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    PTF080601A Search Results

    PTF080601A Datasheets (1)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PTF080601A
    		Infineon Technologies LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz Original PDF 293.24KB 6

    PTF080601A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PTF080601

    Abstract: PTF080601A PTF080601E PTF080601F 30248
    Contextual Info: Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description Features The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		ptf080601ptf080601aptf080601eptf080601f+130248 PDF

    BCP56

    Abstract: LM7805 PTF080601E PTF080601F transistor smd marking NE
    Contextual Info: PTF080601E PTF080601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 860 – 960 MHz Description PTF080601E Package 30265 The PTF080601E and PTF080601F are 60-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 860 to 960 MHz band. Thermally-enhanced packaging provides the coolest operation possible. Full gold metallization ensures excellent device lifetime


    Original     		ptf080601eptf080601f60-wattbcp56+2lm7805transistor smd marking ne PDF