SIRA04DP Search Results

Contextual Info: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8

Contextual Info: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8

Contextual Info: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8

Contextual Info: SiRA04DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: SPICE Device Model SiRA04DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8

Contextual Info: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8

Contextual Info: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8

Contextual Info: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8

62510

Abstract: SIRA04DP
Contextual Info: SPICE Device Model SiRA04DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8

Contextual Info: Vishay Intertechnology, Inc. Computer Portable Computers One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer Portable Computers Notebooks 4 Ultrabooks 5 Tablet PCs 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:

PowerPAK 1212-8

Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip
Contextual Info: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications

POWERPAK SO8

Abstract: SIS32
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V

Contextual Info: Vishay Intertechnology, Inc. Computer Portable Computers One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer ポータブルコンピューター ノートブック 4 ウルトラブック 5

N-Channel MOSFETs

Contextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in