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SIRA02DP Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIRA02DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 50A SO-8	Original	PDF		9

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Vishay Intertechnologies SIRA02DP-T1-GE3 Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	SIRA02DP-T1-GE3		3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.53	Buy Now
Avnet Americas	SIRA02DP-T1-GE3	Tape & Reel		52 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.74	Buy Now
Arrow Electronics ()	SIRA02DP-T1-GE3		3,000	52 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.53	Buy Now
	SIRA02DP-T1-GE3	Cut Strips	4	52 Weeks	1	1 $0.78 10 $0.78 100 $0.78 1000 $0.78 10000 $0.78	Buy Now
Newark ()	SIRA02DP-T1-GE3	Bulk			1	1 $2.04 10 $1.78 100 $1.49 1000 $1.28 10000 $1.07	Buy Now
	SIRA02DP-T1-GE3	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $1.06	Buy Now
TTI	SIRA02DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.75	Buy Now

Bristol Electronics	SIRA02DP-T1-GE3		4,002		1	1 $1.80 10 $1.35 100 $1.12 1000 $0.59 10000 $0.59	Buy Now
Quest Components ()	SIRA02DP-T1-GE3		3,201			1 $2.28 10 $2.28 100 $2.28 1000 $0.94 10000 $0.85	Buy Now
	SIRA02DP-T1-GE3		3,201			1 $2.40 10 $2.40 100 $2.40 1000 $0.75 10000 $0.66	Buy Now
TME	SIRA02DP-T1-GE3				1	1 $2.59 10 $1.74 100 $1.12 1000 $1.02 10000 $1.02	Get Quote
EBV Elektronik	SIRA02DP-T1-GE3			53 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SIRA02DP-T1-GE3 SEMICONCUCTOR, MOSFET;TRENCHFET;N-CHANNEL;30V;50A;2MOHM @ 10V;POWERPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SIRA02DP-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $2.37	Get Quote

SIRA02DP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00200 at VGS = 10 V 50 0.00270 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	sira02dp sira02dp-t1-ge3 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SPICE Device Model SiRA02DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sira02dp 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00200 at VGS = 10 V 50 0.00270 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	sira02dp sira02dp-t1-ge3 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0020 at VGS = 10 V 50 0.0027 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	sira02dp 2002/95/ec sira02dp-t1-ge3 2011/65/eu +112-mar-12	PDF
Contextual Info: SiRA02DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	sira02dp an609 1877m 0935u +61831m 4292u 2011m 5941m 6543m 13-jan-12	PDF
sira Contextual Info: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0020 at VGS = 10 V 50 0.0027 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	sira02dp 2002/95/ec sira02dp-t1-ge3 2011/65/eu +212-mar-12 sira	PDF
Contextual Info: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0020 at VGS = 10 V 50 0.0027 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	sira02dp 2002/95/ec sira02dp-t1-ge3 2011/65/eu +112-mar-12	PDF
Contextual Info: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0020 at VGS = 10 V 50 0.0027 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	sira02dp 2002/95/ec sira02dp-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0020 at VGS = 10 V 50 0.0027 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	sira02dp 2002/95/ec sira02dp-t1-ge3 11-mar-11	PDF
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:	Original	siz916dt siz340dt siz914dt vmn-pt0306-1402	PDF
Contextual Info: Vishay Intertechnology, Inc. Telecommunications Telecommunications Infrastructure One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Telecommunications Telecommunications Infrastructure Transmitters, Base Stations	Original	aec-q101 vmn-ms6761-1212	PDF
PowerPAK 1212-8 Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip Contextual Info: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications	Original	vt1045bp-m3/4w vbt1045bp-e3/4w vft1045bp-m3/4w vt2045bp-m3/4w +16vbt2045bp-e3/4w vft2045bp-m3/4w vt3045bp-m3/4w vbt3045bp-e3/4w vft3045bp-m3/4w vt4045bp-m3/4w powerpak 1212-8 mosfet so8 smd dip4 powerpak so-8 cny65 cross sisa12dn-t1-ge3 smd-4 cny66 cross vbt4045bp-e3 4 dip	PDF
Contextual Info: Vishay Intertechnology, Inc. Telecommunications Telecommunications Infrastructure One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Telecommunications テレコミュニケーション・インフラ	Original	aec-q101 vmn-ms6792-1304-teti	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF

N-Channel MOSFETs Contextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in	Original	sc-70 sc-75 1212-8s vmn-ms6926-1406 +1n-channel mosfets	PDF