PH31 Search Results

b 595 transistor

Abstract: Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE
Contextual Info: =s = =-= ‘, = * an AMP .- -=r= FF company Radar Pulsed Power Transistor, 5W, loops Pulse, 10% Duty PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

PH3120L

Abstract: 10S100
Contextual Info: PH3120L N-channel TrenchMOS logic level FET Rev. 03 — 30 March 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

13MM

Abstract: PH3134-2OL transistor f20 PH3134
Contextual Info: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

transistor c36

Abstract: wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134
Contextual Info: =5= ,-= E -= EF an AMP company * ,- .-z = Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty PH3134-11s 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

transistor 1005 oj

Abstract: transistor power rating 5w ATC100A PH3135-5S PIN07
Contextual Info: M tiK O V . J r an A M P com pany Radar Pulsed Power Transistor, 5W, 2^s Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V2.00 . .900 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry

Contextual Info: English Deutsch Français AN-PH31EZ Español Standard zoom lens for projector Standard-zoomobjektiv für Projektor Objectif zoom standard pour projecteur Objetivo zoom estándar para proyector プロジェクター用標準ズームレンズ OPERATION MANUAL

Contextual Info: PH3134-30S Radar Pulsed Power Transistor 30W, 3.1-3.4 GHz, 1µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

317 T

Abstract: PH31-0 PH310
Contextual Info: PLASTIC MOLDED PIN PHOTODIODE PH310 FEATURES DESCRIPTION • ULTRA HIGH SPEED RESPONSE tr, tf '=¡30 ns • COINCIDENCE OF THE WAVELENGTH OF MAXIMUM SENSITIVITY WITH THAT OF AN INFRARED LED: * smax = 990 nm The PH310 is a photodiode with PIN structure. It has a wide

Contextual Info: PH3134-25M Radar Pulsed Power Transistor 25W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

Contextual Info: PH3134-20L Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)63â V(BR)CBO (V) I(C) Max. (A)2.4 Absolute Max. Power Diss. (W)146# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.5x @V(CBO) (V) (Test Condition)40

2052-5636-02

Contextual Info: m an A M P com pany Radar Pulsed Power Transistor, 20W, 100^is Pulse, 10% Duty 3 .1 -3 .5 GHz PH3135-20M Features • NI’ N S ilic o n M ic r o w a v e P o w e r T r a n s is t o r • C o m m o n B a s e C o n fig u r a t io n • B r o a d b a n d C la ss C O p e r a t io n

Contextual Info: M an A M P com pany Radar Pulsed Power Transistor, 30W, 100|is Pulse, 10% Duty 3.1-3.5 GHz PH3135-30M V2.00 Features • • • • • • • • NPN Silicon M icrow ave Pow er T ran sisto r C om m on Base C on fig u ratio n B ro a d b an d Class C O p e ratio n

RF NPN POWER TRANSISTOR 3 GHZ 5w

Contextual Info: Æ an A M P com t pan y Radar Pulsed Power Transistor, 5W, 2|is Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V 2 .0 0 Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

transistor j117

Abstract: PH3135-30M
Contextual Info: PH3135-30M Radar Pulsed Power Transistor 30W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 10 Aug 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

PH3135-5S

Contextual Info: PH3135-5S Radar Pulsed Power Transistor 5W, 3.1-3.5 GHz, 2µs Pulse, 10% Duty M/A-COM Products Released, 10 Aug 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

PH3135-25S

Contextual Info: PH3135-25S Radar Pulsed Power Transistor 25W, 3.1-3.5 GHz, 2µs Pulse, 10% Duty M/A-COM Products Released, 10 Aug 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

PH3135-65M

Abstract: RF NPN POWER TRANSISTOR 3 GHZ
Contextual Info: PH3135-65M Radar Pulsed Power Transistor 65W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 10 Aug 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

Mallory Capacitor

Contextual Info: -= -=z an AMP company = Radar Pulsed Power Transistor, 3OW, lps Pulse, 10% Duty PH3134-30s 3.1 - 3.4 GHz v2.00 Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

NPN TRANSISTOR Z4

Abstract: b 595 transistor transistor z4 n transistor ZY PH3134-65M 572i transistor b 595
Contextual Info: ,-=r=-= -= ZY f .- = r = anAMPcompany * Radar Pulsed Power Transistor, 65W, 1OOp Pulse, 10% Duty PH3134-65M 3.1 - 3.4 GHz Features l l l l l l l l .650 16.51 - NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation

Contextual Info: PH3134-30S Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)63â V(BR)CBO (V) I(C) Max. (A)3.6 Absolute Max. Power Diss. (W)350# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.5mx @V(CBO) (V) (Test Condition)40

Contextual Info: PH3134-25M Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)63â V(BR)CBO (V) I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)159# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.5mx @V(CBO) (V) (Test Condition)40

transistor 9232

Contextual Info: A ti« O M w a n A M P com pany Radar Pulsed Power Transistor, 10W, 100ns Pulse, 10% Duty 3.1-3.4 GHZ PH3134-10M Features • • • • • • • • b/y :14 4B> NPN Silicon M icrow ave Pow er T ran sisto r C o m m o n Base C onfig u ratio n B ro a d b an d Class C O p e ra tio n

Contextual Info: Radar Pulsed Power Transistor, 65W, 100|is Puise, 10% Duty 3.1-3.4 GHz PH3134-65M Features • • • • • • • • N1JN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C onfig u ratio n B ro a d b an d Class C O p e ratio n High Efficiency In terd ig ita te d G eo m etry

Contextual Info: w an A M P com pany Radar Pulsed Power Transistor, 5W, 2 j.s Pulse, 10% Duty 3 .1 -3 .5 GHz PH3135-5S 7JJ Features H i, • N P N S ilic o n M ic r o w a v e P o w e r T r a n s is to r • C o m m o n Base C o n fig u r a tio n • B ro a d b a n d C lass C O p e r a t io n