S-BAND 50 WATT POWER AMPLIFIER Search Results

5 Watt S-Band Power Amplifier

Abstract: 2 Watt S-Band Power Amplifier s-band 50 Watt power amplifier S-band mmic Watt AM42-0055 CR-15 amplifier 1000 watt HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz S-Band Power Amplifier
Contextual Info: 1 Watt/2 Watt S-Band Power Amplifier AM42-0055 2.2 - 2.4 GHz V 1P.00 Preliminary Features OUTLINE DRAWING • High Linear Gain: 29 dB typ. • High Saturated Output Power: +33 dBm typ. • 50 Ohm Input/Output Broadband Matched 1 -C.70 .530 .085 10 10X .050 MIN.

Contextual Info: 1 Watt/2 Watt S-Band Power Amplifier AM42-0055 2.2 - 2.4 GHz V 1P.00 Preliminary Features OUTLINE DRAWING 1 • High Linear Gain: 29 dB typ. • High Saturated Output Power: +33 dBm typ. • 50 Ohm Input/Output Broadband Matched -C.70 .530 .085 10 10X .050 MIN.

2 Watt S-Band Power Amplifier

Abstract: s-band 50 Watt power amplifier S-Band Power Amplifier s-band 50 Watt power amplifier DATASHEET AM42-0055 CR-15 MMIC s-band MMIC POWER AMPLIFIER S-BAND 2 Watt rf Amplifier HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz
Contextual Info: AM42-0055 1 Watt/2 Watt S-Band Power Amplifier 2.2 - 2.4 GHz Rev. V1 Features Outline Drawing 1 • High Linear Gain: 29 dB typ. • High Saturated Output Power: +33 dBm typ. • 50 Ohm Input/Output Broadband Matched Description M/A-COM’s AM42-0055 is a two stage MMIC power

GRM39COG221J050AD

Abstract: A17014 MMA707 MMA707-3030 ATC600S1R8AT250 A55085 Rogers RO4003 grm39 RO40 GRM39COG221J050A
Contextual Info: MMA707 1 Watt InGaP HBT Amplifier FEATURES MMA707 • High Output Power: +31 dBm Typ -3030 • High 3rd Order IP: +50 dBm (Typ) • High Dynamic Range: 97 dB (Typ) 3mm x 3mm square • 3mm square QFN plastic package DESCRIPTION The MMA707-3030 is a Power InGaP HBT device that is designed to provide moderate power

AVANTEK solid state

Abstract: AVANTEK awp AWP-64200RM MS3102A-14S-6P Avantek amp Avantek amplifier Avantek amplifier 140 AWP-64200 1-800-AVANTEK Avantek
Contextual Info: O aw n tek Satellite Communications: Uplink Power Amplifiers Features ACU-64100 RM • High Linearity • High Gain • Low/No Maintenance • Long Life • Fail Soft • C Band Description Avantek's C Band satellite uplink power amplifiers are designed to provide exceptionally high linearity. They may be

662a-20

Abstract: MS2601A omega 650 HP 435B 435B 662a fluke 8050a plotter hp 7470A anritsu MS260
Contextual Info: LZY-2 ULTRA LINEAR RF AMPLIFIER 500 MHz - 1000 MHz 20 WATTS MIN., 1 dB COMPRESSION 40 dB MIN. GAIN TABLE OF CONTENTS 1.0 General Description 2.0 Electrical Performance Specifications 3.0 Mechanical Specifications 4.0 Electrical Featuress 4.1 Overdrive Protection

Contextual Info: Multi-carrier Power Amplifier Family 1900 MHz Band FEATURES • Scalable power to 340W • IS-97 CDMA , IS-136 (TDMA), AMPS and CDPD compliant • Industry leading efficiency • PowerStackTM architecture provides inherent soft fail protection • Hot swap, field replaceable modules

GSC371BAL2000

Abstract: Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W FLL400IP-2 gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band
Contextual Info: FUJITSU APPLICATION NOTE - No 002 1930MHz - 1990 MHz PCS BASE STATION APPLICATIONS 40 Watt Push-Pull Amplifier using the FLL400IP-2 GaAs FET FEATURES • Meets CDMA ACP at Pout>8W • Easy tuning for Power, IM3 or CDMA ACP • Over 40 W P1dB over entire PCS band

