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    140N20P Price and Stock

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    IXYS Corporation IXFN140N20P

    Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXFN140N20P 1
    • 1 $29.23
    • 10 $23.18
    • 100 $20.57
    • 1000 $20.57
    • 10000 $20.57
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    Mouser Electronics IXFN140N20P 371
    • 1 $34.58
    • 10 $24.13
    • 100 $24.13
    • 1000 $24.13
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    Newark IXFN140N20P Bulk 443 1
    • 1 $32.63
    • 10 $30.96
    • 100 $29.26
    • 1000 $25.68
    • 10000 $24.32
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    TTI IXFN140N20P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $21.98
    • 10000 $21.98
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    IXYS Corporation IXFR140N20P

    Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
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    TME IXFR140N20P 1
    • 1 $22.43
    • 10 $16.82
    • 100 $12.81
    • 1000 $12.20
    • 10000 $12.20
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    Mouser Electronics IXFR140N20P 195
    • 1 $24.84
    • 10 $18.29
    • 100 $18.29
    • 1000 $14.35
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    Newark IXFR140N20P Bulk 270 1
    • 1 $29.71
    • 10 $24.71
    • 100 $19.70
    • 1000 $18.47
    • 10000 $17.73
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    IXYS Corporation IXFK140N20P

    Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
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    TME IXFK140N20P 1
    • 1 $13.41
    • 10 $13.41
    • 100 $12.06
    • 1000 $12.06
    • 10000 $12.06
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    Mouser Electronics IXFK140N20P 284
    • 1 $20.54
    • 10 $12.26
    • 100 $12.26
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    TTI IXFK140N20P Tube 25
    • 1 -
    • 10 -
    • 100 $12.85
    • 1000 $12.85
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    IXYS Corporation IXTK140N20P

    Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
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    TME IXTK140N20P 1
    • 1 $18.00
    • 10 $18.00
    • 100 $10.68
    • 1000 $10.49
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    Mouser Electronics IXTK140N20P 675
    • 1 $20.91
    • 10 $15.62
    • 100 $13.50
    • 1000 $12.78
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    Newark IXTK140N20P Bulk 441 1
    • 1 $20.91
    • 10 $14.29
    • 100 $13.33
    • 1000 $11.96
    • 10000 $11.48
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    TTI IXTK140N20P Tube 300
    • 1 -
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    • 100 -
    • 1000 $12.08
    • 10000 $12.08
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    Littelfuse Inc IXFN140N20P

    Mosfet, N-Ch, 200V, 140A, Isotop; Channel Type:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:200V; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:680W; Product Range:- Rohs Compliant: Yes
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXFN140N20P Bulk 16 1
    • 1 $38.79
    • 10 $28.59
    • 100 $23.26
    • 1000 $22.33
    • 10000 $22.33
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    RS IXFN140N20P Bulk 8 Weeks 10
    • 1 -
    • 10 $34.42
    • 100 $34.42
    • 1000 $34.42
    • 10000 $34.42
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    Find more 140N20P price and stock on Findchips.com

    140N20P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PolarHTTMHiPerFET Power MOSFET VDSS = 200 V ID25 = 140 A Ω RDS on ≤ 18 mΩ ≤ 200 ns trr IXFK 140N20P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		140n20p PDF

    140N20P

    Abstract: IXYS SP
    Contextual Info: Preliminary Technical Information PolarHTTMHiPerFET Power MOSFET VDSS = 200 V ID25 = 140 A Ω RDS on = 18 mΩ ≤ 150 ns trr IXFK 140N20P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original     		140n20p405b2ixys sp PDF

    140N20P

    Abstract: IXfk 75 N 50 140N20
    Contextual Info: PolarHTTMHiPerFET Power MOSFET IXFK 140N20P VDSS = 200 V ID25 = 140 A Ω RDS on ≤ 18 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		140n20pixfk 75 n 50140n20 PDF

    Contextual Info: Advance Technical Information PolarHTTM HiPerFET IXFR 140N20P Power MOSFET VDSS ID25 RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = 200 V = 90 A Ω = 22 mΩ ≤ 150 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions


    Original     		140n20pisoplus247tm PDF

    140N20

    Contextual Info: PolarHTTM Power MOSFET VDSS = 200 V ID25 = 140 A Ω RDS on ≤ 18 mΩ IXTK 140N20P N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 200 V V VGS VGSM


    Original     		140n20p140n20 PDF

    Contextual Info: PolarHTTM HiPerFET IXFR 140N20P Power MOSFET VDSS = 200 V ID25 = 90 A RDS on ≤ 22 m Ω ≤ 200 ns trr ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		140n20pisoplus247tmisoplus247e153432 PDF

    140N20P

    Abstract: 140N2 140N20
    Contextual Info: PolarHTTM HiPerFET IXFN 140N20P Power MOSFET VDSS = 200 V ID25 = 115 A Ω RDS on ≤ 18 mΩ ≤ 150 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		140n20pot-227e15343201-23-06-b+2140n2140n20 PDF

    ISOPLUS247

    Contextual Info: Advance Technical Information PolarHTTM HiPerFET IXFR 140N20P Power MOSFET VDSS = 200 V ID25 = 75 A Ω RDS on = 22 mΩ ≤ 150 ns trr ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated; Fast Intrinsic Diode Symbol


    Original     		140n20pisoplus247tm405b2isoplus247 PDF

    Contextual Info: Advanced Technical Information PolarHTTM HiPerFET IXFN 140N20P Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Fast Intrinsic Diode trr Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		140n20p PDF

    Contextual Info: PolarHTTM HiPerFET IXFN 140N20P Power MOSFET VDSS = 200 V ID25 = 115 A Ω RDS on ≤ 18 mΩ ≤ 150 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		140n20p01-23-06-b PDF

    IXTK140N20P

    Abstract: N-channel enhancement 70A
    Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTK 140N20P VDSS ID25 RDS on = 200 V = 140 A Ω = 18 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25


    Original     		140n20po-264ixtk140n20pn-channel enhancement 70a PDF

    140N20

    Abstract: 140N2
    Contextual Info: PolarHTTM Power MOSFET IXTK 140N20P VDSS = 200 V ID25 = 140 A Ω RDS on ≤ 18 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 200 V V VGS VGSM Continuous Transient


    Original     		140n20p140n20140n2 PDF

    140N2

    Abstract: ISOPLUS247
    Contextual Info: PolarHTTM HiPerFET IXFR 140N20P Power MOSFET VDSS = 200 V ID25 = 90 A RDS on ≤ 22 m Ω ≤ 200 ns trr ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		140n20pisoplus247tm140n2isoplus247 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		ixtd08n100p-1aixtq22n60pixfh20n80pdws20-200a+6ixfh24n80pixfk180n15pixtq22n50pdwhp16-12ixgh64n60a3ixfb50n80q2 PDF

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		110n055p-5s75n10p-5s110n10p-6s140n10p-7s+15170n10p-8s200n10p-8862n15p-5s96n15p-6s120n15p-7s150n15p-8sdiode 13341334 diode96n2036n30p equivalent88n30100n25p36n30ixtp75n10pixtp ixtp ixtp ixtp PDF