RGS 14 Search Results

TPT-81A

Abstract: ITS-700 ACTTA-100A 8002 1030 Aeroflex RGS 2000
Contextual Info: Avionics RGS 2000 TCAS REPLY GENERATOR Your complete RF source for the testing of TCAS computers The RGS 2000 TCAS Reply Generator is a self-contained RF Test Station designed to be a complete RF resource for the testing of TCAS Traffic Alert and Collision Avoidance

varistor 1049

Abstract: RGS1A60D50KKEH51 RGS1A23D25KKEDIN RGS1A60D25KKE RGS1A23D50KKE varistor 471 2kv
Contextual Info: Solid State Relays Zero Switching Types RGS.E, RGS.EDIN • • • • • • • • • • • • • 17.5mm width Rated Operational voltage: Up to 600Vrms Rated Operational current: Up to 90Arms Up to 6600A²s for I²t Control voltages: 3-32 VDC, 20-275 VAC 24-190VDC

Contextual Info: NTE2384 MOSFET N–Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain–Gate Voltage RGS = 20kΩ , VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V

NTE2387

Contextual Info: NTE2387 MOSFET N–Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain–Gate Voltage RGS = 20kΩ , VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V

Contextual Info: Advanced Technical Information PolarHTTM HiPerFET IXFN 140N20P Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Fast Intrinsic Diode trr Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ

IXTK140N20P

Abstract: N-channel enhancement 70A
Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTK 140N20P VDSS ID25 RDS on = 200 V = 140 A Ω = 18 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25

140n10

Contextual Info: Advanced Technical Information IXTQ 140N10P IXTT 140N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = = 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω < 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

44N50P

Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω < 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

ixtk140n30p

Abstract: 250nsNOTE
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET IXTK140N30P VDSS ID25 = 300V = 140A Ω ≤ 24mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ

BC237

Abstract: 2N7000 Fet
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET VDSS ID25 IXTK140N30P = 300V = 140A Ω ≤ 24mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ

ixfn 140n30p

Contextual Info: PolarHVTM HiPerFET IXFN 140N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM

Contextual Info: IXTH 14N100 VDSS MegaMOSTMFET ID25 RDS on = 1000 V = 14 A = 0.82 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30

MPC8358

Abstract: FE2A "PPTP"
Contextual Info: Freescale Semiconductor Quick Start Guide Document Number: VQSSOHOQGS Rev. 0, 06/2009 VortiQa Software for SOHO/Residential Gateways on MPC8358 Quick Start Guide 1 Introduction Contents This document describes VortiQa RGS feature overview and steps to install fuse and bring-up

4525G

Abstract: 140N30P
Contextual Info: VDSS ID25 PolarHVTM HiPerFET IXFK 140N30P IXFX 140N30P Power MOSFET RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGSM VGSM Transient

Contextual Info: IXTQ44N50P PolarTM Power MOSFET VDSS ID25 RDS on = 500V = 44A   140m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-3P G D Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTA80N10T7 RDS on = 100 V = 80 A Ω ≤ 14 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: PolarHVTM HiPerFET IXFH 140N10P IXFT 140N10P Power MOSFETs VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100

140N1

Contextual Info: PolarHVTM HiPerFET IXFH 140N10P IXFT 140N10P Power MOSFETs VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100

ixfn 140n30p

Abstract: sot 227b diode fast UL 486 torque values 710 115 IXFN140N30P 123B16
Contextual Info: Preliminary Technical Information PolarHVTM HiPerFET IXFN 140N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ

2N3819 fet

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel Enhancement 2N7002LT1 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

Contextual Info: TrenchMVTM Power MOSFET VDSS ID25 IXTA80N10T IXTP80N10T RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ 100V 80A 14mΩ Ω TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ

VN0610LL

Contextual Info: ON Semiconductort FET Transistor VN0610LL N–Channel — Enhancement MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1 MΩ VDGR 60 Vdc Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs)