Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    140N20 Search Results

    SF Impression Pixel

    140N20 Price and Stock

    IXYS Corporation

    IXYS Corporation IXFH140N20X3

    Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXFH140N20X3 63 1
    • 1 $13.38
    • 10 $9.22
    • 100 $8.79
    • 1000 $8.79
    • 10000 $8.79
    Buy Now
    Mouser Electronics IXFH140N20X3 159
    • 1 $19.36
    • 10 $12.79
    • 100 $12.79
    • 1000 $10.23
    • 10000 $10.23
    Buy Now
    TTI IXFH140N20X3 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $10.34
    • 10000 $10.34
    Buy Now

    IXYS Corporation IXFQ140N20X3

    Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXFQ140N20X3 36 1
    • 1 $11.43
    • 10 $9.09
    • 100 $8.48
    • 1000 $8.48
    • 10000 $8.48
    Buy Now
    TTI IXFQ140N20X3 Tube 30
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now
    Bristol Electronics IXFQ140N20X3 90 1
    • 1 $9.36
    • 10 $7.49
    • 100 $6.83
    • 1000 $6.83
    • 10000 $6.83
    Buy Now

    IXYS Corporation IXFT140N20X3HV

    Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXFT140N20X3HV 1
    • 1 $13.54
    • 10 $10.82
    • 100 $10.10
    • 1000 $10.10
    • 10000 $10.10
    Get Quote
    Mouser Electronics IXFT140N20X3HV
    • 1 -
    • 10 -
    • 100 -
    • 1000 $11.87
    • 10000 $11.87
    Get Quote
    TTI IXFT140N20X3HV Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $10.49
    • 10000 $10.49
    Buy Now
    Bristol Electronics IXFT140N20X3HV 144 1
    • 1 $8.81
    • 10 $7.05
    • 100 $6.17
    • 1000 $6.17
    • 10000 $6.17
    Buy Now

    IXYS Corporation IXFN140N20P

    Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXFN140N20P 1
    • 1 $29.23
    • 10 $23.18
    • 100 $20.57
    • 1000 $20.57
    • 10000 $20.57
    Get Quote
    Mouser Electronics IXFN140N20P 371
    • 1 $34.58
    • 10 $24.13
    • 100 $24.13
    • 1000 $24.13
    • 10000 $24.13
    Buy Now
    Newark IXFN140N20P Bulk 443 1
    • 1 $32.63
    • 10 $30.96
    • 100 $29.26
    • 1000 $25.68
    • 10000 $24.32
    Buy Now
    TTI IXFN140N20P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $21.98
    • 10000 $21.98
    Buy Now

    IXYS Corporation IXFR140N20P

    Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXFR140N20P 1
    • 1 $22.43
    • 10 $16.82
    • 100 $12.81
    • 1000 $12.20
    • 10000 $12.20
    Get Quote
    Mouser Electronics IXFR140N20P 195
    • 1 $24.84
    • 10 $18.29
    • 100 $18.29
    • 1000 $14.35
    • 10000 $14.35
    Buy Now
    Newark IXFR140N20P Bulk 270 1
    • 1 $29.71
    • 10 $24.71
    • 100 $19.70
    • 1000 $18.47
    • 10000 $17.73
    Buy Now

    140N20 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PolarHTTMHiPerFET Power MOSFET VDSS = 200 V ID25 = 140 A Ω RDS on ≤ 18 mΩ ≤ 200 ns trr IXFK 140N20P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original
    140n20p PDF

    140N20P

    Abstract: IXYS SP
    Contextual Info: Preliminary Technical Information PolarHTTMHiPerFET Power MOSFET VDSS = 200 V ID25 = 140 A Ω RDS on = 18 mΩ ≤ 150 ns trr IXFK 140N20P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original
    140n20p405b2ixys sp PDF

    140N20P

    Abstract: IXfk 75 N 50 140N20
    Contextual Info: PolarHTTMHiPerFET Power MOSFET IXFK 140N20P VDSS = 200 V ID25 = 140 A Ω RDS on ≤ 18 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original
    140n20pixfk 75 n 50140n20 PDF

    Contextual Info: Advance Technical Information PolarHTTM HiPerFET IXFR 140N20P Power MOSFET VDSS ID25 RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = 200 V = 90 A Ω = 22 mΩ ≤ 150 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions


    Original
    140n20pisoplus247tm PDF

    140N20

    Contextual Info: PolarHTTM Power MOSFET VDSS = 200 V ID25 = 140 A Ω RDS on ≤ 18 mΩ IXTK 140N20P N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 200 V V VGS VGSM


    Original
    140n20p140n20 PDF

    Contextual Info: PolarHTTM HiPerFET IXFR 140N20P Power MOSFET VDSS = 200 V ID25 = 90 A RDS on ≤ 22 m Ω ≤ 200 ns trr ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original
    140n20pisoplus247tmisoplus247e153432 PDF

    140N20P

    Abstract: 140N2 140N20
    Contextual Info: PolarHTTM HiPerFET IXFN 140N20P Power MOSFET VDSS = 200 V ID25 = 115 A Ω RDS on ≤ 18 mΩ ≤ 150 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original
    140n20pot-227e15343201-23-06-b+2140n2140n20 PDF

    ISOPLUS247

    Contextual Info: Advance Technical Information PolarHTTM HiPerFET IXFR 140N20P Power MOSFET VDSS = 200 V ID25 = 75 A Ω RDS on = 22 mΩ ≤ 150 ns trr ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated; Fast Intrinsic Diode Symbol


    Original
    140n20pisoplus247tm405b2isoplus247 PDF

    Contextual Info: Advanced Technical Information PolarHTTM HiPerFET IXFN 140N20P Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Fast Intrinsic Diode trr Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original
    140n20p PDF

    Contextual Info: PolarHTTM HiPerFET IXFN 140N20P Power MOSFET VDSS = 200 V ID25 = 115 A Ω RDS on ≤ 18 mΩ ≤ 150 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original
    140n20p01-23-06-b PDF

    IXTK140N20P

    Abstract: N-channel enhancement 70A
    Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTK 140N20P VDSS ID25 RDS on = 200 V = 140 A Ω = 18 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25


    Original
    140n20po-264ixtk140n20pn-channel enhancement 70a PDF

    140N20

    Abstract: 140N2
    Contextual Info: PolarHTTM Power MOSFET IXTK 140N20P VDSS = 200 V ID25 = 140 A Ω RDS on ≤ 18 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 200 V V VGS VGSM Continuous Transient


    Original
    140n20p140n20140n2 PDF

    140N2

    Abstract: ISOPLUS247
    Contextual Info: PolarHTTM HiPerFET IXFR 140N20P Power MOSFET VDSS = 200 V ID25 = 90 A RDS on ≤ 22 m Ω ≤ 200 ns trr ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original
    140n20pisoplus247tm140n2isoplus247 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original
    ixtd08n100p-1aixtq22n60pixfh20n80pdws20-200a+6ixfh24n80pixfk180n15pixtq22n50pdwhp16-12ixgh64n60a3ixfb50n80q2 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original
    110n055p-5s75n10p-5s110n10p-6s140n10p-7s+15170n10p-8s200n10p-8862n15p-5s96n15p-6s120n15p-7s150n15p-8sdiode 13341334 diode96n2036n30p equivalent88n30100n25p36n30ixtp75n10pixtp ixtp ixtp ixtp PDF