S1229 Search Results

Contextual Info: SQD100N04-3m6 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0036 ID (A) • 100 % Rg and UIS Tested

Contextual Info: SPICE Device Model SiRA02DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si7625DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si7439DP www.vishay.com Vishay Siliconix P-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si7613DN www.vishay.com Vishay Siliconix SPICE Device Model Si7613DN DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiR172ADP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si7465DP www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si7415DN www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si7463ADP www.vishay.com Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

DS1868

Abstract: LM 4440 AUDIO AMPLIFIER CIRCUIT DS1230y-200 battery date codes circuit diagram laptop motherboard Scans-049 texas instrument catalog 74ls DS1666-50 st c031 s1040 diode
Contextual Info: S ystem E x t e n s i o n Data Book CPU Supervisors Digital Potentiometers Silicon Timed Circuits Thermal Products DALLAS SEMICONDUCTOR Copyright 1994 Dallas Semiconductor Corporation, Dallas, Texas All Rights Reserved. Circuit diagrams are included to illustrate typical semiconductor applications. Complete information sufficient for

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16Kx 4-BIT PRELIMINARY IDT 100494 FEATURES: DESCRIPTION: • 16,384-w ords x 4 -b it o rg a n iza tio n • A ddress a ccess tim e : 8 /1 0 /1 5n s (max.) • Low p o w e r d issip a tio n : 500m W (typ.) T h e ID T100494 is a 65,536-bit h ig h -sp ee d BiC E M O S ECL

Contextual Info: SQD100N04-3m6L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0036 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • Package with Low Thermal Resistance

Contextual Info: îm Dallas Sem iconductor + 5 V P o w e re d T rip le R S -2 3 2 T ra n s m itte r/R e c e i 1te r FEATURES • Operates from a single 5V power supply • 3 drivers and 3 receivers • Meets all EIA RS-232-C specifications • On-board voltage doubler D S 1 2 2 9 —2 0 -P in D IP

Contextual Info: SPICE Device Model Si8808DB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si7461DP www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si7431DP www.vishay.com Vishay Siliconix P-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiS472ADN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si7635DP www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiR642DP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si7430DP www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

crimper CT 3508

Abstract: 490-040 1555.N0375.08 g2206 THERMAL Fuse m20 tf 115 c MC3050
Contextual Info: American Electrical, Inc. Full Line Catalog COMPANY HISTORY American Electrical, Inc. was founded in 1997 by Thomas McCormick, former Vice President of Sales for Weidmuller, Inc. The Company concept was born over lunch with fellow associates literally on a napkin.

HX8369

Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010

Contextual Info: S1229 S1229 DALLAS SEMICONDUCTOR +5V Powered Triple R S -2 3 2 T ran sm itter/R eceiver FEATURES PIN ASSIGNMENT KJ • Operates from a single 5V power supply c [ w [ • 3 drivers and 3 receivers • Meets all EIA RS.232.C specifications 19 H GND C 1 -[

s2513

Abstract: MSM 7225 S1709 E146370 S1113 s1716 SLR-16 s2311 sm 314 1040 D1 S2438
Contextual Info: Patent #: P-2631996 Patented Security: International Approvals: UL # E146370 CSA # LR50370-10 VDE # 57986 SEV # 100989 Protection: Material: Rated Temperature: Seal: Resistant to: Up to 70 PSI Polyamide - flame retardant, self-extinguishing nylon with neoprene bushing