S1272 Search Results

PH41

Abstract: PH-11 PC2100AGF upc2100agf vm22a PH21 PH31 C10535E ph11
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16808 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16808 is a monolithic dual H bridge driver circuit which employing N-channel power MOS FETs for its driver stage. By using the power MOS FETs for the output stage, saturation voltage and power consumption are substantially

d16808

Abstract: uPC2100
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT _ »PD16808 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT D E S C R IP T IO N The /¿PD16808 is a m onolithic dual H bridge driver circuit which em ploying N-channel pow er MOS FETs for its driver stage. By using the power MOS FETs for the output stage, saturation voltage and pow er consum ption are substantially

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

HX8369

Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010

PH41

Abstract: uPC2100 C10535E PH21 PH31 PC2100AGF uPC2100AGF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT _ f i P D 1 6 8 8 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The ¿¡PD16808 is a monolithic dual H bridge driver circuit which employing N-channel power MOS FETs for its driver stage. By using the power MOS FETs for the output stage, saturation voltage and power consumption are substantially

UPD16823GS

Abstract: C10535E MEI-1202 apw200 ldmos nec
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16823 MONOLITHIC H BRIDGE DRIVER DESCRIPTION This IC is a monolithic H bridge driver employing a horizontal N-channel power MOS FET for its driver stage. It is provided with forward/reverse and brake functions and is ideal as a driver circuit for a motor that winds or

C10535E

Abstract: MEI-1202
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

TEP-512

Abstract: C4110 C10535J
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD16823 MONOLITHIC H BRIDGE DRIVER DESCRIPTION This IC is a m onolithic H bridge driver em ploying a horizontal N-channel pow er MOS FET for its driver stage. It is provided with forw ard/reverse and brake functions and is ideal as a driver circuit for a motor that w inds or

D1387

Abstract: C4110 PD16823 C10535J
Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit µ PD16823 モノリシック H ブリッジ・ドライバ µ PD16823 は，ドライバ段に横形 N チャネル・パワーMOS FET を採用したモノリシック H ブリッジ・ドライバ IC

S124

Contextual Info: m MS S E R I E S POWER INDUCTOR • F E ATUR E S % fe;^ High s a tu r a t i o n curren t S u i t a b l e for r e fl ow soldering. Wi th m a g n e t i c a l l y s h ie l d e d « s i * • SMT type APPLICATION LCD fell DC /D C 4#H # OA e q u i p m e n t Note book Co mp ut e r

S1272

Abstract: s1273 D2221 A7AE
Contextual Info: HIGH-SPEED BiCMOS ECL SELF-TIMED STATIC RAM 256K 64K x 4-BIT ADVANCE INFORMATION IDT 10506LL IDT 100506LL FEATURES: DESCRIPTION: • 65,536-words x 4-bit organization The IDT10506LL and IDT100506LL are 262,144-bit high-speed BICEMOS ECL static random access memory organized as

pd16808

Abstract: vm22a C10535J VP15-00-3 RH2F
Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit µ PD16808 モノリシック・デュアル H ブリッジ・ドライバ回路 µ PD16808 は，ドライバ段に N チャネル MOS FET を採用したモノリシック・デュアル H ブリッジ・ドライバ回