S11A Search Results

jc 817

Abstract: ir 0588 0588 N1H1
Contextual Info: niCRON SEMICONDUCTOR INC b?E hi 1 1 5 ^ D 000^7^3 MRN S11A I 128K X 9 SRAM DIE | M IC R O N SEMICONDUCTOR tSC M 073 • SRAM DIE 128K X 9 SRAM Asynchronous S11A and Synchronous (S11A) GENERAL PHYSICAL SPECIFICATIONS • Wafer thickness = 18.5 mils ±0.5 mils

Contextual Info: AH420 4W High Linearity InGaP HBT Amplifier Product Features Functional Diagram Product Description • 400 – 2700 MHz The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with -49 dBc ACLR and +35.7

pseudomorphic HEMT

Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
Contextual Info: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm

FPD750SOT89

Abstract: BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E
Contextual Info: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

0603 footprint IPC

Abstract: FPD3000 TRANSISTOR BC 157 FPD3000SOT89 FPD3000SOT89E
Contextual Info: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

FPD1500

Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
Contextual Info: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a

SAB 8048 P 220 SM 590

Abstract: MAA 723 MADE S18B micro controller based cfl Inverter soc 512a d74c 4X16 lcd 1514c 8 lcd digit counter s1bc
Contextual Info: PCF84C633A J V_ SINGLE-CHIP 8-BIT MICROCONTROLLER WITH LCD DRIVERS, DERIVATIVE PORT, TIMER/CAPTURE AND TIMER/COUNTER DESCRIPTION IMPORTANT The PCF84C633A is a microcontroller with 20 on-chip liquid crystal display LCD outputs. These can be configured for

Contextual Info: BALF-SPI-01D3 50 ohm / conjugate matched to Spirit1 / 868 MHz and 915 MHz balun transformer and integrated filtering Datasheet − production data Features • 50 Ω nominal input / conjugate match to Spirit1 • Low insertion loss • Low amplitude imbalance

STK 3240

Abstract: STK 0030 700 10FB MC3 connector MNU14-250DMI 3M S11A bf1010 MVU10-6R MU10BCHT stk 088
Contextual Info: Glossary of Terminals and Tools Terms 48 Ring Tongues 53 Multi-Stud Ring Tongues 78 Standard Forks 79 Block Forks 85 Flanged Block Forks 93 Locking Forks 98 TERMINALS, KITS AND TOOLS Terminals, Kits and Tools Butt Connectors 107 Parallel Connectors 133

ADG732

Abstract: ADG726 S16A S16B design of 16-1 multiplexer SU48 6-PIN s9ad
Contextual Info: a 16-/32-Channel, 4 ⍀ +1.8 V to +5.5 V, ؎2.5 V Analog Multiplexers ADG726/ADG732 FEATURES 1.8 V to 5.5 V Single Supply ؎2.5 V Dual-Supply Operation 4 ⍀ On Resistance 0.5 ⍀ On Resistance Flatness 48-Lead TQFP or 48-Lead 7 mm ؋ 7 mm CSP Packages Rail-to-Rail Operation

ZNP100

Abstract: ms6b photocells
Contextual Info: ZETEX S E M I C O N D U C T O R S IbE » M S SERIES - • TT7GS7Ô DDDbfibfl 3 M Z E T 3 . SILICON MESA PHOTOCELLS Unencapsulated cells are coated with a special varnish to protect against contamination and moisture ingress. Encapsulated Cells are set into tough bakelite or epoxy

mcp01

Abstract: MABT01 09326 dc to 3 ghz lna application circuits RF Switch qfn RF front end
Contextual Info: MCP01 2.4 to 2.5 GHz RF Front End IC - Description The MCP01 contains a power amplifier PA , a low noise amplifier (LNA), and a SPDT switch. It is a 16-pins IC with 3x3mm2-QFN package and includes all the RF circuits that are needed between transceiver and antenna. Besides, the RF input and output impedance are 50Ω matched. Lots of

