30248 Search Results

Contextual Info: Extract from the online catalog FBSTB 5-4 This product has been replaced by a newer version. Order No.: 3024847 Bridge, 5-pos. Commercial data EAN 4017918162962 Pack 10 Pcs. Customs tariff

Contextual Info: Extract from the online catalog FBSTB 6-4 This product has been replaced by a newer version. Order No.: 3024850 Bridge, 6-pos. Commercial data EAN 4017918162979 Pack 10 Pcs. Customs tariff

Contextual Info: Extract from the online catalog FBSTB 9-4 This product has been replaced by a newer version. Order No.: 3024889 Bridge, 9-pos. Commercial data EAN 4017918163006 Pack 10 Pcs. Customs tariff

F16KQ50S

Abstract: F16KQ50SB F16KQ60S F16KQ60SB
Contextual Info: SCHOTTKY BARRIER DIODE F16KQ50S F16KQ60S F16KQ50SB F16KQ60SB 16.6A/50— 60V 3.1 .122> MAX u_10.3{.405 _ M AX 4.8U 89) f*M AX FEATU RES 3.41.134)^ ° S i m i l a r to T 0 - 2 2 0 A C and T 0 - 2 2 0 A B Case Fully Molded Isolation T 6.9(,272) 6-30248) I 2.85(.112)

Contextual Info: »21 RAD I A LL TECHNICAL DATA SHEET 5 0 0 TERMINATED OPTIONS yBCD DECODER 3 GHz N/0 SMA R 5 7 4 302485 S.P.4T. Page SWITCH 112 /SUPP.DIODES R F CHARACTERISTICS NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE 4 0 - 3 GHz 50 Ohms make to V.S.W.R right INSERT. LOSS <=

Contextual Info: Extract from the online catalog FBSTB 4-4 This product has been replaced by a newer version. Order No.: 3024834 Bridge, 4-pos. Commercial data EAN 4017918162955 Pack 10 Pcs. Customs tariff

Contextual Info: RAD I ALL Microwave components 3 GHz TECHNICAL DATA SHEET N/0 SMA R 5 7 3 302485 S.P.4T. Page 112 SWITCH OPTIONS : /BCD DECODER /SUPP.DIODES R F CHARACTERISTICS | 4 0 - 3 GHz 50 Ohms INUMdth Ul- WATO FREQUENCY RANGE IMPEDANCE FREQUENCY GHz | 0 V.S.W.R

Contextual Info: Extract from the online catalog FBSTB 8-4 This product has been replaced by a newer version. Order No.: 3024876 Bridge, 8-pos. Commercial data EAN 4017918162993 Pack 10 Pcs. Customs tariff

Contextual Info: Extract from the online catalog FBSTB 10-4 This product has been replaced by a newer version. Order No.: 3024892 Bridge, 10-pos. Commercial data EAN 4017918163013 Pack 10 Pcs.

85369010

Contextual Info: Extract from the online catalog FBSTB 7-4 This product has been replaced by a newer version. Order No.: 3024863 Bridge, 7-pos. Commercial data EAN 4017918162986 Pack 10 Pcs. Customs tariff

Contextual Info: THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO POSITRONICAND IT'S SUBSIDIARIES. POSITRONIC BELIEVES THE DATA ON THIS DRAWING TO BE RELIABLE, SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE R EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION AND RISK. POSITRONIC ASSUMES NO RESPONSIBILITY FOR

HAT1058C

Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,

schematic 20 pin lcd laptop

Abstract: "ESD Diode" FAJ ESD laptop LCD SCHEMATIC 2CFA-330/221M-Q20R 3,3K FAJ 20 ESD 20 pin lcd laptop schematic 20 pin lcd laptop 14 2DTA-5-Q24RLF
Contextual Info: Bourns Integrated Passive & Active Devices Short Form Catalog Thin Film On Silicon Products Bourns can now provide designers with an integrated passive & active device solution that saves PCB real estate while offering remarkable electrical performance. The designers of compact

LM7805 smd

Abstract: BCP56 LM7805 PTF081301E PTF081301F transistor SMD LOA DD 127 D TRANSISTOR
Contextual Info: PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest

HT12E HT12D

Abstract: Panasonic RELAY Cross Reference NEC OMRON N80C196KC16 MOS248 TDA2086A GOULD 500 COLOUR LCD DIGITAL STORAGE OSCILLOSCOPE 1NA114AP ICM72171 SL443A nec matrix Vacuum tube display
Contextual Info: Issued July 1996 021-928 Data Packs A-K RS data sheet/semiconductor manufacturers data sheet index Data Sheet Introduction RS data sheets form a unique source of detailed information regarding technical specifications, absolute maximum ratings and applications for engineers and designers working with RS products.

CW 7805

Abstract: CW 7805 regulator regulator CW 7805 P10ECT-ND CW 7805 1k 7805 datasheet ptf21090 TRANSISTOR CW 7805 resistor* 24k ohm PCC1772CT-ND
Contextual Info: PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description Features The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

xapx2

Abstract: canton AS 65 SC service manual canton AS 50 SC service manual 7AM038 canton AS 105 SC service manual YS11A105B-026 - YS11
Contextual Info: Introduction to Thermtrol Table of Contents www.thermtrol.com E-mail: sales@thermtrol.com Motor Protectors: SH7AM - Self hold motor, transformer, appliance protection 7AM - Motor, lighting, transformer, appliance protection SX8AM - High locked rotor current self hold motor protection

20051201

Contextual Info: Preliminary PTFA191401E PTFA191401F Thermally-Enhanced High Power RF LDMOS FETs 140 W, 1930 – 1990 MHz Description The PTFA191401E and PTFA191401F are thermally-enhanced, 140-watt, internally matched GOLDMOS FETs intended for WCDMA and CDMA applications. They are characaterized for single- and

Contextual Info: PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for CDMA and

d 417 transistor

Contextual Info: PTFA211001E PTFA211001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 2110 – 2170 MHz Description The PTFA211001E and PTFA211001F are thermally-enhanced, 100-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier

ssy 1920

Abstract: LM7805 SSY C5
Contextual Info: PTFA191001E PTFA191001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched GOLDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

DIN 8140 M4

Abstract: Norgren SM 55 NORGREN QM NORGREN sM
Contextual Info: RM/28000, RM/28000/M RM/28500, RM/28500/M Pneumatic Cylinders ISO 6432 Non-magnetic and Magnetic, Single Acting ∅ 10 to 25 mm ● Central rear port option ● Threaded rear end covers incorporate an integral eye mounting ● Synthetic rubber buffers reduce end of stroke

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.