SUM90N04 Search Results
SUM90N04 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SUM90N04-3M3P-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 90A D2PAK | Original | 8 |
SUM90N04 Price and Stock
Vishay Siliconix SUM90N04-3M3P-E3SUM90N04-3M3P-E3 N-CHANNEL MOSFET TRANSISTOR, 90 A, 40 V, 2+TAB-PIN TO-263 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SUM90N04-3M3P-E3 | Bulk | 5 |
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Vishay Intertechnologies SUM90N04-M3P-E3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SUM90N04-M3P-E3 | 27 |
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SUM90N04 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
3809
Abstract: 7483 AN609 28728
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sum90n04-3m4pan60921-jun-073809+2 | |
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Contextual Info: SPICE Device Model SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sum90n04-3m3p2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: New Product SUM90N04-3m3P Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 d RDS(on) () Max. ID (A) 0.0033 at VGS = 10 V 90 0.0041 at VGS = 4.5 V 90 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC |
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sum90n04-3m3p2002/95/eco-263sum90n04-3m3p-e3+1 | |
SUM90N04Contextual Info: SUM90N04-3m3P_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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sum90n04-3m3pan6099529m6341m+7 | |
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Contextual Info: SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () MAX. ID (A) d 0.0033 at VGS = 10 V 90 0.0041 at VGS = 4.5 V 90 Qg (TYP.) 87 • TrenchFET Power MOSFET • 100 % Rg and UIS tested |
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sum90n04-3m3po-263sum90n04-3m3p-e32002/95/ec+3 | |
A 69157
Abstract: 69157 mosfet 69157 V5805 SUM90N04-3m4P S-71488 S-71488Rev A7255
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sum90n04-3m4p18-jul-08a 6915769157+5 | |
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Contextual Info: SPICE Device Model SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
sum90n04-3m3p11-mar-11 | |
SUM90N04-3m3PContextual Info: New Product SUM90N04-3m3P Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 d RDS(on) () Max. ID (A) 0.0033 at VGS = 10 V 90 0.0041 at VGS = 4.5 V 90 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC |
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sum90n04-3m3p2002/95/eco-263sum90n04-3m3p-e3+2 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 |