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    2 WATT S-BAND POWER AMPLIFIER Search Results

    2 WATT S-BAND POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    2 WATT S-BAND POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5 Watt S-Band Power Amplifier

    Abstract: 2 Watt S-Band Power Amplifier s-band 50 Watt power amplifier S-band mmic Watt AM42-0055 CR-15 amplifier 1000 watt HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz S-Band Power Amplifier
    Text: 1 Watt/2 Watt S-Band Power Amplifier AM42-0055 2.2 - 2.4 GHz V 1P.00 Preliminary Features OUTLINE DRAWING • High Linear Gain: 29 dB typ. • High Saturated Output Power: +33 dBm typ. • 50 Ohm Input/Output Broadband Matched 1 -C.70 .530 .085 10 10X .050 MIN.


    Original     		PDF AM42-0055 AM42-0055 CR-15 5 Watt S-Band Power Amplifier 2 Watt S-Band Power Amplifier s-band 50 Watt power amplifier S-band mmic Watt amplifier 1000 watt HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz S-Band Power Amplifier

    Untitled

    Abstract: No abstract text available
    Text: 1 Watt/2 Watt S-Band Power Amplifier AM42-0055 2.2 - 2.4 GHz V 1P.00 Preliminary Features OUTLINE DRAWING 1 • High Linear Gain: 29 dB typ. • High Saturated Output Power: +33 dBm typ. • 50 Ohm Input/Output Broadband Matched -C.70 .530 .085 10 10X .050 MIN.


    Original     		PDF AM42-0055 AM42-0055 CR-15

    2 Watt S-Band Power Amplifier

    Abstract: s-band 50 Watt power amplifier S-Band Power Amplifier s-band 50 Watt power amplifier DATASHEET AM42-0055 CR-15 MMIC s-band MMIC POWER AMPLIFIER S-BAND 2 Watt rf Amplifier HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz
    Text: AM42-0055 1 Watt/2 Watt S-Band Power Amplifier 2.2 - 2.4 GHz Rev. V1 Features Outline Drawing 1 • High Linear Gain: 29 dB typ. • High Saturated Output Power: +33 dBm typ. • 50 Ohm Input/Output Broadband Matched Description M/A-COM’s AM42-0055 is a two stage MMIC power


    Original     		PDF AM42-0055 AM42-0055 2 Watt S-Band Power Amplifier s-band 50 Watt power amplifier S-Band Power Amplifier s-band 50 Watt power amplifier DATASHEET CR-15 MMIC s-band MMIC POWER AMPLIFIER S-BAND 2 Watt rf Amplifier HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz

    MAAPGM0035S

    Abstract: MAAPGM0035S-DIE
    Text: Amplifier, Power, S/C-Band, 1.6W 2.5-5.5 GHz MAAPGM0035S-DIE 903179 — Preliminary Information Features ♦ ♦ ♦ ♦ 1.6 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation MSAG Process On-Chip Bias Ladder Description The MAAPGM0035S-DIE is a 2-stage, 1.6 W power amplifier with onchip bias networks. This product is fully matched to


    Original     		PDF MAAPGM0035S-DIE MAAPGM0035S-DIE MAAPGM0035S

    GRM39COG221J050AD

    Abstract: A17014 MMA707 MMA707-3030 ATC600S1R8AT250 A55085 Rogers RO4003 grm39 RO40 GRM39COG221J050A
    Text: MMA707 1 Watt InGaP HBT Amplifier FEATURES MMA707 • High Output Power: +31 dBm Typ -3030 • High 3rd Order IP: +50 dBm (Typ) • High Dynamic Range: 97 dB (Typ) 3mm x 3mm square • 3mm square QFN plastic package DESCRIPTION The MMA707-3030 is a Power InGaP HBT device that is designed to provide moderate power


    Original     		PDF MMA707 MMA707-3030 A17014 GRM39COG221J050AD A17014 MMA707 ATC600S1R8AT250 A55085 Rogers RO4003 grm39 RO40 GRM39COG221J050A

    Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications

    Abstract: CGH55030 CGH55030-TB Tower Mounted Amplifiers GaN Bias 25 watt cgh55015 CGH55015-TB RO4350 rogers MICROWAVE TRANSISTOR
    Text: Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications Bradley J. Millon1, Simon M. Wood, Raymond S. Pengelly Cree Inc. 3026 E Cornwallis Rd Research Triangle Park, NC 27709, USA 1 brad_millon@cree.com Abstract — 2.5 and 5 Watt average power 15 and 30 Watt peak


    Original     		PDF 5030-TB Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications CGH55030 CGH55030-TB Tower Mounted Amplifiers GaN Bias 25 watt cgh55015 CGH55015-TB RO4350 rogers MICROWAVE TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: 1997 MTT Presentation Stabilizing Mosfet Amplifiers Polyfet Rf Devices S. K. Leong Stabilizing Mosfet Amplifiers • • • • • • • Series Gate Resistance Shunt Gate Resistance Drain Gate Feedback Drain Shunt Resistance Ferrite Loading Gate Circuit


