S1270 Search Results

Contextual Info: CMOSリニアイメージセンサ S12706 高感度微細画素の受光部を採用 微細画素の受光部を採用した高感度CMOSリニアイメージセンサです。画素サイズ 7 x 7 m、4096画素で長尺の受光面 有効受光長 28.672 mm となっています。

Contextual Info: CMOS linear image sensor S12706 High sensitivity, photosensitive area with minute pixels The S12706 is a high sensitivity CMOS linear image sensor using a photosensitive area with minute pixels. It has a long photosensitive area effective photosensitive length: 28.672 mm consisting of 4096 pixels, each with a pixel size of 7 x 7 m.

Contextual Info: CMOS linear image sensor S12706 High sensitivity, photosensitive area with minute pixels The S12706 is a high sensitivity CMOS linear image sensor using a photosensitive area with minute pixels. It has a long photosensitive area effective photosensitive length: 28.672 mm consisting of 4096 pixels, each with a pixel size of 7 x 7 m.

Contextual Info: S1270Y/AB DALLAS S1270Y/AB 16M Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 5 years m inimum data retention in the absence of external power NC É A20 • Data is autom atically protected during power loss 1 A18 i • Unlim ited write cycles

Contextual Info: S1270Y/AB PRELIMINARY DALLAS SEMICONDUCTOR FEATURES S1270Y/AB 16M Nonvolatile SRAM PIN ASSIGNMENT • 5 years m inimum data retention in the absence of external power NC É A20 • Data is autom atically protected during power loss 1 A18 i • Unlim ited write cycles

ELAP CM 72

Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
Contextual Info: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3

D1650

Abstract: data transistor d1650 d1650 transistor D1760 D1740 d1680 D1720 D1750 d1780 d1640
Contextual Info: DEVICE STATE MACHINES HIPPI BiCMOS PECL CLOCKDEVICE GENERATOR S2020/S2021 SOURCE STATE MACHINES HIPPI APPLICATION NOTE S2020/S2021 SOURCE S2020 HIPPI SOURCE CONNECT CONTROL The S2020 Source Device meets the signalling protocol for the Hippi-Source as determined by ANSI X3.1831991 HiPPI-PH Mechanical Electrical and Signalling

200951A

Abstract: BLOCK DIAGRAM OF ZIGBEE PIN DIAGRAM OF ZIGBEE skyworks solutions ZigBee internal circuit EM250 EM260 S1270 SKY65336 PIN DIAGRAM OF ZIGBEE transceivers
Contextual Info: PRODUCT SUMMARY SKY65336: 2.4 GHz Transmit/Receive Front-End Module with Integrated LNA Applications Description • 2.4 GHz ISM band radios Skyworks SKY65336 is a fully integrated Front-End Module FEM for ZigBee and other 2.4 GHz ISM band applications. The

Contextual Info: D IN = lt'< 7 ^ V$-y ji hOSIDEN b DIN CONNECTORS (Metal Cover Type Sockets) U N IT : mm TCS0200 > U -X /S e rie s TCS0250-01 -1201 TCS1200 > V -X /S e r ie s D IN Sta n d a rd No. 41J24 Num ber o f C o n ta c ts 3 — 4 41524 — 5a 5b WWl Body: 9 4 V -0

744040

Abstract: scx6206 74589 744020 Flip-Flop 7471 744017 744017 counter sn 74373 scx6218 74395
Contextual Info: July 1985 SCX m icroC M O S G ate A rray Fam ily A pplication G uide TABLE OF CONTENTS 1.0 General Description . 2 2.0 Product Features. 2 Enhanced Product Features. . 2

HX8369

Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010

744040

Abstract: 744017 Scx6206 sn 74373 latch 74574 744020 Flip-Flop 7471 74292 74299 universal shift register SCX6218
Contextual Info: July 1985 Jim Semiconductor SCX microCMOS Gate Array Family Application Guide TABLE OF CONTENTS General Description . 2 2.0 Product F eatures. 2.0.1 Enhanced Product Features.

DS1270

Abstract: DS1270AB DS1270AB-70 DS1270Y DS1270Y-70
Contextual Info: S1270Y/AB DALLAS S1270Y/AB 16M Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 5 years m inim um data retention in the absence of external power NC 1 1 36 | A20 1 2 35 | A18 1 3 34 | NC A16 1 4 33 | A15 A14 1 5 32 | A17 A12 1 6 31 1

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

Contextual Info: D S 1270Y/A B DALLAS SEMICONDUCTOR FEATURES PIN A S S I G N M E N T • 5 years m inim um data retention in the absence of external power • Data is autom atically protected during power loss • Unlimited write cycles • L o w -p o w e r CM OS operation

Contextual Info: HIG H-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT ADVANCE INFORMATION IDT 10504 IDT 100504 FEATURES: DESCRIPTION: • 65,536-words x 4-bit organization The IDT10504 and IDT100504 are 262,144-bit high-speed BiCEMOS ECL static random access memories organized as

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published