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    SIRA06DP Search Results

    SIRA06DP Datasheets (1)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIRA06DP-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A SO8 PWR PK Original PDF 9
    SF Impression Pixel

    SIRA06DP Price and Stock

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    Vishay Intertechnologies SIRA06DP-T1-GE3

    Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 40W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIRA06DP-T1-GE3 970 1
    • 1 $1.28
    • 10 $1.04
    • 100 $0.77
    • 1000 $0.58
    • 10000 $0.46
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    Verical SIRA06DP-T1-GE3 970 56
    • 1 -
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    • 100 $0.95
    • 1000 $0.71
    • 10000 $0.63
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    Avnet Americas () SIRA06DP-T1-GE3 Tape & Reel 3,000 52 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
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    • 10000 $0.47
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    SIRA06DP-T1-GE3 Ammo Pack 1
    • 1 $2.19
    • 10 $2.19
    • 100 $1.05
    • 1000 $0.86
    • 10000 $0.84
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    Mouser Electronics SIRA06DP-T1-GE3 3,582
    • 1 $2.11
    • 10 $1.02
    • 100 $0.91
    • 1000 $0.73
    • 10000 $0.54
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    Newark () SIRA06DP-T1-GE3 Tape & Reel 109 10
    • 1 $2.19
    • 10 $2.19
    • 100 $1.05
    • 1000 $0.86
    • 10000 $0.82
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    SIRA06DP-T1-GE3 Cut Tape 109 1
    • 1 $2.19
    • 10 $2.19
    • 100 $1.05
    • 1000 $0.86
    • 10000 $0.82
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    SIRA06DP-T1-GE3 Tape & Reel 3,000
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    • 10000 $0.47
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    TTI SIRA06DP-T1-GE3 Reel 3,000 3,000
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    • 10000 $0.47
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    Bristol Electronics SIRA06DP-T1-GE3 975 1
    • 1 $0.46
    • 10 $0.46
    • 100 $0.17
    • 1000 $0.13
    • 10000 $0.13
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    Quest Components () SIRA06DP-T1-GE3 780
    • 1 $0.62
    • 10 $0.62
    • 100 $0.31
    • 1000 $0.18
    • 10000 $0.18
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    SIRA06DP-T1-GE3 780
    • 1 $0.62
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    • 100 $0.31
    • 1000 $0.18
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    SIRA06DP-T1-GE3 780
    • 1 $1.52
    • 10 $1.52
    • 100 $0.76
    • 1000 $0.61
    • 10000 $0.61
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    SIRA06DP-T1-GE3 780
    • 1 $1.52
    • 10 $1.52
    • 100 $0.76
    • 1000 $0.61
    • 10000 $0.61
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    Chip 1 Exchange SIRA06DP-T1-GE3 2,428
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    EBV Elektronik SIRA06DP-T1-GE3 53 Weeks 3,000
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    Vishay Siliconix SIRA06DP-T1-GE3

    SEMICONCUCTOR, MOSFET;TRENCHFET;N-CHANNEL;30V;40A;2.5MOHM @ 10V;POWERPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SIRA06DP-T1-GE3 Bulk 3,000
    • 1 -
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    • 1000 -
    • 10000 $1.41
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    Vishay Intertechnologies SIRA06DPT1GE3

    N-CHANNEL 30 V (D-S) MOSFET Power Field-Effect Transistor, 40A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SIRA06DPT1GE3 3,000
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    SIRA06DP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		sira06dpsira06dp-t1-ge32011/65/eu2002/95/ec+112-mar-12 PDF

    Contextual Info: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		sira06dp2002/95/ecsira06dp-t1-ge32011/65/eu+112-mar-12 PDF

    Contextual Info: SPICE Device Model SiRA06DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		sira06dp2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: SiRA06DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		sira06dpan6097147m0050m+62770m2112m2966u6358m2966m8532n PDF

    Contextual Info: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		sira06dpsira06dp-t1-ge32002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		sira06dpsira06dp-t1-ge32002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		sira06dp2002/95/ecsira06dp-t1-ge311-mar-11 PDF

    Contextual Info: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		sira06dpsira06dp-t1-ge32002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		sira06dp2002/95/ecsira06dp-t1-ge32011/65/eu+112-mar-12 PDF

    Contextual Info: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		sira06dpsira06dp-t1-ge32011/65/eu2002/95/ec+112-mar-12 PDF

    Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:


    Original     		siz916dtsiz340dtsiz914dtvmn-pt0306-1402 PDF

    PowerPAK 1212-8

    Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip
    Contextual Info: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications


    Original     		vt1045bp-m3/4wvbt1045bp-e3/4wvft1045bp-m3/4wvt2045bp-m3/4w+16vbt2045bp-e3/4wvft2045bp-m3/4wvt3045bp-m3/4wvbt3045bp-e3/4wvft3045bp-m3/4wvt4045bp-m3/4wpowerpak 1212-8mosfet so8 smddip4powerpak so-8cny65 crosssisa12dn-t1-ge3smd-4cny66 crossvbt4045bp-e34 dip PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8si-4102si4599si4483asir166irfd120si7949si4459asir836 PDF

    POWERPAK SO8

    Abstract: SIS32
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V


    Original     		siz916dtvmn-pt0306-1209powerpak so8sis32 PDF