IDT105 Search Results

Contextual Info: HIGH-SPEED BiCMOS ECL SELF-TIMED STATIC RAM 256K 64K x 4-BIT ADVANCE INFORMATION IDT 10506RL IDT 100506RL FEATURES: DESCRIPTION: • 65,536-words x 4-bit organization The IDT10506RL and IDT100506 are 262,144-bit high-speed BiCEMOS ECL static random access memory organized as

ecl100

Contextual Info: SELF-TIMED BiCMOS ECL STATIC RAM 256K 64K X 4-BIT STRAM IDT10506RL IDT100506RL IDT101506RL Technology, Inc. FEATURES: • 65,536-words x 4-bit organization • Self-Timed Write, with registers on inputs and latches on outputs • Balanced Read/Write cycle time: 12/i5ns

sa3c

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT WITH CONDITIONAL WRITE ADVANCE INFORMATION IDT 10508 IDT 100508 FEATURES: DESCRIPTION: • 65,535-words x 4-bit organization The IDT10508 and IDT100508 are 262,144-bit high-speed B iC E M O S E C L static random acce ss memories organized as

se 130 n

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT SRAM IDT10504 IDT100504 IDT101504 Integrated Device Technology, Inc. FEATURES: • • • • • • • • 65,536-words x 4-bit organization Address access time: 7/8/10/12/15 ns Low power dissipation: 1000m W (typ.)

Contextual Info:  HIGH-SPEED BiCMOS ECL STATIC RAM 1M 256K x 4-BIT SRAM Integrated Device Technology, Inc. PRELIMINARY IDT10514 IDT100514 IDT101514 These devices are part of a family of asynchronous fourbit-wide ECL SRAMs. The devices have been configured to follow the standard ECL SRAM JEDEC pinout. Because they

6116 static RAM chip

Abstract: IDT100504
Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT SRAM IDT10504 IDT100504 IDT101504 Integrated Device Technology, Inc. These devices are part of a family of asynchronous fourbit-wide ECL SRAMs. The devices have been configured to follow the standard ECL SRAM JEDEC pinout. Because they

Contextual Info: Integrate d Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT SRAM IDT10504 IDT100504 IDT101504 FEATURES: DESCRIPTION: • • • • • • • The IDT10504, IDT100504 and IDT101504 are 262,144bit high-speed BiCEMOS ECL static random access

Contextual Info: Integrated Device Technology, Inc. FEATURES: • • • • • • • • ADVANCE INFORMATION IDT10596RR IDT100596RR IDT101596RR SELF-TIMED BiCMOS ECL STATIC RAM 256K 32K x 9-BIT SRAM 32,768-words x 9-bit organization Self-Timed Write, with registers on inputs and outputs

256Kx4 SRAM

Abstract: 256KX4 ECL-10K
Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 1M 256K x 4-BIT SRAM PRELIMINARY IDT10514 IDT100514 IDT101514 FEATURES: DESCRIPTION: • • • ■ • ■ • The IDT10514, IDT100514and IDT101514are 1,048,576bit high-speed BiCEMOS ECL static random access memo­

TAA 2762

Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT SRAM IDT10504 IDT100504 IDT101504 FEATURES: DESCRIPTION: • • • • • • • The IDT10504, IDT100504 and IDT101504 are 262,144bit high-speed BiCEMOS ECL static random access

DT10514

Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 1M 256Kx 4-BIT SRAM PRELIMINARY IDT10514 IDT100514 IDT101514 FEATURES: DESCRIPTION: • • • • • • • The IDT10 5 1 4 ,1DT100514 and IDT101514 are 1,048,576bit high-speed BiCEMOS ECL static random access memo­

Contextual Info: PRELIMINARY IDT10506LL IDT100506LL IDT101506LL SELF-TIMED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT STRAM FEATURES: • 65,536-words x 4-bit organization • Self-Timed Write, with latches on inputs and latches on outputs • Balanced Read/Write cycle time: 15/18ns

Contextual Info: ADVANCE INFORMATION IDT10508 IDT100508 IDT101508 HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT with CONDITIONAL WRITE FEATURES: • • • • • • • 65,535-words x 4-bit organization Address aocess time: 12/15 ns Read Data output latch for extended hold time

ecl100

Abstract: 432Z
Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT SRAM IDT10504 IDT100504 IDT101504 Integrated Device Technology, Inc. FEATURES: • • • • • • • • 65,536-words x 4-bit organization Address access time: 7/8/10/12/15 ns Low power dissipation: 1000m W (typ.)

Contextual Info: PRELIMINARY IDT10506LL IDT100506LL IDT101506LL SELF-TIMED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT STRAM Integ rated D evice Technology, in c. FEATURES: • 65,536-words x 4-bit organization • Self-Timed Write, with latches on inputs and latches on outputs

Contextual Info: I r t q m r i Devtc« Technology, h e . FEATURES: • • • • • • • ADVANCE INFORMATION IDT10508 IDT100508 IDT101508 HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT with CONDITIONAL WRITE 65,535-words x 4-bit organization Address access time: 12/15 ns

Contextual Info: HIG H-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT ADVANCE INFORMATION IDT 10504 IDT 100504 FEATURES: DESCRIPTION: • 65,536-words x 4-bit organization The IDT10504 and IDT100504 are 262,144-bit high-speed BiCEMOS ECL static random access memories organized as

S1272

Abstract: s1273 D2221 A7AE
Contextual Info: HIGH-SPEED BiCMOS ECL SELF-TIMED STATIC RAM 256K 64K x 4-BIT ADVANCE INFORMATION IDT 10506LL IDT 100506LL FEATURES: DESCRIPTION: • 65,536-words x 4-bit organization The IDT10506LL and IDT100506LL are 262,144-bit high-speed BICEMOS ECL static random access memory organized as

ss101 dc

Abstract: 10159 MXM pinout ECL-10K
Contextual Info: Integrated Device Technology, Inc. FEATURES: • • • • • • • • ADVANCE INFORMATION IDT10596RR IDT100596RR IDT101596RR SELF-TIMED BiCMOS ECL STATIC RAM 256K 32K x 9-BIT SRAM 32,768-words x 9-bit organization Self-Timed Write, with registers on inputs and outputs

QSC11

Abstract: trier
Contextual Info: IDT10506RL IDT100506RL 1DT101506RL SELF-TIMED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT STRAM FEATURES: • 65,536-words x 4-bit organization • Self-Timed W rite, w ith registers on inputs and latches on outputs • Balanced Read/W rite cycle tim e: 12/15ns

MA 2810

Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 256K 32K x 9-BIT SRAM FEATURES: • • • • • • • • 32,768-words x 9-bit organization Address access time: 8/10/12/15 Wide word for reduced address loading Guaranteed Output Hold time

IHb si

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT with SYNCHRONOUS WRITE FEATURES: • • • • • • 65,535-words x 4-bit organization Address access time: 12/15 ns Read Data output latch for extended hold time Short Write Cycle input data and address valid time

Contextual Info: fcitegrated Oevlc« Tethnologr, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT with SYNCHRONOUS WRITE FEATURES: • 65,535-words x 4-bit organization • Address access time: 12/15 ns • Read Data output latch for extended hold time • Short Write Cycle input data and address valid time

U3 SSOP-8

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 256K 32K x 9-BIT SRAM FEATURES: • • • • • • • • 32,768-words x 9-bit organization Address access time: 8/10/12/15 Wide word for reduced address loading Guaranteed Output Hold time Differential Write Clock and Single-Ended Write Enable