    Original     		PDF

    MOBILE jammer GSM 1800 MHZ circuit diagram

    Abstract: MOBILE jammer GSM 1800 MHZ mobile jammer circuit design gsm gsm mobile jammer jammer gsm mobile jammer circuit long range jammer gsm block diagram of wireless watt meter mobile phone jammer jammer circuit for mobile communication diagram
    Text: Global Position System Low Noise Amplifier GPS, LNA, Sensitivity, Jamming, Cohabitation, TTFF This White Paper explains why an external low noise amplifier results in a better performance. Next generation mobile handsets will be equipped with GSM, WLAN, Bluetooth and GPS.


    Original     		PDF

    662a-20

    Abstract: MS2601A omega 650 HP 435B 435B 662a fluke 8050a plotter hp 7470A anritsu MS260
    Text: LZY-2 ULTRA LINEAR RF AMPLIFIER 500 MHz - 1000 MHz 20 WATTS MIN., 1 dB COMPRESSION 40 dB MIN. GAIN TABLE OF CONTENTS 1.0 General Description 2.0 Electrical Performance Specifications 3.0 Mechanical Specifications 4.0 Electrical Featuress 4.1 Overdrive Protection


    Original     		PDF dB/20 MAV-11 662a-20 MS2601A omega 650 HP 435B 435B 662a fluke 8050a plotter hp 7470A anritsu MS260

    Untitled

    Abstract: No abstract text available
    Text: Multi-carrier Power Amplifier Family 1900 MHz Band FEATURES • Scalable power to 340W • IS-97 CDMA , IS-136 (TDMA), AMPS and CDPD compliant • Industry leading efficiency • PowerStackTM architecture provides inherent soft fail protection • Hot swap, field replaceable modules


    Original     		PDF IS-97 IS-136 MCPS4000 bbbbbMPS4150 MPS4380 bbbbbMCPS4080 DS-MCPS4000

    GSC371BAL2000

    Abstract: Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W FLL400IP-2 gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band
    Text: FUJITSU APPLICATION NOTE - No 002 1930MHz - 1990 MHz PCS BASE STATION APPLICATIONS 40 Watt Push-Pull Amplifier using the FLL400IP-2 GaAs FET FEATURES • Meets CDMA ACP at Pout>8W • Easy tuning for Power, IM3 or CDMA ACP • Over 40 W P1dB over entire PCS band


    Original     		PDF 1930MHz FLL400IP-2 1930-1990MHz 720mA 96GHz GSC371BAL2000 Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band

    Untitled

    Abstract: No abstract text available
    Text: Model SM2040-37 2000-4000 MHz 5 Watt Linear Power Amplifier FOR ISM, WCS, & WLL APPLICATIONS The SM2040-37 is a small, highly linear amplifier designed for multipurpose use in military and wireless applications. Operating from 2 to 4 GHz, the amplifier is


    Original     		PDF SM2040-37 SM2040-37

    2500 watt amplifier

    Abstract: DCS1800 wideband linear rf amplifier
    Text: Model SM0825-36/36H 800-2500 MHz 4 Watt Linear Power Amplifier FOR WIDEBAND & LAB APPLICATIONS Model SM0825-36/36H is an 800 to 2500 MHz solid state GaAs amplifier designed for multi-purpose use in the wireless markets. With 1.7 GHz of bandwidth, this small amplifier can be used in AMPS,


    Original     		PDF SM0825-36/36H SM0825-36/36H DCS1800, IMT200 12VDC 2500 watt amplifier DCS1800 wideband linear rf amplifier

    TURRET, 0.064

    Abstract: westermo td-32 b SM2325-37HS
    Text: Model SM3436-37HS 3400-3600 MHz 5 Watt Linear Power Amplifier FOR ISM, WCS, & BWA APPLICATIONS The SM3436-37HS is a solid state GaAs amplifier designed primarily for multiple wireless markets. With 200 MHz of bandwidth, the amplifier can be used in Industrial Scientific Medical ISM ,


    Original     		PDF SM3436-37HS SM3436-37HS SM2325-37HS TURRET, 0.064 westermo td-32 b SM2325-37HS

    Avantek UT

    Abstract: apg avantek Avantek apg-4004mn114 Avantek amplifier APG Avantek amplifier ut Avantek S x-band Avantek amplifier Avantek Amplifier avantek apg
    Text: AMG and APG Series: Discrete Power Amplifiers Features • Wideband 1 to 2 Watt Power Output Levels • Octave and Straddleband Ranges For General Purpose Applications • Narrowband Ranges For S-Band And X-Band Radars • Weatherproof Aluminum Cases A M G and A P G Se rie s Discrete F E T Am plifiers