Broken Conductor Detection for Overhead Line Distribution System

Abstract: verilog code for CORDIC to generate sine wave verilog code for cordic algorithm for wireless la TXC 13.56 sma diode h5c intel 945 motherboard schematic diagram 2005Z fet k241 EARTH LEAKAGE RELAY diagram schematic diagram for panasonic inverter air cond
Contextual Info: Stratix GX Device Handbook, Volume 1 101 Innovation Drive San Jose, CA 95134 408 544-7000 www.altera.com SGX5V1-1.2 Copyright 2006 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos that are identified as trademarks and/or service marks are, unless noted otherwise, the trademarks and

s-parameter

Abstract: S11S22-S12S21 fa12 mark RF S-parameters RF transistors with s-parameters s-parameter s11 s12 s21 FA12 FB12 agilent ads cst microwave studio
Contextual Info: DesignCon 2006 Accurate Calibration and Measurement of Non-Insertable Fixtures in FPGA and ASIC Device Characterization Hong Shi, Altera Corporation [hshi@altera.com] Geping Liu, Altera Corporation Alan Liu, Altera Corporation CP-ACMFIX-1.0 Abstract S-parameter measurement on interfaces with non-insertable connections has been a

S465A

Abstract: FLM1314-18F ED-4701
Contextual Info: FLM1314-18F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.5dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=27%(Typ.) ・Broad Band: 13.75~14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

sumitomo 131 datasheet

Abstract: DC 8881 ml marking ml marking sot 89 ISO-14001 KP028J P0120008P RR0816
Contextual Info: P0120008P Technical Note 1W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +28 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package

Contextual Info: FPM21500QFN FPM21500QF N Low-Noise High-Linearity Balanced Amplifier Module LOW-NOISE HIGH-LINEARITY BALANCED AMPLIFIER MODULE Package: 4mmx4mm QFN Product Description Features The FPM21500QFN is a packaged pair of transistors pHEMT specifically optimized for balanced configuration systems. Our 0.25µm process

P012

Abstract: ISO-14001 KP028J P0120008P RR0816 marking c7 sot-89
Contextual Info: P0120008P Technical Note 1W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +28 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure

s21b

Abstract: s29b 18752 74hc74 pin diagram ic 18752 s22b 74HC74 S58D 315HZ tl072 cp equivalent
Contextual Info: CXA1998BQ Recording/Playback Equalizer Amplifier Description The CXA1998BQ is an IC developed for analog signal processing in tape recorders. Processing for both the recording and playback systems is achieved on one chip. Features • 11-bit serial data interface

BB619

Abstract: voltage stabiliser U2329B-AFL BA282 BB515 S11A S11B SO20 usw 334
Contextual Info: U2329B–AFL TELEFUNKEN Semiconductors TV-Tuner-IC with Two Separate Oscillators and Mixers, SAW-Driver and Dual-State Band Switch Features D 9 V supply voltage D SAW filter driver with low impedance output D Frequency range from 48 to 860 MHz D Voltage regulator for stable operating characteristics

Contextual Info: Low Noise GaAs MMIC Amplifier, 3.5 - 7.0 GHz Features • • • • • • • MAAM37000-A1 V4 Functional Schematic Low Noise Figure: 2.2 dB Typical High Gain: 17 dB Typical Gain Flatness: +0.5 dB Single Supply: +4 V No External Components Required DC Decoupled RF Input and Output

ecg semiconductors master replacement guide

Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Contextual Info: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei

transistor marking code 1325

Abstract: R04003 ims pcb filtronic Solid State
Contextual Info: FPD1000AS Datasheet v2.4 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency

ba 243 rf

Contextual Info: FMA3067SOT89E LOW NOISE HIGH LINEARITY PACKAGED MMIC PACKAGE: FEATURES • • • • • • API Datasheet v0.3 1.8 – 2.1 GHz 23 dBm P1dB @ 6V 16.5 dB Gain @ 1.9 GHz 38 dBm OIP3 @ 6V 3.2 dB Noise Figure @ 1.9GHz Single Supply +6V, 175mA GENERAL DESCRIPTION: