S1203 Search Results

processor cross reference

Abstract: s1203 au44
Contextual Info: >4M C C Part Number S1203 Revision 1.1 - May. 1999 EXPLORER SUMMARY DATASHEET MULTIRATE POS/ATM SONET MAPPER FOR OC-48/12/3/1 Complies with ANSI, Bellcore and ITU-T specifications for Jitter Tolerance, Jitter Transfer and Jitter Generation Provides cross-connect for STS-1, STS-3 and STS-12

A1t smd

Abstract: IMS1203M sei smd resistors IMS1203A-25M IMS1203M-2S IMS1203M-35 IMS1203M-45 IMS1203S-25M IMS1203S-35M ceramic pin grid array package lead finish gold
Contextual Info: S1203M CMOS High Performance 4K x 1 Static RAM MIL-STD-883C ÏTüTIOS* D ESCR IPTIO N FE A TU R ES The IN M O S IM S 1203M is a high speed C M O S 4Kx1 static RAM processed in full compliance to MIL-STD883C . The IM S1203M provides performance enhance­

Contextual Info: New Product SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00100 at VGS = 10 V 60 0.00135 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification

Contextual Info: SUM60N10-17 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 • TrenchFET Power MOSFETS RDS(on) () ID (A) 0.0165 at VGS = 10 V 60 0.0190 at VGS = 6 V 56 • 175 °C Junction Temperature • • • • Low Thermal Resistance Package

diode s1 77

Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
Contextual Info: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28

Contextual Info: S1203M CMOS High Performance 4K x 1 Static RAM MIL-STD-883C 17103« FEATURES DESCRIPTION • INMOS'Very High Speed CMOS • Advanced Process -1.6 Micron Design Rules •Specifications guaranteed over full military temperature range -55° C to + 125“ C

Contextual Info: Si1972DH Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.190 at VGS = 10 V 1.3 0.344 at VGS = 4.5 V 1.3 VDS (V) 30 Qg (Typ.) 0.91 nC • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 (6-LEADS)

Contextual Info: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8

Contextual Info: New Product SiSA12DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • Switch Mode Power Supplies PowerPAK 1212-8

Contextual Info: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

MMUN2111 N

Abstract: n3904 019 PN3904 smd code 1HF IRL3103 PC mother board power PC soft start PC reset circuit
Contextual Info: CS-5155H CPU 5-Bit Synchronous Buck Controller Description The CS-5155H is a 5-bit syn­ chronous dual N-Channel buck controller. It is designed to provide unprecedented transient response for today's demanding high-density, high-speed logic. The regulator

Contextual Info: New Product SiR401DP Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)d 0.0032 at VGS = - 10 V - 50 0.0042 at VGS = - 4.5 V - 50 0.0077 at VGS = - 2.5 V - 50 Qg (Typ.) 97 nC APPLICATIONS PowerPAK SO-8

PowerPAK

Contextual Info: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8

Contextual Info: SUM60N10-17 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 • TrenchFET Power MOSFETS RDS(on) () ID (A) 0.0165 at VGS = 10 V 60 0.0190 at VGS = 6 V 56 • 175 °C Junction Temperature • • • • Low Thermal Resistance Package

Contextual Info: Si1972DH Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.190 at VGS = 10 V 1.3 0.344 at VGS = 4.5 V 1.3 VDS (V) 30 Qg (Typ.) 0.91 nC • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 (6-LEADS)

Contextual Info: New Product SiR401DP Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)d 0.0032 at VGS = - 10 V - 50 0.0042 at VGS = - 4.5 V - 50 0.0077 at VGS = - 2.5 V - 50 Qg (Typ.) 97 nC APPLICATIONS PowerPAK SO-8

8axx

Abstract: FS PAD 0326
Contextual Info: SQ3426EEV www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Typical ESD Protection 800 V • AEC-Q101 Qualified

SIRA12DP

Abstract: diode gen 52
Contextual Info: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8

4kx1 static ram

Abstract: MS-1203 S1203
Contextual Info: „ I M : •■■■■■Si ■■■■ Mm OS* cmos High Performance 4K x 1 Static RAM MIL-STD-883C FEA TU R E S D E SCR IPTIO N • IN M O S' Very High Speed C M OS • Advanced Process - 1.6 Micron Design Rules • Specifications guaranteed over full military

SUM90N10-8m2P

Abstract: SUM90N
Contextual Info: SUM90N10-8m2P Vishay Siliconix N Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) () 100 0.0082 at VGS = 10 V ID (A) 90 d Qg (Typ) 97 • • • • TrenchFET Power MOSFETS 175 °C Junction Temperature 100 % Rg and UIS Tested

63817

Abstract: SO8L dual
Contextual Info: SQJ951EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY ID (A) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

Contextual Info: SQJ951EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY ID (A) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

3650S-1-501

Abstract: 3640S-1-153
Contextual Info: 1-1/4” 32MM DIAMETER / 10-TURN / DIGITAL/WIREWOUND • Easy single-hole mounting with recessed cup provided ■ Digital dial provides excellent readability ■ Cost saving; pre-phased POURNS _ F O R O R D E R IN G IN F O R M A T IO N S E E P A G E 3 0 0 ._