SUM90N Search Results
SUM90N Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| SUM90N03-2M2P-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 90A D2PAK | Original | 8 | |||
| SUM90N04-3M3P-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 90A D2PAK | Original | 8 | |||
| SUM90N06-4M4P-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 90A D2PAK | Original | 8 | |||
| SUM90N06-5M5P-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 90A D2PAK | Original | 8 | |||
| SUM90N08-4M8P-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 90A D2PAK | Original | 6 | |||
| SUM90N08-6M2P-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 90A D2PAK | Original | 8 | |||
| SUM90N08-7M6P-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 90A D2PAK | Original | 8 | |||
| SUM90N10-8M2P-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 90A D2PAK | Original | 8 |
SUM90N Price and Stock
Vishay Intertechnologies SUM90N10-8M2P-E3Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 90A; Idm: 240A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SUM90N10-8M2P-E3 | 101 | 1 |
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SUM90N10-8M2P-E3 | 101 | 17 |
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| SUM90N10-8M2P-E3 | 13 | 4 |
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SUM90N10-8M2P-E3 | Cut Strips | 13 | 99 Weeks | 1 |
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SUM90N10-8M2P-E3 | Cut Tape | 10 |
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SUM90N10-8M2P-E3 | 288 | 1 |
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SUM90N10-8M2P-E3 | 315 |
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| SUM90N10-8M2P-E3 | 230 |
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| SUM90N10-8M2P-E3 | 230 |
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SUM90N10-8M2P-E3 | 131,891 |
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Vishay Intertechnologies SUM90N03-2M2P-E3Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 90A; Idm: 200A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SUM90N03-2M2P-E3 | 800 |
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SUM90N03-2M2P-E3 | Tape & Reel | 52 Weeks | 800 |
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SUM90N03-2M2P-E3 | Reel | 800 |
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SUM90N03-2M2P-E3 | 54 Weeks | 800 |
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SUM90N03-2M2P-E3 | 53 Weeks | 800 |
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Vishay Intertechnologies SUM90N06-5M5P-E3- Tape and Reel (Alt: SUM90N06-5M5P-E3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SUM90N06-5M5P-E3 | Tape & Reel | 800 |
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Vishay Siliconix SUM90N06-4M4P-E3SUM90N06-4M4P-E3 N-CHANNEL MOSFET TRANSISTOR, 90 A, 60 V, 2+TAB-PIN TO-263 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SUM90N06-4M4P-E3 | Bulk | 1 |
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Vishay Siliconix SUM90N04-3M3P-E3SUM90N04-3M3P-E3 N-CHANNEL MOSFET TRANSISTOR, 90 A, 40 V, 2+TAB-PIN TO-263 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SUM90N04-3M3P-E3 | Bulk | 5 |
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SUM90N Datasheets Context Search
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Contextual Info: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT |
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sum90n06-5m5po-263sum90n06-5m5p-e308-apr-05 | |
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Contextual Info: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT |
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sum90n08-7m6po-263sum90n08-7m6p-e318-jul-08 | |
SUM90N10
Abstract: 74643 sum90n10-8m2p
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sum90n10-8m2po-263sum90n10-8m2p-e318-jul-08+2 | |
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Contextual Info: SPICE Device Model SUM90N08-6m2P Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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sum90n08-6m2p18-jul-08 | |
3809
Abstract: 7483 AN609 28728
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sum90n04-3m4pan60921-jun-073809+2 | |
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Contextual Info: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT |
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sum90n08-7m6po-263sum90n08-7m6p-e32002/95/ec+3 | |
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Contextual Info: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT |
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sum90n06-5m5po-263sum90n06-5m5p-e32002/95/ec+3 | |
SUM90N06-4M4PContextual Info: SUM90N06-4m4P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0044 at VGS = 10 V 90d 105 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT |
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sum90n06-4m4po-263sum90n06-4m4p-e318-jul-08 | |
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Contextual Info: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT |
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sum90n06-5m5po-263sum90n06-5m5p-e311-mar-11 | |
SUM90N10-8m2P
Abstract: SUM90N
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sum90n10-8m2p2002/95/eco-263sum90n10-8m2p-e3+3 | |
SUM90N08
Abstract: 4A88
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sum90n08-4m8po-263sum90n08-4m8p-e318-jul-08+2 | |
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Contextual Info: SPICE Device Model SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sum90n04-3m3p2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT |
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sum90n08-7m6po-263sum90n08-7m6p-e32011/65/eu+2 | |
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Contextual Info: SUM90N08-6m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0062 at VGS = 10 V 90d 75 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT |
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sum90n08-6m2po-263sum90n08-6m2p-e32011/65/eu+2 | |
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QG60Contextual Info: SPICE Device Model SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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sum90n08-7m6p18-jul-08qg60 | |
6077
Abstract: 717 MOSFET na 7705 AN609
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sum90n03-2m2pan60920-jul-076077+2 | |
121-398
Abstract: 4828 datasheet 4828 7483 transistor c 6073 AN609
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sum90n06-4m4pan60921-jun-07121-398+4 | |
SUM90N04Contextual Info: SUM90N04-3m3P_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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sum90n04-3m3pan6099529m6341m+7 | |
74342
Abstract: SUM90N03
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sum90n03-2m2po-263sum90n03-2m2p-e308-apr-05+2 | |
uaa70Contextual Info: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT |
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sum90n08-7m6po-263sum90n08-7m6p-e308-apr-05+1 | |
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Contextual Info: SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () MAX. ID (A) d 0.0033 at VGS = 10 V 90 0.0041 at VGS = 4.5 V 90 Qg (TYP.) 87 • TrenchFET Power MOSFET • 100 % Rg and UIS tested |
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sum90n04-3m3po-263sum90n04-3m3p-e32002/95/ec+3 | |
SUM90N10
Abstract: SUM90N10-8m2P
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sum90n10-8m2p18-jul-08sum90n10 | |
7447
Abstract: 8807 datasheet 7447 AN609
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sum90n06-5m5pan60918-sep-077447+2 | |
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Contextual Info: SPICE Device Model SUM90N03-2m2P www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sum90n03-2m2p2002/95/ec2011/65/eujs709a+1 | |