RFPOWER FET Search Results

800w rf power amplifier circuit diagram

Abstract: MRF6VP11KH 1000w power amplifier circuit diagram 200W PUSH-PULL 1000w power AMPLIFIER pcb circuit amplifier circuit diagram class D 1000w 500w FM power amplifier circuit diagram MRFE6VP6300H RF Amplifier 500w 175 mhz 1000w class d circuit diagram schematics
Contextual Info: White Paper 50V RF LDMOS An ideal RF Power technology for ISM, broadcast and commercial aerospace applications Freescale Semiconductor www.freescale.com/rfpower I. INTRODUCTION RF LDMOS RF Laterally Diffused MOS , hereafter referred to as LDMOS, is the dominant device technology used in

Contextual Info: PTF 10123* PRELIMINARY GOLDMOS Field Effect Transistor 5 Watts, 2.1–2.2 GHz Description The 10123 is a GOLDMOS FET intended for large signal applications from 2.1 to 2.2 GHz. It operates with 47% efficiency and 11 db minimum gain. Nitride surface passivation and gold metallization ensure

PTF080601

Abstract: PTF080601A PTF080601E PTF080601F 30248
Contextual Info: Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description Features The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

Contextual Info: PRELIMINARY PTF 102001* 75 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 102001 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It operates with 13 dB minimum gain. Nitride surface passivation and full gold metallization

E101 FET

Abstract: transistor E101
Contextual Info: PRELIMINARY PTF 10160* 85 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description • • The 10160 is an input and output matched 85 watt LDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. This device operates at 53% efficiency with 15 dB of gain minimum. Full

PTFA211001E

Contextual Info: Product Brief PTFA211001E PTFA211001F WCDMA RF Power FET The PTFA211001E and PTFA211001F Performance Two devices from our next generation of GOLDMOS devices, these high-gain devices bring rugged quality to your amplifier designs. Specifically optimized for WCDMA applications, the PTFA211001E and

PTFA211801E

Abstract: PTFA211801F
Contextual Info: Product Brief PTFA211801E PTFA211801F WCDMA RF Power FET The PTFA211801E and PTFA211801F Performance Two devices from our next generation of GOLDMOS devices, these high-gain devices bring rugged quality to your amplifier designs. Specifically optimized for WCDMA applications, the PTFA211801E and

PTF102004

Abstract: 16AF
Contextual Info: PRELIMINARY PTF 102004* 120 Watts, 2.1–2.2 GHz GOLDMOS FET Description The PTF 102004 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 120 watts power output and 13 dB gain. Nitride surface passivation and full gold

PTFA142401EL

Abstract: 33288 PTFA142401FL DVB-T acpr H-33288-2
Contextual Info: Preliminary PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz Description The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz

Contextual Info: GOLDMOS PTF 10119 Field Effect Transistor 12 Watts, 2.1–2.2 GHz Description The PTF 10119 is a 12–watt GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It operates at 43% efficiency with 11 dB typical gain. Nitride surface passivation and full gold metallization

Contextual Info: Product Brief PTFA180801E PTFA180801F GSM/EDGE RF Power FET The PTFA180801E and PTFA180801F Performance Two devices from our next generation of thermally enhanced GOLDMOS devices, these high-gain transistors bring rugged quality to your amplifier designs. Specifically optimized for GSM/EDGE applications,

SEK4

Contextual Info: PTFC262808FV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808FV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with

GS 9425

Abstract: PTFA092211EL PTFA092211FL package tray design dwg
Contextual Info: Preliminary PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications

Contextual Info: PTFC262808FV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808FV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with

Contextual Info: PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output

siemens ma

Contextual Info: PRELIMINARY PTF 10065* 30 Watts, 1.9–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10065 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts power output and has 11 dB gain. Nitride surface passivation

PTFC262808SV

Contextual Info: PTFC262808SV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808SV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with

TL205

Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's

Contextual Info: PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz Description The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features

Contextual Info: PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Description The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency

Contextual Info: PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 – 2690 MHz Description The PXAC261002FC is a 100-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features

Contextual Info: PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's

Contextual Info: PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's

ATC100B4R3CW500X

Abstract: PTVA035002EV V1
Contextual Info: PTVA035002EV Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down