IDT10 Search Results

100A484

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4K x 4-BIT SRAM PRELIMINARY IDT10A484 IDT100A484 IDT101A484 FEATURES: DESCRIPTION: • • • • • • • • The IDT10A484, IDT1OOA484 and IDT101A484 are 16,384bit high-speed BiCEMOS ECL static random access

conventional bicmos

Contextual Info: 3ÔE D B 4Ô2S771 QQOÔ'iSa 3 Ö I D T _ - P - % - 2 3 - 6 3 INTEGRATED DEVICE HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10A474 IDT100A474 IDT101A474 FEATURES: DESCRIPTION: • 1024-words x 4-bit organization

101490

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 64K x 1-BIT SRAM IDT10490 IDT100490 IDT101490 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT10490, IDT100490 and IDT101490 are 65,536-bit high-speed BiCEMOS ECL static random access memo­

Contextual Info: integ rated Device Technology, Inc. PRELIMINARY IDT10496LL IDT100496LL IDT101496LL SELF-TIMED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT STRAM FEATURES: • 16,384-words x 4-bit organization • Self-Timed Write, with latches on inputs and latches on outputs

100A484

Abstract: 101A48 IDT10484 ECL-10K IDT100A4M 4Kx4 SRAM
Contextual Info: r — I N T E G R A T E D DE VICE 3ÔE D • 4 Ô 2 S771 D Ü 0 b071 4 DÉ IDT 3 > '0 < Z HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4K x 4-BIT SRAM PRELIMINARY IDT10A484 IDT100A434 IDT101A484 FEATURES; DESCRIPTION: • • ■ • • • • • The IDT10A484,1DT100A484 and IDT101A484 are 16,384bit high-speed BiCEMOS ECL static random access

Contextual Info: Integrated Device Technology» Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16Kx 4-BIT SRAM iotÎÎSÎm IDT101494 FEATURES: DESCRIPTION: • • • • • • • The IDT10494, IDT100494 and 101494 are 65,536-bit high-speed BiCEMOS ECL static random access memo­

8002 1035

Abstract: IHb si DSC-8002 2764-2 27b4 ECL-10K IDT100494 IDT101494 IDT10494 ecl 10K sram 16 bit
Contextual Info: Data Book B, Section 5.4, Page 1 IDT10/100/101494 In te g ra te d D evice T echnology, In c. HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT SRAM IDT10494 IDT100494 IDT101494 FEATURES: DESCRIPTION: • • • • • • • The IDT10494, IDT100494 and 101494 are 65,536-bit

l00a

Abstract: ECL-10K
Contextual Info: In tegrated D e v ice T ech n o lo gy, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10A474 IDT100A474 IDT101A474 FEATURES: DESCRIPTION: • • • • • • • • The ID T 10A 474, ID T 1 0 0 A 4 7 4 and 1 0 1A 474 are 4,096-bit

Contextual Info: HIGH-SPEED BiCMOS ECL SELF-TIMED STATIC RAM 256K 64K x 4-BIT ADVANCE INFORMATION IDT 10506RL IDT 100506RL FEATURES: DESCRIPTION: • 65,536-words x 4-bit organization The IDT10506RL and IDT100506 are 262,144-bit high-speed BiCEMOS ECL static random access memory organized as

Contextual Info: Integrated Device Technology, inc. HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10474 IDT100474 IDT101474 FEATURES: DESCRIPTION: • • • • • • • • The IDT10474, IDT100474 and 101474 are 4,096-bit high­ speed BiCEMOS ECL static random access memories

Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10A474 IDT100A474 IDT101A474 FEATURES: DESCRIPTION: • 1024-words x 4-bit organization • Address access time: 5/7/8/10/15 ns • Low power dissipation: 600mW (typ.)

DSC40

Contextual Info: I N T E G R A T E » D E VI CE 3ÛE D • M Ö 2 S 77 1 D D O b G b E _ HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4K x 4-BIT SRAM 3 Bi IDT ~t - 4 G ~ £ 2 , - 0 3 PRELIMINARY IDT10484 IDT100484 IDT101484 FEATURES: DESCRIPTION: • • • ■ ■

Contextual Info: Data Book B, Section 5.4, Page 1 IDT10/100/101494 Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16Kx 4-BIT SRAM IDT10494 IDT100494 IDT101494 FEATURES: DESCRIPTION: • • • • • • • The IDT10494, IDT100494 and 101494 are 65,536-bit

ecl100

Contextual Info: SELF-TIMED BiCMOS ECL STATIC RAM 256K 64K X 4-BIT STRAM IDT10506RL IDT100506RL IDT101506RL Technology, Inc. FEATURES: • 65,536-words x 4-bit organization • Self-Timed Write, with registers on inputs and latches on outputs • Balanced Read/Write cycle time: 12/i5ns

101490

Abstract: datasheet for 64K RAM ECL-10K SO24-4 1 bit sram DSC8001
Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 64K x 1-BIT SRAM Integrated Device Technology, Inc. IDT10490 IDT100490 IDT101490 FEATURES: DESCRIPTION: • • • • • • • • The IDT10490, IDT100490 and IDT101490 are 65,536-bit high-speed BiCMOS ECL static random access memories

D10S60C

Abstract: IDT10S60C JESD22
Contextual Info: IDT10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior

Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 16K 16Kx 1-BIT SRAM IDT10480 IDT100480 IDT101480 FEATURES: DESCRIPTION: • • • • • • • The IDT10480, IDT100480 and IDT101480 are 16,384-bit high-speed BiCEMOS ECL static random access memo­

sa3c

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT WITH CONDITIONAL WRITE ADVANCE INFORMATION IDT 10508 IDT 100508 FEATURES: DESCRIPTION: • 65,535-words x 4-bit organization The IDT10508 and IDT100508 are 262,144-bit high-speed B iC E M O S E C L static random acce ss memories organized as

ecl 10K sram 16 bit

Contextual Info: HIG H-SPEED BiCMOS ECL STATIC RAM 64K 1 6 K x 4-BIT W ITH CO NDITIO NAL W RITE ADVANCE INFORMATION IDT 10498 IDT 100498 FEATURES: DESCRIPTION: • The IDT10498 a n d IDT100498 are 6 5,536-bit high-speed B iC E M O S ECL sta tic ra nd o m a c c e s s m e m orie s organized as

se 130 n

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT SRAM IDT10504 IDT100504 IDT101504 Integrated Device Technology, Inc. FEATURES: • • • • • • • • 65,536-words x 4-bit organization Address access time: 7/8/10/12/15 ns Low power dissipation: 1000m W (typ.)

101490

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 64K x 1-BIT SRAM IDT10490 IDT100490 IDT101490 Integrateti D evice Technology, In c. FEATURES: • • • • • • • 65,536-words x 1 -bit organization Address access tim e: 8/10/12/15 Low power dissipation: 420m W (typ.)

d10s60c

Contextual Info: IDT10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior

Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10474 IDT100474 IDT101474 FEATURES: DESCRIPTION: • • • • • • • • T h e ID T 1 047 4, ID T 10 0 4 7 4 and 1 0 1 4 7 4 are 4,096-bit high­

Contextual Info: ADVANCE INFORMATION IDT10498 IDT100498 IDT101498 HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT with CONDITIONAL WRITE FEATURES: • • • • • ■ ■ 16,384-words x 4 -b il organization Address access time: 12/15ns Read Data output latch lor extended hold time