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SIRA12DP Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIRA12DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 25A SO8 PWR PK	Original	PDF		9

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Vishay Intertechnologies SIRA12DP-T1-GE3 Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK SO EP T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	SIRA12DP-T1-GE3		2,995		18	1 - 10 - 100 $0.35 1000 $0.33 10000 $0.33	Buy Now
	SIRA12DP-T1-GE3		1,900		5	1 - 10 $0.32 100 $0.32 1000 $0.32 10000 $0.32	Buy Now
Avnet Americas	SIRA12DP-T1-GE3	Tape & Reel		52 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.33	Buy Now
Mouser Electronics	SIRA12DP-T1-GE3		13,972			1 $1.55 10 $0.73 100 $0.65 1000 $0.51 10000 $0.40	Buy Now
Arrow Electronics ()	SIRA12DP-T1-GE3	Cut Strips	2,995	14 Weeks	1	1 $0.37 10 $0.36 100 $0.35 1000 $0.33 10000 $0.33	Buy Now
	SIRA12DP-T1-GE3	Cut Strips	1,900		1	1 $1.20 10 $1.20 100 $1.20 1000 $1.20 10000 $1.20	Buy Now
Newark ()	SIRA12DP-T1-GE3	Cut Tape			3,000	1 - 10 - 100 - 1000 - 10000 $0.54	Buy Now
	SIRA12DP-T1-GE3	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.37	Buy Now

TTI	SIRA12DP-T1-GE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.37	Buy Now
TME	SIRA12DP-T1-GE3				1	1 $1.44 10 $0.94 100 $0.60 1000 $0.43 10000 $0.41	Get Quote
Avnet Asia	SIRA12DP-T1-GE3			54 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIRA12DP-T1-GE3			53 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SIRA12DP-T1-GE3 SEMICONCUCTOR, MOSFET;TRENCHFET;N-CHANNEL;30V;25A;4.3MOHM @ 10V;POWERPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SIRA12DP-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $1.01	Get Quote

SIRA12DP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
PowerPAK Contextual Info: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8	Original	sira12dp 2002/95/ec sira12dp-t1-ge3 2011/65/eu +3js709a 02-oct-12 powerpak	PDF
SIRA12DP Abstract: diode gen 52 Contextual Info: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8	Original	sira12dp 2002/95/ec sira12dp-t1-ge3 11-mar-11 +1diode gen 52	PDF
Contextual Info: SiRA12DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	sira12dp an609 8311m 8084u +63363m 3513m 3988m 5780m 3699m 13-jan-12	PDF
Contextual Info: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8	Original	sira12dp 2002/95/ec sira12dp-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
sira Contextual Info: SPICE Device Model SiRA12DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sira12dp 2011/65/eu 2002/95/ec 12-mar-12 +1sira	PDF
Contextual Info: SPICE Device Model SiRA12DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sira12dp 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8	Original	sira12dp 2002/95/ec sira12dp-t1-ge3 2011/65/eu +112-mar-12	PDF
Contextual Info: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8	Original	sira12dp 2002/95/ec sira12dp-t1-ge3 2011/65/eu +112-mar-12	PDF
8025G Contextual Info: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8	Original	sira12dp 2002/95/ec sira12dp-t1-ge3 2011/65/eu +212-mar-12 8025g	PDF
Contextual Info: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8	Original	sira12dp 2002/95/ec sira12dp-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:	Original	siz916dt siz340dt siz914dt vmn-pt0306-1402	PDF
PowerPAK 1212-8 Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip Contextual Info: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications	Original	vt1045bp-m3/4w vbt1045bp-e3/4w vft1045bp-m3/4w vt2045bp-m3/4w +16vbt2045bp-e3/4w vft2045bp-m3/4w vt3045bp-m3/4w vbt3045bp-e3/4w vft3045bp-m3/4w vt4045bp-m3/4w powerpak 1212-8 mosfet so8 smd dip4 powerpak so-8 cny65 cross sisa12dn-t1-ge3 smd-4 cny66 cross vbt4045bp-e3 4 dip	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF
POWERPAK SO8 Abstract: SIS32 Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V	Original	siz916dt vmn-pt0306-1209 powerpak so8 sis32	PDF