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RFP30 Datasheets (45)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RFP-300-100RN	Anaren	Flangeless Resistors 300 Watts, 100 Ohms	Original	PDF	503.33KB	2
RFP-300-50TD	Anaren	Flangeless Termination	Original	PDF	499.62KB	2
RFP3006	B&K Precision	6 GHZ RF POWER SENSOR REAL-TIME	Original	PDF	2.36MB
RFP3008	B&K Precision	8 GHZ RF POWER SENSOR REAL-TIME	Original	PDF	2.36MB
RFP-30-100R	Anaren	Flangeless Resistors 30 Watts, 100 Ohms	Original	PDF	520.18KB	2
RFP3018	B&K Precision	18 GHZ RF POWER SENSOR REAL-TIME	Original	PDF	2.36MB
RFP3040	B&K Precision	40 GHZ RF POWER SENSOR REAL-TIME	Original	PDF	2.36MB
RFP-30-50T	Anaren	Flangeless Termination 30 Watts, 50 Ohms	Original	PDF	503.5KB	2
RFP3055	Fairchild Semiconductor	12A, 60V, 0.150 ?, N-Channel Power MOSFETs	Original	PDF	422.94KB	8
RFP3055	Harris Semiconductor	12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs)	Original	PDF	117.4KB	8
RFP3055	Intersil	12A, 60V, 0.150 ?, N-Channel Power MOSFETs	Original	PDF	83.92KB	8
RFP3055	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	40.82KB	1
RFP3055LE	Fairchild Semiconductor	11A, 60V, 0.107 ?, Logic Level, N-Channel Power	Original	PDF	420.95KB	8
RFP3055LE	Harris Semiconductor	12A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs	Original	PDF	107.06KB	7

RFP3055LE	Intersil	11A, 60V, 0.107 ?, Logic Level, N-Channel Power MOSFETs	Original	PDF	87.25KB	8
RFP3055LE	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	40.82KB	1
RFP3055RLE	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
RFP3055RLE	Intersil	Obsolete Product Datasheet	Scan	PDF	344.67KB	6
RFP3055RLE	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	68.67KB	1
RFP-30A50TP	Anaren	Flanged Termination 50 Ohms	Original	PDF	88.7KB	2

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Harris Semiconductor RFP30N6LER4541 RFP30N6LER4541
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	RFP30N6LER4541		4,000		631	1 - 10 - 100 - 1000 $0.55 10000 $0.49	Buy Now
Rochester Electronics	RFP30N6LER4541		4,000		1	1 - 10 - 100 $0.53 1000 $0.44 10000 $0.39	Buy Now
Infineon Technologies AG IRFP3077PBFXKMA1 - Rail/Tube (Alt: IRFP3077PBFXKMA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IRFP3077PBFXKMA1	Tube	200		400	1 - 10 - 100 - 1000 $2.06 10000 $1.96	Buy Now
Mouser Electronics	IRFP3077PBFXKMA1					1 $6.83 10 $3.61 100 $3.04 1000 $2.75 10000 $2.72	Get Quote
Newark	IRFP3077PBFXKMA1	Bulk	308		1	1 $7.54 10 $6.12 100 $4.01 1000 $3.46 10000 $3.46	Buy Now
TME	IRFP3077PBFXKMA1		99		1	1 $3.65 10 $3.20 100 $1.99 1000 $1.96 10000 $1.96	Buy Now
EBV Elektronik	IRFP3077PBFXKMA1		400	16 Weeks	400	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IRFP3006PBF - Bulk (Alt: 31Y2066)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	IRFP3006PBF	Bulk			1	1 $6.73 10 $5.02 100 $4.47 1000 $3.40 10000 $3.40	Get Quote
	IRFP3006PBF	Tube			1,200	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	IRFP3006PBF	Bulk	1,018		1	1 $6.73 10 $5.02 100 $4.47 1000 $3.40 10000 $3.40	Buy Now
Rochester Electronics	IRFP3006PBF		467,001		1	1 - 10 - 100 $2.70 1000 $2.41 10000 $2.27	Buy Now
Omega Engineering CRFP-3018/240-A CERAMIC RIBBON HEATERS ULTRA-HIGH TEMPERATURE, HELICALLY WOUND - Bulk (Alt: CRFP-3018/240-A)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	CRFP-3018/240-A	Bulk		8 Weeks	1	1 $2894.86 10 $2894.86 100 $2894.86 1000 $2894.86 10000 $2894.86	Buy Now
Newark	CRFP-3018/240-A	Bulk			1	1 $2894.86 10 $2894.86 100 $2894.86 1000 $2894.86 10000 $2894.86	Buy Now
Omega Engineering CRFP-3012/240-A CERAMIC RIBBON HEATERS ULTRA-HIGH TEMPERATURE, HELICALLY WOUND - Bulk (Alt: CRFP-3012/240-A)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	CRFP-3012/240-A	Bulk		8 Weeks	1	1 $2038.65 10 $2038.65 100 $2038.65 1000 $2038.65 10000 $2038.65	Buy Now
Newark	CRFP-3012/240-A	Bulk			1	1 $2038.65 10 $2038.65 100 $2038.65 1000 $2038.65 10000 $2038.65	Buy Now

