RP8P Search Results

Contextual Info: 2SK2794 Silicon N-Channel MOS FET UHF Power Amplifier HITACHI Features • H igh power output, H ig h gain, H ig h e fficie n cy PG = 8.0dB, Pout = 3 ld B m , riD = 60 % m in. f = 8 36.5M H z • Com pact package capable o f surface m ounting Outline RP8P

Contextual Info: RENESAS Code PLSS0003ZA-A Previous Code RP8P / RP8PV MASS[Typ.] 0.08g 5.2 ± 0.15 2.54 ± 0.2 1.0 3.4 ± 0.15 1.1 1.325 ± 0.15 0.2 0.6 0.5 +0.1 –0.05 2.0 Max 4.5 Max +0.7 –0.5 JEITA Package Code ⎯ 5.6 Package Name RP8P 0.16 +0.1 –0.06 Unit: mm

Contextual Info: As of January, 2003 Unit: mm 5.2 ± 0.15 2.54 ± 0.2 1.0 3.4 ± 0.15 1.1 1.325 ± 0.15 0.2 0.16 +0.1 –0.06 0.6 0.5 +0.1 –0.05 2.0 Max 5.6 +0.7 –0.5 4.5 Max Package Code JEDEC JEITA Mass reference value RP8P — — 0.08 g

10SP10

Abstract: 126FM TSSOP-8 8d
Contextual Info: PACKAGE CODE SPAK TO-92 TO-92MOD SMPAK CMPAK CMPAK-4 MPAK MPAK-4 MPAK-5 MPAK-6 Ï I w MSP-18 TSSOP-14 id i * ^ UPAK RP8P TO-126FM I LDPAK- L DPAK(L) ^ FP-8DA TTP-8D (JEDEC SOP-8) (TSSOP-8) DPAK (§) f « ^ TO-126MOD ^ TQ-220AB TO-22QC • FM TO-22QFM I LDPAK-(S)

Contextual Info: 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier HITACHI 1st. Edition Features • High power output. High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm , r|D = 50 %min. f = 836.5M H z • Compact package capable o f surface mounting Outline RP8P

Contextual Info: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. f = 836 MHz • Compact package capable of surface mounting

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

VT1634AL

Abstract: tf041-th-pcb via vt1634al PCT303W PCT303A ad7 l59 16pin soic MITAC schematic 39-XI amilo schematic W83L950
Contextual Info: SERVICE MANUAL FOR 8650 BY: Sanny.Gao Repair Technology Research Department /EDVD November. 2005/R01 8650 N/B Maintenance Contents 1. Hardware Engineering Specification …………………………………………………………………. 4 1.1 Introduction …………………………………………………………………………………………………………… 4

2SK2595

Abstract: 2SK2595AXTB-E RP8P *0821
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK3390IXTB-E

Contextual Info: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. f = 836 MHz • Compact package capable of surface mounting

IC51-128

Abstract: transistor fpq 630 PC-68 TTP-48DF OF IC 7421 Enplas fpq Enplas PT740 AB am fm radio Hitachi DSAUTAZ005
Contextual Info: Hitachi Semiconductor Package Data Book Introduction Contents Section 1 Introduction of Packages 1.1 Types of Packages and Advantages 1.2 IC Package Name and Code Indication 1.3 Method of Indicating IC Package Dimensions 1.4 Lineups in Terms of Shapes and Materials

PF0131

Abstract: PF0141 PF0144 PF0145 PF0148 PFS 3000 PF0310A PF0049A PF0147 PF0040
Contextual Info: FET MODULE •High frequency amplifier Package Type No. cods RF-B2 PF0Q3Q PF0031 PF0032 PF0120 PF0121 PF0130 PF0131 PF0210 RF-B3 PF0040 PF0042 RF-E PFÓ02S PF0026 PF0027 PFQ04S PF0045A PF0047A PF0049A PFÖ065 PF0065A PF0O67A PF0144 PF0145 PF0146 PF0150 PF0231

HT 1200-4

Abstract: YAMAICHI ic234 PT740 AB TSSOP YAMAICHI SOCKET FP-20-0.65-01 IC51-1444-1354-7 PT817 Enplas drawings IC51-2084-1052-11 IC 7418 IC51-0242-1341
Contextual Info: Hitachi Semiconductor Package Data Book ADE–410–001B 3rd Edition March/97 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher functional

HT 1200-4

Abstract: IC51-2084-1052-11 IC51-0242-1341 YAMAICHI ic234 transistor fpq 630 IC51-0404-1511 fpq-144-0.5-03 648-0482211-A01 IC189 Series Open Top SOP, SSOP, TSOP Type I a HLQFP 176 Package drawing
Contextual Info: Hitachi Semiconductor Package Data Book ADE–410–001C 4th Edition March/98 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher

Hitachi DSA0076

Abstract: 2SK2595
Contextual Info: 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier ADE-208-1366 Z 1st. Edition Mar. 2001 Features • High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz) • Compact package capable of surface mounting

induction cooker fault finding diagrams

Abstract: induction cooker schematic diagram th 20594 JEDEC JESD22-B116 free datasheet transistor said horizontal tt 2222 8 PIN DIL 20594 JEDEC JESD22-B109 JESD22-B108A schematic diagram induction cooker induction cooker coil design
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PT740 AB

Abstract: PM351 transistor 9726 126 EDR-7313 ED-7402 texas instruments data guide manual Hitachi DSAUTAZ006 DO-35 land pattern Silicon Point Contact Mixer Diodes ED-7311
Contextual Info: Hitachi Semiconductor Package Data Book ADE–410–001H 9th Edition March/2001 Semiconductor & Integrated Circuits Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

5252 F 1108

Abstract: 4550J TO220FM 12015C 5252 F 1104 0345A msp18 E1113 K2613 SP1211
Contextual Info: B 2 S A series P 5 5 6 8 8 8 6 6 6 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 6 9 5 5 5 5 5 5 5 5 5 6 5 5 8 8 8 6 P*c*^aeoda TO-92 TO-92 TO-92 TO-126M TO-126M TO-126M TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92

SMD 8PIN IC MARKING CODE 251

Contextual Info: User’s Manual Renesas Semiconductor Package Mount Manual www.renesas.com Rev.2.00 Mar 2012 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please

Contextual Info: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only FOUR DIGIT LED DISPLAY 0.36 Inch Pb Lead-Free Parts LFD315/67FS-XX/RP8-PF DATA SHEET DOC. NO : QW0905- LFD315/67FS-XX/RP8-PF REV. : A DATE : 18 - Mar. - 2011 發行 立碁電子 DCC LIGITEK ELECTRONICS CO.,LTD.

2SK3390

Abstract: DSA003644
Contextual Info: 2SK3390 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-846 Z 1st. Edition Aug.2001 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd= 60 % min. (f = 836 MHz) • Compact package capable of surface mounting

Contextual Info: 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0206-0200Z Previous ADE-208-1366 (Z Rev.2.00 Apr.20.2004 Features • High power output, High gain, High efficiency PG = 7.8 dB, Pout = 37.3 dBm, ηD = 50%min. (f = 836.5 MHz) • Compact package capable of surface mounting

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing