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    140N20P Search Results

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    IXYS Corporation IXFR140N20P

    MOSFET N-CH 200V 90A ISOPLUS247
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    DigiKey IXFR140N20P Tube 4,147 1
    • 1 $17.51
    • 10 $17.51
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    Mouser Electronics IXFR140N20P 140
    • 1 $17.17
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    Newark IXFR140N20P Bulk 1 1
    • 1 $17.17
    • 10 $16.14
    • 100 $14.09
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    TTI IXFR140N20P Tube 300
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    TME IXFR140N20P 1
    • 1 $17.46
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    New Advantage Corporation IXFR140N20P 24 1
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    Littelfuse Inc IXFN140N20P

    MOSFET N-CH 200V 115A SOT227B
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    DigiKey IXFN140N20P Tube 273 1
    • 1 $28.91
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    Newark IXFN140N20P Bulk 94 1
    • 1 $22.20
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    Littelfuse Inc IXFK140N20P

    MOSFET N-CH 200V 140A TO264AA
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    DigiKey IXFK140N20P Tube 1
    • 1 $11.72
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    Newark IXFK140N20P Bulk 300
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    IXYS Corporation IXTK140N20P

    MOSFET N-CH 200V 140A TO264
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    DigiKey IXTK140N20P Tube 1
    • 1 $16.87
    • 10 $16.87
    • 100 $11.50
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    Mouser Electronics IXTK140N20P 541
    • 1 $16.96
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    Newark IXTK140N20P Bulk 242 1
    • 1 $14.40
    • 10 $13.66
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    TTI IXTK140N20P Tube 300
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    TME IXTK140N20P 1
    • 1 $11.92
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    New Advantage Corporation IXTK140N20P 150 1
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    IXYS Corporation IXFN140N20P

    MOSFET Modules 140 Amps 200V 0.018 Rds
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    Mouser Electronics IXFN140N20P 263
    • 1 $29.23
    • 10 $21.48
    • 100 $18.47
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    TTI IXFN140N20P Tube 200 10
    • 1 -
    • 10 $21.16
    • 100 $18.03
    • 1000 $18.03
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    TME IXFN140N20P 1
    • 1 $28.21
    • 10 $23.10
    • 100 $23.10
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    New Advantage Corporation IXFN140N20P 39 1
    • 1 -
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    • 100 $52.85
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    140N20P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PolarHTTMHiPerFET Power MOSFET VDSS = 200 V ID25 = 140 A Ω RDS on ≤ 18 mΩ ≤ 200 ns trr IXFK 140N20P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		140N20P PDF

    140N20P

    Abstract: IXYS SP
    Contextual Info: Preliminary Technical Information PolarHTTMHiPerFET Power MOSFET VDSS = 200 V ID25 = 140 A Ω RDS on = 18 mΩ ≤ 150 ns trr IXFK 140N20P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original     		140N20P 405B2 140N20P IXYS SP PDF

    140N20P

    Abstract: IXfk 75 N 50 140N20
    Contextual Info: PolarHTTMHiPerFET Power MOSFET IXFK 140N20P VDSS = 200 V ID25 = 140 A Ω RDS on ≤ 18 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		140N20P 140N20P IXfk 75 N 50 140N20 PDF

    Contextual Info: Advance Technical Information PolarHTTM HiPerFET IXFR 140N20P Power MOSFET VDSS ID25 RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = 200 V = 90 A Ω = 22 mΩ ≤ 150 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions


    Original     		140N20P ISOPLUS247TM 140N20P PDF

    140N20

    Contextual Info: PolarHTTM Power MOSFET VDSS = 200 V ID25 = 140 A Ω RDS on ≤ 18 mΩ IXTK 140N20P N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 200 V V VGS VGSM


    Original     		140N20P 140N20 PDF

    Contextual Info: PolarHTTM HiPerFET IXFR 140N20P Power MOSFET VDSS = 200 V ID25 = 90 A RDS on ≤ 22 m Ω ≤ 200 ns trr ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		140N20P ISOPLUS247TM ISOPLUS247 E153432 PDF

    140N20P

    Abstract: 140N2 140N20
    Contextual Info: PolarHTTM HiPerFET IXFN 140N20P Power MOSFET VDSS = 200 V ID25 = 115 A Ω RDS on ≤ 18 mΩ ≤ 150 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		140N20P OT-227 E153432 01-23-06-B 140N20P 140N2 140N20 PDF

    ISOPLUS247

    Contextual Info: Advance Technical Information PolarHTTM HiPerFET IXFR 140N20P Power MOSFET VDSS = 200 V ID25 = 75 A Ω RDS on = 22 mΩ ≤ 150 ns trr ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated; Fast Intrinsic Diode Symbol


    Original     		140N20P ISOPLUS247TM 405B2 ISOPLUS247 PDF

    Contextual Info: Advanced Technical Information PolarHTTM HiPerFET IXFN 140N20P Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Fast Intrinsic Diode trr Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		140N20P PDF

    Contextual Info: PolarHTTM HiPerFET IXFN 140N20P Power MOSFET VDSS = 200 V ID25 = 115 A Ω RDS on ≤ 18 mΩ ≤ 150 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		140N20P 01-23-06-B PDF

    IXTK140N20P

    Abstract: N-channel enhancement 70A
    Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTK 140N20P VDSS ID25 RDS on = 200 V = 140 A Ω = 18 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25


    Original     		140N20P O-264 IXTK140N20P N-channel enhancement 70A PDF

    140N20

    Abstract: 140N2
    Contextual Info: PolarHTTM Power MOSFET IXTK 140N20P VDSS = 200 V ID25 = 140 A Ω RDS on ≤ 18 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 200 V V VGS VGSM Continuous Transient


    Original     		140N20P 140N20 140N2 PDF

    140N2

    Abstract: ISOPLUS247
    Contextual Info: PolarHTTM HiPerFET IXFR 140N20P Power MOSFET VDSS = 200 V ID25 = 90 A RDS on ≤ 22 m Ω ≤ 200 ns trr ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		140N20P ISOPLUS247TM 140N2 ISOPLUS247 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP PDF