typ.)

IC 7142

Abstract: 82C482
Contextual Info: i t IDT HIGH SPEED 2K x 8 DUAL PORT STATIC RAM F e a tu re s * * High-speed access * * - Military: 25/35/55/100ns max. - Commercial: 20/25/35/55/100ns (max.) * Low-power operation * - IDT7132/42SA Active: 325mW (typ.) Standby: 5mW (typ.) - IDT7132/42LA Active: 325mW (typ.)

Contextual Info: HIGH SPEED 3.3V 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS IDT71V321S/L IDT71V421S/L Features ◆ ◆ ◆ ◆ High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation – IDT71V321/IDT71V421S — Active: 325mW (typ.)

Contextual Info: ELPAQ EMS256K8B 35 - 55ns A division of ELMO Semiconductor Corp. 2Mb CMOS STATIC SRAM FEATURES High density SRAM module Organized as 262,144 x 8 Access time 35 - 55ns Low power consumption Standby: 100pW typ. Operating: 325mW(typ.) Power supply voltage 5V±10%

IDT71V321

Contextual Info: HIGH SPEED 3.3V 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS IDT71V321S/L IDT71V421S/L Features ◆ ◆ ◆ ◆ ◆ High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation – IDT71V321/IDT71V421S — Active: 325mW (typ.)

Contextual Info: SPE ELPAQ D • TOODSf l O ^ 0000015 OTO ■ ELPfl ELPA 3 EMS256K8B ^ _ _ _ _ ^ 3^^5 5 n ^ 2Mb CMOS STATIC SRAM FEATURES ■ High density SRAM module ■ Organized as 262,144 x 8 ■ Access time 35 - 55ns ■ Low power consumption Standby: 100pW(typ. Operating: 325mW(typ.)

Contextual Info: HIGH SPEED 3.3V 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS IDT71V321S/L IDT71V421S/L Features ◆ ◆ ◆ ◆ ◆ High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation – IDT71V321/IDT71V421S — Active: 325mW (typ.)

Contextual Info: PRELIMINARY M T4C4M 4A1/B1 4 M EG X 4 DRAM v iic n o N DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single power supply : +5V ±10% • Low pow'er, 3mW standby; 325mW active, typical (A l

Contextual Info: ADVANCE MT4C4M4D1 4 MEG X 4 DRAM M IC R O N DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single power supply: +5V ±10% • Low power, 5mW standby; 325mW active, typical

Contextual Info: PRELIMINARY MT4C4M4A1/B1 4 MEG X 4 DRAM MICRON DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single power supply : +5V ±10% • Low power, 3mW standby; 325mW active, typical Al

Contextual Info: PRELIMINARY DRAM 16 MEG X 1 DRAM FAST PAGE MODE FEATURES • Industry standard xl pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single power supply: +5V +10% only or +3.3V +10% only • Low power, 3mW standby; 325mW active, typical 5V

MS6130L-90PDC

Abstract: AC1237
Contextual Info: r , MOSEL ' 1K X 8 CMOS DUAL PORT SRAM MS6130/40 i . \ January 1987 DESCRIPTION FEATURES • • High-speed— 55/70/90ns Max. Low Power dissipation 325mW (Typ.) Operating 5 |j,W(Typ.) Standby •^ S in g le 5V power supply • Fully static operation • All inputs and outputs directly TTL compatible

10GHz Bandwidth PIN Photodetector 1550nm

Abstract: 10GHz Bandwidth PIN Photodetector photodetector 1550nm photodetector photodetector 1550nm pin 10gb ATA7601D1 ATA7600D1 32um transimpedance amplifier 5 GHz photodetector dwdm
Contextual Info: ATA7601D1 5.0V 10 Gb/s TIA Preliminary Data Sheet - Rev 0 FEATURES GND • 10 Gb/s Differential Output TIA • +5V Power Supply • Low Group Delay • Small Size: 0.85mm x 0.914mm • 325mW typ power dissipation VCC GND VOUT IIN V OUT GND APPLICATIONS •

7050SA

Abstract: IDT71321 IDT71421
Contextual Info: IDT71321SA/LA HIGH SPEED IDT71421SA/LA 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS Features ◆ ◆ ◆ ◆ High-speed access – Commercial: 20/25/35/55ns max. – Industrial: 25/55ns (max.) Low-power operation – IDT71321/IDT71421SA — Active: 325mW (typ.)

71V321L

Abstract: IDT71V321
Contextual Info: HIGH SPEED 3.3V 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS Features ◆ ◆ ◆ ◆ ◆ High-speed access – Industrial: 25ns max. – Commercial: 25/35/55ns (max.) Low-power operation – IDT71V321/IDT71V421S — Active: 325mW (typ.) — Standby: 5mW (typ.)

marking code diode a4l

Abstract: LA6565 IDT7132 IDT7142
Contextual Info: IDT7132SA/LA IDT7142SA/LA HIGH SPEED 2K x 8 DUAL PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 25/35/55/100ns max. – Commercial: 20/25/35/55/100ns (max.) Low-power operation – IDT7132/42SA Active: 325mW (typ.)

TF 321s

Abstract: IDT71V321
Contextual Info: HIGH SPEED 3.3V 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Industrial: 25ns max. – Commercial: 25/35/55ns (max.) Low-power operation – IDT71V321/IDT71V421S — Active: 325mW (typ.) — Standby: 5mW (typ.)

IDT7132

Abstract: IDT7142
Contextual Info: IDT7132SA/LA IDT7142SA/LA HIGH SPEED 2K x 8 DUAL PORT STATIC RAM Features ◆ ◆ ◆ High-speed access – Commercial: 20/25/35/55/100ns max. – Industrial: 25ns (max.) – Military: 25/35/55/100ns (max.) Low-power operation – IDT7132/42SA Active: 325mW (typ.)

Contextual Info: ELPAQ EMS256K8B 35 • SSnS A divisio n o f ELMO Sem iconductor Corp. 2Mb CMOS STATIC SRAM FEATURES High density SRAM module Organized as 262,144 x 8 Access time 35 - 55ns Low power consumption Standby: 100pW typ. Operating: 325mW(typ.) Power supply voltage 5V±10%

DUAL-PORT STATIC RAM

Abstract: IDT7132 IDT7142
Contextual Info: IDT7132SA/LA IDT7142SA/LA HIGH SPEED 2K x 8 DUAL PORT STATIC RAM Features ◆ ◆ ◆ High-speed access – Commercial: 20/25/35/55/100ns max. – Industrial: 25ns (max.) – Military: 25/35/55/100ns (max.) Low-power operation – IDT7132/42SA Active: 325mW (typ.)

Contextual Info: IDT7132SA/LA IDT7142SA/LA HIGH SPEED 2K x 8 DUAL PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 25/35/55/100ns max. – Commercial: 20/25/35/55/100ns (max.) Low-power operation – IDT7132/42SA Active: 325mW (typ.)