IDT10504 Search Results
IDT10504 Datasheets (10)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IDT10504S10C | Integrated Device Technology | SRAM GP Single Port | Original | 85.18KB | 7 | ||
| IDT10504S10Y | Integrated Device Technology | SRAM GP Single Port | Original | 85.18KB | 7 | ||
| IDT10504S12C | Integrated Device Technology | SRAM GP Single Port | Original | 85.18KB | 7 | ||
| IDT10504S12Y | Integrated Device Technology | SRAM GP Single Port | Original | 85.18KB | 7 | ||
| IDT10504S15C | Integrated Device Technology | SRAM GP Single Port | Original | 85.18KB | 7 | ||
| IDT10504S15Y | Integrated Device Technology | SRAM GP Single Port | Original | 85.18KB | 7 | ||
| IDT10504S7C | Integrated Device Technology | SRAM GP Single Port | Original | 85.18KB | 7 | ||
| IDT10504S7Y | Integrated Device Technology | SRAM GP Single Port | Original | 85.18KB | 7 | ||
| IDT10504S8C | Integrated Device Technology | SRAM GP Single Port | Original | 85.18KB | 7 | ||
| IDT10504S8Y | Integrated Device Technology | SRAM GP Single Port | Original | 85.18KB | 7 |
IDT10504 Price and Stock
Integrated Device Technology Inc IDT10504S12YSTANDARD SRAM, 64KX4, 12NS, CMOS, PDSO32 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IDT10504S12Y | 35 |
|
Buy Now | |||||||
Integrated Device Technology Inc IDT10504S8CSTANDARD SRAM, 64KX4, 8NS, CMOS, CDIP32 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IDT10504S8C | 35 |
|
Buy Now | |||||||
IDT10504 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
se 130 nContextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT SRAM IDT10504 IDT100504 IDT101504 Integrated Device Technology, Inc. FEATURES: • • • • • • • • 65,536-words x 4-bit organization Address access time: 7/8/10/12/15 ns Low power dissipation: 1000m W (typ.) |
OCR Scan |
idt10504idt100504idt101504536-words+4 | |
6116 static RAM chip
Abstract: IDT100504
|
Original |
idt10504idt100504idt101504ecl-10k+3 | |
|
Contextual Info: Integrate d Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT SRAM IDT10504 IDT100504 IDT101504 FEATURES: DESCRIPTION: • • • • • • • The IDT10504, IDT100504 and IDT101504 are 262,144bit high-speed BiCEMOS ECL static random access |
OCR Scan |
idt10504idt100504idt101504144bit+1 | |
TAA 2762Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT SRAM IDT10504 IDT100504 IDT101504 FEATURES: DESCRIPTION: • • • • • • • The IDT10504, IDT100504 and IDT101504 are 262,144bit high-speed BiCEMOS ECL static random access |
OCR Scan |
idt10504idt100504idt101504536-words+4 | |
ecl100
Abstract: 432Z
|
OCR Scan |
idt10504idt100504idt101504536-words+7 | |
|
Contextual Info: HIG H-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT ADVANCE INFORMATION IDT 10504 IDT 100504 FEATURES: DESCRIPTION: • 65,536-words x 4-bit organization The IDT10504 and IDT100504 are 262,144-bit high-speed BiCEMOS ECL static random access memories organized as |
OCR Scan |
536-words12/15ns600mwmil-std-883+6 | |
sa3cContextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT WITH CONDITIONAL WRITE ADVANCE INFORMATION IDT 10508 IDT 100508 FEATURES: DESCRIPTION: • 65,535-words x 4-bit organization The IDT10508 and IDT100508 are 262,144-bit high-speed B iC E M O S E C L static random acce ss memories organized as |
OCR Scan |
535-words12/15ns800mwidt10508+6 | |
IHb siContextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT with SYNCHRONOUS WRITE FEATURES: • • • • • • 65,535-words x 4-bit organization Address access time: 12/15 ns Read Data output latch for extended hold time Short Write Cycle input data and address valid time |
OCR Scan |
535-wordsidt10507idt100507idt101507+3 | |
|
Contextual Info: fcitegrated Oevlc« Tethnologr, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT with SYNCHRONOUS WRITE FEATURES: • 65,535-words x 4-bit organization • Address access time: 12/15 ns • Read Data output latch for extended hold time • Short Write Cycle input data and address valid time |
OCR Scan |
idt10507idt100507idt101507535-words+2 | |
|
Contextual Info: ADVANCE INFORMATION IDT10508 IDT100508 IDT101508 HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT with CONDITIONAL WRITE FEATURES: • • • • • • • 65,535-words x 4-bit organization Address aocess time: 12/15 ns Read Data output latch for extended hold time |
OCR Scan |
535-words64kx4idt10508idt100508+2 | |
|
Contextual Info: I r t q m r i Devtc« Technology, h e . FEATURES: • • • • • • • ADVANCE INFORMATION IDT10508 IDT100508 IDT101508 HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT with CONDITIONAL WRITE 65,535-words x 4-bit organization Address access time: 12/15 ns |
OCR Scan |
idt10508idt100508idt101508535-words+3 | |
|
Contextual Info: ADVANCE HIGH-SPEED BiCMOS INFORMATION ECL STATIC RAM IDT 10507 256K 64K x 4-BIT IDT 100507 WITH SYNCHRONOUS WRITE FEATURES: DESCRIPTION: • 65,535-words x 4-bit organization • Address access time: 12/15 ns (max.) • Low power dissipation: 800mW (typ.) |
OCR Scan |
535-words800mwidt10507idt100507+6 |