RFPE Search Results

128064

Abstract: tl 8903
Contextual Info: LM X 2330L,LM X 2331 L,L M X 2 33 2L LMX2330L/LMX2331L/LMX2332L PLLatinum Low Power Dual Frequency Synthesizer for RFPersonal Communications LMX2330L 2.5 GHz/510 MHz, LMX2331L 2.0 GHz/510 MHz,LMX2332L 1.2 GHz/510 MHz Texa s In s t r u m e n t s Literature Number: SNAS111B

Contextual Info: LMX2330L,LMX2331L,LMX2332L LMX2330L/LMX2331L/LMX2332L PLLatinum Low Power Dual Frequency Synthesizer for RFPersonal Communications LMX2330L 2.5 GHz/510 MHz, LMX2331L 2.0 GHz/510 MHz,LMX2332L 1.2 GHz/510 MHz Literature Number: SNAS111B OBSOLETE July 11, 2011

XPOSYS

Abstract: gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb
Contextual Info: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

LG color tv Circuit Diagram schematics

Abstract: MD 1803 FX MN102L35G 27C202 eprom 711S SERVICE MANUAL Panasonic Panasonic color television schematic diagram ls010 lg led tv internal parts block diagram LG 631 TV LG
Contextual Info: P a n iB r i n g i n g a X S ‘l o m o T r o z v MICROCOMPUTER MN102L35G LSI User Manual Ver. 2.20 March 6, 1998 Panasonic • ^ 3 2 6 5 2 0016705 273 ■ This Material Copyrighted By Its Respective Manufacturer e rie s t o ‘T o d a y Restrictions and Warnings Regarding the Use of the Technical Data and the

Contextual Info: TOSHIBA MI C RO WA V E P O W E R GaAs FET M IC RO WA VE SEMICONDUCTOR T E C H N I C A L DATA S9G77A FEATURES : • HI GH ■ PARTIALLY MATCHED POWER P idB = 33.0 dBm at 3 .7 G H z ■ HI GH ■HERMETI CALLY GAI N SEALED PACKAGE G 1dB = 10.5 dB at 3 .7 G H z

K745

Abstract: PCS1900 TQD714006 TQD764022 TQM7M4022 W9-081 PAA 725
Contextual Info: TQD764022 Preliminary Data Sheet DCS/PCS Power Amplifier Die Functional Block Diagram Vcon Vcon Vcc1 Vcc2 Features Vcc2 • • • • W90815 PAA Bias circuitry Input match ESD protection RFout DCS/PCS ESD protection RFin DCS/PCS High Efficiency 50 Ω input and output impedances

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Contextual Info: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K

Contextual Info: Product Description SPA-1318 Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

WiFi LDPC

Abstract: 802.11n transmitter atheros LDPC LDPC Codes wi-fi transmitter 2.4 atheros Transmit Beamforming ZF steering wi-fi transmitter 2x2 MIMO ldpc decoder
Contextual Info: Achieving Higher Throughput and Greater Range in 802.11n Networks by Sustaining Signals for Improved Performance and Reliability At h e r o s w h i t e P ap e r – P u b l ic at io n Dat e 1 2 / 2 0 0 9 A b stra c t This whitepaper introduces engineers and managers to the key technical issues associated with

Contextual Info: EM MICROELECTRONIC - MARIN SA EM9201 Fully integrated, low power 2.4 GHz Transceiver Description EM9201 is a low-voltage 2.4GHz transceiver IC with built-in link-layer logic suitable for proprietary wireless links in the 2.400 … 2.4835 GHz ISM band. EM9201 features a radio core with a low-IF architecture

abb fox 6

Abstract: ALG circuit breaker
Contextual Info: Relion Protection and control 650 series IEC 61850 Communication Protocol Manual Document ID: 1MRK 511 242-UEN Issued: February 2011 Revision: Product version: 1.1 Copyright 2011 ABB. All rights reserved Copyright This document and parts thereof must not be reproduced or copied without written

Contextual Info: STLBC01 Bluetooth low energy controller Datasheet - production data Applications • Watches VFQFPN 24L • Fitness, wellness and sports • Consumer medical • Security/proximity Features • Remote control • Bluetooth specification v4.0 compliant master

Contextual Info: TECHNICAL DATA SHEET Mini-Coax 4 CHANNEL BLOCK STRAIGHT MF2C117-40ML5-NM *A wide variety of transmissionline topologies and pcb-parameters like permittivity, substrate thickness, and board-stackup are applied by customers. These parameters have a strong impact on the high frequency performance of the mounted connector.

Contextual Info: TECHNICAL DATA SHEET Mini-Coax 8 CHANNEL BLOCK STRAIGHT MF2C118-40ML5-NM *A wide variety of transmissionline topologies and pcb-parameters like permittivity, substrate thickness, and board-stackup are applied by customers. These parameters have a strong impact on the high frequency performance of the mounted connector.

B0050B

Abstract: b0050
Contextual Info: TECHNICAL DATA SHEET Mini-Coax 8 CHANNEL BLOCK RIGHT ANGLE 23C21D-40ML5 *A wide variety of transmissionline topologies and pcb-parameters like permittivity, substrate thickness, and board-stackup are applied by customers. These parameters have a strong impact on the high frequency performance of the mounted connector.

SSO24

Abstract: stabiliser circuit diagram S11B VHF-UHF Band oscillator BA282 BB515 BB620 S11A U2326B U2326B-AFSG3
Contextual Info: U2326B VHF/ UHF-Tuner-IC Description This tuner IC requires a power supply of 9 V and performs the function of two separate oscillators and mixers, SAWF-driver, LO output and two-state band switch. Together with the Easy Link PLL U6220B economical 9 V tuner with excellent RF-performance can be build.

TIM3536-60

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM 3536-60 FEATURES : •HIGH POWER ■ P1dB=48dBm ■ HIGH at 3 . 5 GH z to ■ at 3 . 5 GH z to HERMETICALLY ELECTRICAL CHARACTERISTICS PACKAGE > > CO o Il II Z Û Ul MIN. 47.0 TYP.

UV emitting diode 200 nm

Abstract: recloser sgm switch SMS module datasheet fox 515 abb HB relay DIODE bfp 86 abb fox 6
Contextual Info: 3URWHFW,7 /LQH GLVWDQFH SURWHFWLRQ WHUPLQDO 5 /   1MRK 506 169-BEN Page 1 Revision: A Issued: October 2003 Data subject to change without notice HDWXUHV • Open terminal with extensive configuration possibilities and expandable hardware design to meet specific user requirements

MCH18

Abstract: MCR03 SPA-1318 TAJB106K020R
Contextual Info: Product Description SPA-1318 This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 2150 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. 2150 MHz 1 Watt Power Amplifier

mcp60221

Abstract: IND-AIR-10-00189-500V-PTH UMSH-3112JNV-1G FAIRCHILD 1n5819 SMD diode Zener 5.1V UNITED RADIANT UMSH-3112JNV-1G yageo 1206 smd 1N5819 smd diode buzzer CC 1206 smd diode B3 SOT23
Contextual Info: AN1024 使用 PIC16F639 的 PKE 系统设计 作者： Youbok Lee, Ph.D. Microchip Technology Inc. 引言 免持式被动无钥门禁 （Passive Keyless Entry， PKE） 正迅速成为汽车远程无钥门禁应用的主流，并成为新型 汽车的普遍选择。使用该系统时，无需用手按发送器按

Contextual Info: BFP840ESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

Contextual Info: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

Contextual Info: BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.0, 2012-01-30 RF & Protection Devices Edition 2012-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BFP720ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.