SIRA12DP Search Results
SIRA12DP Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SIRA12DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 25A SO8 PWR PK | Original | 9 |
SIRA12DP Price and Stock
Vishay Siliconix SIRA12DP-T1-GE3MOSFET N-CH 30V 25A PPAK SO-8 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIRA12DP-T1-GE3 | Digi-Reel | 5,726 | 1 |
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SIRA12DP-T1-GE3 | 13,700 |
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Vishay Intertechnologies SIRA12DP-T1-GE3N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIRA12DP-T1-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIRA12DP-T1-GE3 | Reel | 18 Weeks | 3,000 |
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SIRA12DP-T1-GE3 | 17,825 |
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SIRA12DP-T1-GE3 | 3,000 | 3,000 |
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SIRA12DP-T1-GE3 | 3,000 | 18 Weeks | 3,000 |
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SIRA12DP-T1-GE3 | Reel | 3,000 |
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SIRA12DP-T1-GE3 | Reel | 3,000 | 3,000 |
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Buy Now | |||||
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SIRA12DP-T1-GE3 | 1 |
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SIRA12DP-T1-GE3 | 6,000 | 18 Weeks | 3,000 |
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SIRA12DP-T1-GE3 | Cut Tape | 1,900 | 0 Weeks, 1 Days | 1 |
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SIRA12DP-T1-GE3 | 19 Weeks | 3,000 |
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SIRA12DP-T1-GE3 | 6,073 |
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SIRA12DP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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PowerPAKContextual Info: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8 |
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SiRA12DP 2002/95/EC SiRA12DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PowerPAK | |
SIRA12DP
Abstract: diode gen 52
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SiRA12DP 2002/95/EC SiRA12DP-T1-GE3 11-Mar-11 diode gen 52 | |
Contextual Info: SiRA12DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiRA12DP AN609, 8311m 8084u 3363m 3513m 3988m 5780m 3699m 13-Jan-12 | |
Contextual Info: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8 |
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SiRA12DP 2002/95/EC SiRA12DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
siraContextual Info: SPICE Device Model SiRA12DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiRA12DP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sira | |
Contextual Info: SPICE Device Model SiRA12DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiRA12DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8 |
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SiRA12DP 2002/95/EC SiRA12DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8 |
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SiRA12DP 2002/95/EC SiRA12DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
8025GContextual Info: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8 |
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SiRA12DP 2002/95/EC SiRA12DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 8025G | |
Contextual Info: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8 |
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SiRA12DP 2002/95/EC SiRA12DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications: |
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SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402 | |
PowerPAK 1212-8
Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip
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VT1045BP-M3/4W VBT1045BP-E3/4W VFT1045BP-M3/4W VT2045BP-M3/4W VBT2045BP-E3/4W VFT2045BP-M3/4W VT3045BP-M3/4W VBT3045BP-E3/4W VFT3045BP-M3/4W VT4045BP-M3/4W PowerPAK 1212-8 mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
POWERPAK SO8
Abstract: SIS32
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SiZ916DT VMN-PT0306-1209 POWERPAK SO8 SIS32 | |
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