2 Watt rf Amplifier

Abstract: HMC139 5 watt microwave amplifier 10 watt 16 ohm power amplifier "15 GHz" power amplifier 10 watt D000G4D
Contextual Info: ^□0 4 12 5 D00 0G4 D ÖSb IHTM HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC139 JANUARY 1994 Features ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 4 TO 7 GHz 2.5 WATT OUTPUT POWER General Description The HMC139 is a GaAs MMIC amplifier

Contextual Info: 'ìD D m e S G00D04D ÔSb •HTM HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC139 JANUARY 1994 Features ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 4 TO 7 GHz 2.5 WATT OUTPUT POWER General Description The HMC139 is a GaAs MMIC amplifier

Contextual Info: =1004125 0 0 0 0 0 3 0 ITfl • H T M HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC138 JANUARY 1994 ! * - ■ ’ ii ■ IB js s Features ■ ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 2 TO 4GHz 2.5 WATT OUTPUT POWER

Contextual Info: w h ew lett WLish 'KMPA CK A RD General Purpose: Narrowband Power Amplifier and C A R S Band Preamplifiers Features AWP Series 3.7 to 11.7 GHz. • High Reliability • Energy Efficiency • FC C Type Accepted • High Channel Loading Capacity • Easy to Install

DC bias of gaas FET

Abstract: uly 2003 15 watt power amplifier " 15 GHz" 10041E MO-90
Contextual Info: HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC138 FEBRUARY 1995 Features fi wmË ON-CHIP MATCHING CIRCUITRY * *• ttm m tm m t 30% POW ER-ADDED EFFICIENCY 12dB GAIN FROM 2 TO 4GHz 2.5 W ATT OUTPUT POWER General Description Typical Performance

FSX52WF

Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Contextual Info: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of

1/C9000 - 60005

Abstract: B/C9000 - 60005 R/C9000 - 60005
Contextual Info: AN-60-005 APPLICATION NOTE LZY-2+ and LZY-2X+ ULTRA-LINEAR RF AMPLIFIER 500 MHz - 1000 MHz 20 WATTS MIN., 1 dB COMPRESSION 40 dB MIN. GAIN AN-60-005 Rev.: C M150261 (04/14/15) File: AN60005.doc This document and its contents are the properties of Mini-Circuits.

Contextual Info: ir » \ SS HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power A m p lifie r HMC139 FEBRUARY 1995 Features ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 4 TO 7 GHz 2.5 WATT OUTPUT POWER General Description Typical Performance The HMC139 is a GaAs MMIC amplifier

Contextual Info: 1720 - 2 2 Watt - 28 Volts, Class C Microwave 1700 - 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 1720-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF output power over the band 1700-2000 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes

55LT

Contextual Info: 1014 - 12 12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE The 1014-12 is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes

1417 transistor

Abstract: transistor 1417 microwave amplifier 2.4 ghz 10 watts c 1417 1417-12A 2.4 ghZ rf transistor amplifier TRANSISTOR 12 GHZ RF TRANSISTOR 1 WATT POWER TRANSISTOR 1 WATT 2.4 GHZ 1417 ic
Contextual Info: 1417 - 12A 12 Watt - 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1417-12A is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1400-1700 MHz. This transistor is designed for Microwave Broadband Class C amplifier

transistor 60 watt

Contextual Info: 1719 - 20 20 Watt - 28 Volts, Class C Microwave 1700 - 1900 MHz GENERAL DESCRIPTION CASE OUTLINE The 1719-20 is a COMMON BASE transistor capable of providing 20 Watts of Class C, RF output power over the band 1700-1900 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes

1718-32L

Contextual Info: 1718-32L 32 Watt - 24 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1718-32L is a COMMON BASE transistor capable of providing 32 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier

100 watt transistor

Contextual Info: 1819-35 35 Watt - 28 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1819-35 is a COMMON BASE transistor capable of providing 35 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes

transistor s 1014

Abstract: common base transistor
Contextual Info: 1014 - 2 2 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE 55LT, STYLE 1 The 1014-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF Output Power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes

10 watt power transistor

Contextual Info: 1720 - 20 20 Watt - 28 Volts, Class C Microwave 1700 - 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 1720-20 is a COMMON BASE transistor capable of providing 20 Watts of Class C, RF output power over the band 1700-2000 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes