140N2 Search Results
140N2 Result Highlights (3)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| HM2P95PDG140N2LF | Amphenol Communications Solutions | Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 8 Row vertical Press-Fit Header, Type DE with 156 Signal Pins and RoHS compatable | |||
| HM2P07PDT140N2LF | Amphenol Communications Solutions | Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 5 Row vertical Press-Fit Header, Type A with 110 Signal Pins and RoHS compatable | |||
| HM2P07PDE140N2LF | Amphenol Communications Solutions | Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 5 Row vertical Press-Fit Header, Type A with 110 Signal Pins and RoHS compatable |
140N2 Price and Stock
IXYS Corporation IXFH140N20X3Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3 |
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IXFH140N20X3 | 63 | 1 |
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IXFH140N20X3 | 159 |
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IXFH140N20X3 | Tube | 300 |
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IXYS Corporation IXFQ140N20X3Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFQ140N20X3 | 36 | 1 |
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IXFQ140N20X3 | Tube | 30 |
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IXFQ140N20X3 | 90 | 1 |
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IXYS Corporation IXFK140N25TTransistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFK140N25T | 1 |
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IXFK140N25T | Tube | 300 |
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IXYS Corporation IXFT140N20X3HVTransistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFT140N20X3HV | 1 |
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IXFT140N20X3HV | Tube | 300 |
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IXFT140N20X3HV | 144 | 1 |
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IXYS Corporation IXFZ140N25TTransistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXFZ140N25T | 1 |
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IXFZ140N25T | 16 | 1 |
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140N2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PolarHTTMHiPerFET Power MOSFET VDSS = 200 V ID25 = 140 A Ω RDS on ≤ 18 mΩ ≤ 200 ns trr IXFK 140N20P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ |
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140n20p | |
140N20P
Abstract: IXYS SP
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140n20p405b2ixys sp | |
140N20P
Abstract: IXfk 75 N 50 140N20
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140n20pixfk 75 n 50140n20 | |
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Contextual Info: Advance Technical Information PolarHTTM HiPerFET IXFR 140N20P Power MOSFET VDSS ID25 RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = 200 V = 90 A Ω = 22 mΩ ≤ 150 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions |
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140n20pisoplus247tm | |
140N20Contextual Info: PolarHTTM Power MOSFET VDSS = 200 V ID25 = 140 A Ω RDS on ≤ 18 mΩ IXTK 140N20P N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 200 V V VGS VGSM |
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140n20p140n20 | |
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Contextual Info: PolarHTTM HiPerFET IXFR 140N20P Power MOSFET VDSS = 200 V ID25 = 90 A RDS on ≤ 22 m Ω ≤ 200 ns trr ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings |
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140n20pisoplus247tmisoplus247e153432 | |
140N20P
Abstract: 140N2 140N20
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140n20pot-227e15343201-23-06-b+2 | |
ISOPLUS247Contextual Info: Advance Technical Information PolarHTTM HiPerFET IXFR 140N20P Power MOSFET VDSS = 200 V ID25 = 75 A Ω RDS on = 22 mΩ ≤ 150 ns trr ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated; Fast Intrinsic Diode Symbol |
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140n20pisoplus247tm405b2isoplus247 | |
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Contextual Info: Advanced Technical Information PolarHTTM HiPerFET IXFN 140N20P Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Fast Intrinsic Diode trr Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ |
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140n20p | |
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Contextual Info: PolarHTTM HiPerFET IXFN 140N20P Power MOSFET VDSS = 200 V ID25 = 115 A Ω RDS on ≤ 18 mΩ ≤ 150 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ |
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140n20p01-23-06-b | |
IXTK140N20P
Abstract: N-channel enhancement 70A
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140n20po-264ixtk140n20pn-channel enhancement 70a | |
140N20
Abstract: 140N2
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140n20p140n20140n2 | |
140N2
Abstract: ISOPLUS247
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140n20pisoplus247tm140n2isoplus247 | |
kta 3-25
Abstract: Allen-Bradley 100-M09 KTL-3-65-N Allen-Bradley Overload relay 140-MN-1600 Allen-Bradley cat 140-mn-0400 Allen-Bradley Overload relay 140-MN-0250 Allen-Bradley cat 140-mn-1000 140M-K5F-D12 140M-K5F-D16 kry 112 76 1
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140-mn140-cmn140m-k5f3-160s+14 | |
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Allen-Bradley cat 140-mn-0400
Abstract: Allen-Bradley cat 140-mn-1000 140-MN-0250 140-MN-1000 140-MN-0400 Allen-Bradley cat 140-mn-0100 Allen-Bradley cat 140-mn-0160 140-MN-1600 140-MN-0160 140-MN-0630
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OCR Scan |
allen-bradley cat 140-mn-0400allen-bradley cat 140-mn-1000140-mn-0250140-mn-1000+6 | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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ms-01310-pin5m-1994mo-229+10 | |
DIODE 1334
Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
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110n055p-5s75n10p-5s110n10p-6s140n10p-7s+15 | |