SIR642DP Search Results
SIR642DP Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIR642DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 60A 8SOIC | Original | 9 |
SIR642DP Price and Stock
Vishay Intertechnologies SIR642DPT1GE3N-channel MOSFET, 200V, 17A, Vishay, DPAK package |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIR642DPT1GE3 | 3,000 |
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Get Quote | |||||||
SIR642DP Datasheets Context Search
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Contextual Info: New Product SiR642DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 TrenchFET Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see |
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sir642dpsir642dp-t1-ge32002/95/ec2011/65/eu+2 | |
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Contextual Info: SPICE Device Model SiR642DP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sir642dp2002/95/ec2011/65/eujs709a+1 | |
SiR642DP
Abstract: SIR642
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sir642dpsir642dp-t1-ge32011/65/eu2002/95/ec+2 | |
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Contextual Info: New Product SiR642DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 TrenchFET Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see |
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sir642dpsir642dp-t1-ge32002/95/ec2011/65/eu+2 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 | |
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Contextual Info: XR75100 40V Synchronous Step Down COT Controller FEATURES General Description 20A Capable Step Down Controller Wide 5.5V to 40V Input Voltage Range Integrated High Current 2A/3A Drivers 0.6 to 30V Adjustable Output Voltage Proprietary Constant On-Time Control |
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xr75100200ns100khz800khz+2 | |
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Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs 40 V, 60 V, and 80 V TrenchFET Gen IV Higher Efficiency and Power Density with Low RDS on and Excellent Dynamic Characteristics KEY BENEFITS • Reduce power loss from conduction with 40 % lower RDS(on) than previous-generation device. 60 V MOSFETs |
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o-263si4038dysis488dnsum50020el+6 | |
N-Channel MOSFETsContextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in |
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sc-70sc-751212-8svmn-ms6926-1406+1 |