DS1270 Search Results

16MB SRAM

Abstract: 1024k DS1270W DS1249W DS1265W 36-DIP
Contextual Info: INDUSTRY’S HIGHEST DENSITY 3.3V NONVOLATILE SRAMs Densities up to 16Mb Protect Data for 3.3V Systems The DS1249W, DS1265W, and DS1270W are low-voltage, high-density NV SRAMs designed to preserve critical system data during power loss. Each of these dual in-line encapsulated modules operates on a single 3.3V power supply and employs

Contextual Info: DS1270Y/AB DALLAS DS1270Y/AB 16M Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 5 years m inimum data retention in the absence of external power NC É A20 • Data is autom atically protected during power loss 1 A18 i • Unlim ited write cycles

Contextual Info: DS1270Y/AB PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1270Y/AB 16M Nonvolatile SRAM PIN ASSIGNMENT • 5 years m inimum data retention in the absence of external power NC É A20 • Data is autom atically protected during power loss 1 A18 i • Unlim ited write cycles

DS1270Y-70IND

Abstract: DS1270 DS1270AB DS1270AB-70 DS1270AB-70IND DS1270Y DS1270Y-70
Contextual Info: 19-5615; Rev 11/10 DS1270Y/AB 16M Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 5 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles

DS1270W

Contextual Info: 19-5614; Rev 11/10 DS1270W 3.3V 16Mb Nonvolatile SRAM www.maxim-ic.com FEATURES • •      PIN ASSIGNMENT Five years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles

DS1270W

Contextual Info: DS1270W 3.3V 16Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § PIN ASSIGNMENT Five years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation

cycles

Contextual Info: DS1270Y/AB DALLAS SEMICONDUCTOR FEATURES DS1270Y/AB 16M Nonvolatile SRAM PIN ASSIGNMENT • 5 years minimum data retention in the absence of external power NC I 1 1 A2Û 11 • Data is automatically protected during power loss 2 A 18 11 3 • Unlimited write cycles

DS1270

Abstract: DS1270W DS1270W-100 DS1270W-150
Contextual Info: DS1270W 3.3V 16Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § PIN ASSIGNMENT Five years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation

DS1270W

Contextual Info: DS1270W 3.3V 16Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § PIN ASSIGNMENT Five years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation

Contextual Info: DS1270Y/AB PRELIMINARY DALLAS SEMICONDUCTOR DS1270Y/AB 16M Nonvolatile SRAM FEATURES PIN ASSIG NM ENT • 5 years minimum data retention in the absence of external power Vcc A19 • Data is automatically protected during power loss NC • Unlimited write cycles

DS1270

Abstract: DS1270AB DS1270AB-100 DS1270AB-70 DS1270Y DS1270Y-100 DS1270Y-70
Contextual Info: DS1270Y/AB 16M Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 5 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns

Contextual Info: DS1270Y/AB PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1270Y/AB 16M Nonvolatile SRAM PIN ASSIGNMENT • 5 years minimum data retention in the absence of external power NC I 1 A20 1 • Datais automatically protected during power loss A18 I • Unlimited write cycles

Contextual Info: DS1270Y/AB 16M Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 5 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns

DS1270

Abstract: DS1270AB DS1270AB-70 DS1270Y DS1270Y-70
Contextual Info: DS1270Y/AB DALLAS DS1270Y/AB 16M Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 5 years m inim um data retention in the absence of external power NC 1 1 36 | A20 1 2 35 | A18 1 3 34 | NC A16 1 4 33 | A15 A14 1 5 32 | A17 A12 1 6 31 1

DS1270

Abstract: DS1270AB DS1270AB-100 DS1270AB-70 DS1270Y DS1270Y-100 DS1270Y-70
Contextual Info: DS1270Y/AB 16M Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 5 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation

DS1270

Abstract: DS1270AB DS1270AB-100 DS1270AB-70 DS1270AB-70IND DS1270Y DS1270Y-100 DS1270Y-70
Contextual Info: DS1270Y/AB 16M Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 5 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation

DS1270

Abstract: DS1270AB DS1270Y A6829 DS1270Y-AB
Contextual Info: DS1270Y/AB PRELIMINARY DS1270Y/AB 16M Nonvolatile SRAM FEATURES PIN ASSIGNMENT •5 years minimum data retention in the absence of external power NC 1 36 VCC • Data is automatically protected during power loss A20 2 35 A19 • Unlimited write cycles A18

DS1270W

Abstract: DS1270 DS1270W-100 DS1270W-100IND E99151 DS12
Contextual Info: 19-5614; Rev 11/10 DS1270W 3.3V 16Mb Nonvolatile SRAM www.maxim-ic.com FEATURES • •      PIN ASSIGNMENT Five years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles

DS1270W

Abstract: DS1270 DS1270W-100 DS1270W-100IND DS1270W-150 DS9034PC DS9034PCI ds1270w-100#
Contextual Info: DS1270W 3.3V 16Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § PIN ASSIGNMENT Five years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation

DS1270

Abstract: DS1270AB DS1270Y
Contextual Info: DS1270Y/AB DS1270Y/AB 16M Nonvolatile SRAM FEATURES PIN ASSIGNMENT •5 years minimum data retention in the absence of external power NC 1 36 VCC • Data is automatically protected during power loss A20 2 35 A19 • Unlimited write cycles A18 3 34 NC A16

ST L1117

Abstract: ST MICROELECTRONICS L1117 33 LM7905 TO-92 ENE CP2211 CP2211 TL496 equivalent cp2206 MC34153 L7805 SOT 89 transistor L7905
Contextual Info: Technology for Innovators TM Standard Linear Products Cross-Reference Including Amplifiers, Comparators, Timers, Peripheral Drivers, Power Management Controllers, References, Regulators, Supervisors, Shunts, Transmitters and Receivers INTERFACE COMPARATORS

DS1270W

Abstract: DS2070W-100 DS2070W
Contextual Info: Rev 0; 8/06 3.3V Single-Piece 16Mb Nonvolatile SRAM Features The DS2070W is a 16Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in

F5 sot223

Abstract: DS18S20Z DS1270Y-70IND TSOC 6 socket ds1480 DS1321 DS1667S-010 DS2404S-001 DS2404S001 dallas ds1213c
Contextual Info: DS1233A 3.3V EconoReset www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT Automatically restarts microprocessor after power failure Monitors pushbutton for external override Internal circuitry debounces pushbutton switch Maintains reset for 350ms after VCC returns to

DS1425L-F5

Abstract: F5 sot223 TSOC 6 socket DS-1100 DS1267SN-100 DS1314DS DS275 8-Pin SOIC 150-mil DS1667S-010 DS1640 DS1238S5
Contextual Info: DS1233 5V EconoReset www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT Automatically restarts microprocessor after power failure Monitors pushbutton for external override Internal circuitry debounces pushbutton switch Maintains reset for 350ms after VCC returns to