    OCR Scan     		PDF 1-800-AVANTEK -800-AVANTEK Avantek UT apg avantek Avantek apg-4004mn114 Avantek amplifier APG Avantek amplifier ut Avantek S x-band Avantek amplifier Avantek Amplifier avantek apg

    AVANTEK solid state

    Abstract: AVANTEK awp AWP-64200RM MS3102A-14S-6P Avantek amp Avantek amplifier Avantek amplifier 140 AWP-64200 1-800-AVANTEK Avantek
    Text: O aw n tek Satellite Communications: Uplink Power Amplifiers Features ACU-64100 RM • High Linearity • High Gain • Low/No Maintenance • Long Life • Fail Soft • C Band Description Avantek's C Band satellite uplink power amplifiers are designed to provide exceptionally high linearity. They may be


    OCR Scan     		PDF ACU-64100 AWP-64200 1-800-AVANTEK ACU-64100RM, AWP-64200RM CMR-137 CPR-137 MS3102A14S-6P AVANTEK solid state AVANTEK awp MS3102A-14S-6P Avantek amp Avantek amplifier Avantek amplifier 140 AWP-64200 1-800-AVANTEK Avantek

    FSX52WF

    Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
    Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of


    OCR Scan     		PDF FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK

    lm4136

    Abstract: LM 358 lm 324 759 Power Operational Amplifiers OPERATIONAL AMPLIFIER LM 741 2 channel 40 watt audio amplifier 12l8 LM 1709 Operational Amplifiers operational amplifier LM 324 comparator
    Text: Section 1 Operational Amplifiers s Section 1 Contents Operational Amplifiers Definition of T e rm s . Operational Amplifiers Selection G uid e.


    OCR Scan     		PDF LF147/LF347 155/L F156/L LF351 LF353 TL081 TL082 lm4136 LM 358 lm 324 759 Power Operational Amplifiers OPERATIONAL AMPLIFIER LM 741 2 channel 40 watt audio amplifier 12l8 LM 1709 Operational Amplifiers operational amplifier LM 324 comparator

    Untitled

    Abstract: No abstract text available
    Text: w h ew lett WLish 'KMPA CK A RD General Purpose: Narrowband Power Amplifier and C A R S Band Preamplifiers Features AWP Series 3.7 to 11.7 GHz. • High Reliability • Energy Efficiency • FC C Type Accepted • High Channel Loading Capacity • Easy to Install


    OCR Scan     		PDF AWP-64107 AWP-71107 AWP-77107 AWP-83107 P-117107 AWP-117109 AWP-132200

    2 Watt rf Amplifier

    Abstract: HMC139 5 watt microwave amplifier 10 watt 16 ohm power amplifier "15 GHz" power amplifier 10 watt D000G4D
    Text: ^□0 4 12 5 D00 0G4 D ÖSb IHTM HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC139 JANUARY 1994 Features ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 4 TO 7 GHz 2.5 WATT OUTPUT POWER General Description The HMC139 is a GaAs MMIC amplifier


    OCR Scan     		PDF D000G4D HMC139 HMC139 2 Watt rf Amplifier 5 watt microwave amplifier 10 watt 16 ohm power amplifier "15 GHz" power amplifier 10 watt D000G4D

    Untitled

    Abstract: No abstract text available
    Text: 'ìD D m e S G00D04D ÔSb •HTM HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC139 JANUARY 1994 Features ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 4 TO 7 GHz 2.5 WATT OUTPUT POWER General Description The HMC139 is a GaAs MMIC amplifier


    OCR Scan     		PDF G00D04D HMC139 HMC139

    Untitled

    Abstract: No abstract text available
    Text: =1004125 0 0 0 0 0 3 0 ITfl • H T M HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC138 JANUARY 1994 ! * - ■ ’ ii ■ IB js s Features ■ ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 2 TO 4GHz 2.5 WATT OUTPUT POWER


    OCR Scan     		PDF HMC138 90NDPADS

    DC bias of gaas FET

    Abstract: uly 2003 15 watt power amplifier " 15 GHz" 10041E MO-90
    Text: HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC138 FEBRUARY 1995 Features fi wmË ON-CHIP MATCHING CIRCUITRY * *• ttm m tm m t 30% POW ER-ADDED EFFICIENCY 12dB GAIN FROM 2 TO 4GHz 2.5 W ATT OUTPUT POWER General Description Typical Performance


    OCR Scan     		PDF HMC138 HMC138 T004125 DC bias of gaas FET uly 2003 15 watt power amplifier " 15 GHz" 10041E MO-90

    Untitled

    Abstract: No abstract text available
    Text: ir » \ SS HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power A m p lifie r HMC139 FEBRUARY 1995 Features ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 4 TO 7 GHz 2.5 WATT OUTPUT POWER General Description Typical Performance The HMC139 is a GaAs MMIC amplifier


    OCR Scan     		PDF HMC139 HMC139