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    SUM90N Search Results

    SUM90N Datasheets (8)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SUM90N03-2M2P-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 90A D2PAK Original PDF 8
    SUM90N04-3M3P-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 90A D2PAK Original PDF 8
    SUM90N06-4M4P-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 90A D2PAK Original PDF 8
    SUM90N06-5M5P-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 90A D2PAK Original PDF 8
    SUM90N08-4M8P-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 90A D2PAK Original PDF 6
    SUM90N08-6M2P-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 90A D2PAK Original PDF 8
    SUM90N08-7M6P-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 90A D2PAK Original PDF 8
    SUM90N10-8M2P-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 90A D2PAK Original PDF 8
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    Vishay Intertechnologies SUM90N10-8M2P-E3

    Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 90A; Idm: 240A
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    TME SUM90N10-8M2P-E3 101 1
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    Verical () SUM90N10-8M2P-E3 101 17
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    SUM90N10-8M2P-E3 13 4
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    Arrow Electronics SUM90N10-8M2P-E3 Cut Strips 13 99 Weeks 1
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    TTI SUM90N10-8M2P-E3 Cut Tape 10
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    Bristol Electronics SUM90N10-8M2P-E3 288 1
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    Quest Components () SUM90N10-8M2P-E3 315
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    SUM90N10-8M2P-E3 230
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    SUM90N10-8M2P-E3 230
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    Chip 1 Exchange SUM90N10-8M2P-E3 131,891
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    Vishay Intertechnologies SUM90N03-2M2P-E3

    Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 90A; Idm: 200A
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    TME SUM90N03-2M2P-E3 800
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    Avnet Americas SUM90N03-2M2P-E3 Tape & Reel 52 Weeks 800
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    TTI SUM90N03-2M2P-E3 Reel 800
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    Avnet Asia SUM90N03-2M2P-E3 54 Weeks 800
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    EBV Elektronik SUM90N03-2M2P-E3 53 Weeks 800
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    Vishay Intertechnologies SUM90N06-5M5P-E3

    - Tape and Reel (Alt: SUM90N06-5M5P-E3)
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    Avnet Americas SUM90N06-5M5P-E3 Tape & Reel 800
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    Vishay Siliconix SUM90N06-4M4P-E3

    SUM90N06-4M4P-E3 N-CHANNEL MOSFET TRANSISTOR, 90 A, 60 V, 2+TAB-PIN TO-263
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    RS SUM90N06-4M4P-E3 Bulk 1
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    • 1000 $1.96
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    Vishay Siliconix SUM90N04-3M3P-E3

    SUM90N04-3M3P-E3 N-CHANNEL MOSFET TRANSISTOR, 90 A, 40 V, 2+TAB-PIN TO-263
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    RS SUM90N04-3M3P-E3 Bulk 5
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    SUM90N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original
    sum90n06-5m5po-263sum90n06-5m5p-e308-apr-05 PDF

    Contextual Info: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original
    sum90n08-7m6po-263sum90n08-7m6p-e318-jul-08 PDF

    SUM90N10

    Abstract: 74643 sum90n10-8m2p
    Contextual Info: SUM90N10-8m2P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 100 0.0082 at VGS = 10 V 90d 97 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original
    sum90n10-8m2po-263sum90n10-8m2p-e318-jul-08+2sum90n1074643 PDF

    Contextual Info: SPICE Device Model SUM90N08-6m2P Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    sum90n08-6m2p18-jul-08 PDF

    3809

    Abstract: 7483 AN609 28728
    Contextual Info: SUM90N04-3m4P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    sum90n04-3m4pan60921-jun-073809+2748328728 PDF

    Contextual Info: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original
    sum90n08-7m6po-263sum90n08-7m6p-e32002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original
    sum90n06-5m5po-263sum90n06-5m5p-e32002/95/ec+32011/65/eujs709a02-oct-12 PDF

    SUM90N06-4M4P

    Contextual Info: SUM90N06-4m4P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0044 at VGS = 10 V 90d 105 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original
    sum90n06-4m4po-263sum90n06-4m4p-e318-jul-08 PDF

    Contextual Info: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original
    sum90n06-5m5po-263sum90n06-5m5p-e311-mar-11 PDF

    SUM90N10-8m2P

    Abstract: SUM90N
    Contextual Info: SUM90N10-8m2P Vishay Siliconix N Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) () 100 0.0082 at VGS = 10 V ID (A) 90 d Qg (Typ) 97 • • • • TrenchFET Power MOSFETS 175 °C Junction Temperature 100 % Rg and UIS Tested


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    sum90n10-8m2p2002/95/eco-263sum90n10-8m2p-e3+32011/65/eu12-mar-12sum90n PDF

    SUM90N08

    Abstract: 4A88
    Contextual Info: SUM90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d 0.006 at VGS = 8 V 90 d • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % UIS Tested Qg (Typ)


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    sum90n08-4m8po-263sum90n08-4m8p-e318-jul-08+2sum90n084a88 PDF

    Contextual Info: SPICE Device Model SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    sum90n04-3m3p2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original
    sum90n08-7m6po-263sum90n08-7m6p-e32011/65/eu+22002/95/ec12-mar-12 PDF

    Contextual Info: SUM90N08-6m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0062 at VGS = 10 V 90d 75 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original
    sum90n08-6m2po-263sum90n08-6m2p-e32011/65/eu+22002/95/ec12-mar-12 PDF

    QG60

    Contextual Info: SPICE Device Model SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    sum90n08-7m6p18-jul-08qg60 PDF

    6077

    Abstract: 717 MOSFET na 7705 AN609
    Contextual Info: SUM90N03-2m2P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    sum90n03-2m2pan60920-jul-076077+2717 mosfetna 7705 PDF

    121-398

    Abstract: 4828 datasheet 4828 7483 transistor c 6073 AN609
    Contextual Info: SUM90N06-4m4P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    sum90n06-4m4pan60921-jun-07121-398+44828datasheet 48287483transistor c 6073 PDF

    SUM90N04

    Contextual Info: SUM90N04-3m3P_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    sum90n04-3m3pan6099529m6341m+70475m8594m6655u4656m9616m17-aug-11sum90n04 PDF

    74342

    Abstract: SUM90N03
    Contextual Info: New Product SUM90N03-2m2P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a, e 0.0022 at VGS = 10 V 90 0.0027 at VGS = 4.5 V 90 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 82 nC


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    sum90n03-2m2po-263sum90n03-2m2p-e308-apr-05+274342sum90n03 PDF

    uaa70

    Contextual Info: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original
    sum90n08-7m6po-263sum90n08-7m6p-e308-apr-05+1uaa70 PDF

    Contextual Info: SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () MAX. ID (A) d 0.0033 at VGS = 10 V 90 0.0041 at VGS = 4.5 V 90 Qg (TYP.) 87 • TrenchFET Power MOSFET • 100 % Rg and UIS tested


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    sum90n04-3m3po-263sum90n04-3m3p-e32002/95/ec+32011/65/eujs709a02-oct-12 PDF

    SUM90N10

    Abstract: SUM90N10-8m2P
    Contextual Info: SPICE Device Model SUM90N10-8m2P Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    sum90n10-8m2p18-jul-08sum90n10 PDF

    7447

    Abstract: 8807 datasheet 7447 AN609
    Contextual Info: SUM90N06-5m5P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    sum90n06-5m5pan60918-sep-077447+28807datasheet 7447 PDF

    Contextual Info: SPICE Device Model SUM90N03-2m2P www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    sum90n03-2m2p2002/95/ec2011/65/eujs709a+102-oct-12 PDF