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RFP30 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FD3055 Abstract: Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs • 12A, 60V Formerly developmental type TA49082. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve	Original	rfd3055 rfd3055sm rfp3055 ta49082 +8175oc tb334 fd3055 fp3055 is433 4078 relay an7254 rfd3055sm9a	PDF
FD3055 Abstract: fp3055 TA49082 IS433 RFD3055 Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a	Original	rfd3055 rfd3055sm rfp3055 ta49082 +7tb334 rfd3055sm9a136 rfd3055sm9a o-252 fd3055 fp3055 is433	PDF
FD3055 Abstract: Fp3055 Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet Title FD3 5, D30 SM, P30 bt A, V, 50 m, anwer OSTs utho eyrds terrpoon, July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	Original	rfd3055 rfd3055sm rfp3055 fd3055 +1fp3055	PDF
f3055l Abstract: FP3055LE Contextual Info: ? *3 2 £ RFD3055LE, RFD3055LESM, RFP3055LE 12A, 60V, 0.150 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 12A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature	OCR Scan	rfd3055le rfd3055lesm rfp3055le 150i2 +81e-30 06e-3 22e-7 48e-3 77e-5 55e-3 f3055l fp3055le	PDF
Contextual Info: P *3 3 S RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 30A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum	OCR Scan	rfg30p06 rfp30p06 rf1s30p06 rf1s30p06sm +60-065i2 81e-8 23e-1 97e-3 37e-5 78e-9	PDF
f3055l Abstract: FP3055LE u603 RFP3055LE TA49158 Contextual Info: RFD3055LE, RFD3055LESM, RFP3055LE inter«! D a ta S h e e t N o vem b er 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs F ile N u m b e r 4 0 4 4 .3 Features • 11 A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process	OCR Scan	rfd3055le rfd3055lesm rfp3055le ta49158 +6107c2 6-s26 an7260 f3055l fp3055le u603	PDF
f1s30p05 Abstract: RF1S30P05SM RF1S30P05SM9A RFG30P05 RFP30P05 TB334 Contextual Info: RFG30P05, RFP30P05, RF1S30P05SM Data Sheet July 1999 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs • 30A, 50V Formerly developmental type TA09834. Ordering Information PACKAGE 2436.4 Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses	Original	rfg30p05 rfp30p05 rf1s30p05sm ta09834 +3f1s30p05 rf1s30p05sm9a tb334	PDF
F1S30P05 Contextual Info: RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM fB l H A R R IS u u semiconductor 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JE D EC STYLE TO -247 • 30A .50V SOURCE = 0.0651J • Temperature Compensating PSPICE Model	OCR Scan	rfg30p05 rfp30p05 rf1s30p05 rf1s30p05sm +20651j f1s30p05	PDF
f3055l Abstract: FP3055LE f3055 Fp3055 FP3055L RFD3055LESM RFP3055LE RFD3055LE AN9321 RFD3055LESM9A Contextual Info: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes	Original	rfd3055le rfd3055lesm rfp3055le ta49158 +7f3055l fp3055le f3055 fp3055 fp3055l an9321 rfd3055lesm9a	PDF
0n06 Abstract: mosfet motor dc 48v RFP30N06LE RF1S30N06LESM RF1S30N06LESM9A TB334 0N06L 1S30N06L F30N06LE Contextual Info: [ /Title RFP3 0N06L E, RF1S3 0N06L ESM /Subject (30A, 60V, ESD Rated, 0.047 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, ESD Rated, 0.047 Ohm, Logic Level NChan- RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic	Original	0n06l rfp30n06le rf1s30n06lesm 0n06 +5mosfet motor dc 48v rf1s30n06lesm9a tb334 1s30n06l f30n06le	PDF
FD3055 Abstract: IS433 FD3055 HARRIS TA49082 mosfet motor dc 48v AN7254 AN7260 RFD3055 RFD3055SM RFP3055 Contextual Info: RFD3055, RFD3055SM RFP3055 S E M I C O N D U C T O R 12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs MegaFETs February 1994 Features Packaging • 12A, 60V JEDEC TO-220AB TOP VIEW DRAIN (FLANGE) • rDS(ON) = 0.150Ω • Temperature Compensating PSPICE Model	Original	rfd3055 rfd3055sm rfp3055 o-220ab +10175oc o-251aa 1-800-4-harris fd3055 is433 fd3055 harris ta49082 mosfet motor dc 48v an7254 an7260	PDF
F30N06LE Abstract: RFP30N06LE MOSFET 38E-3 TA49027 F30N06L RF1S30N06LESM RFP30N06LE 1S30N06L AN7254 RF1S30N06LE Contextual Info: RFP30N06LE, RF1S30N06LE, RF1S30N06LESM S E M I C O N D U C T O R 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1995 Features Packages JEDEC TO-220AB • 30A, 60V SOURCE DRAIN GATE • rDS ON = 0.047Ω • 2kV ESD Protected	Original	rfp30n06le rf1s30n06le rf1s30n06lesm o-220ab +10o-262aa performanc39 1e-30 f30n06le rfp30n06le mosfet 38e-3 ta49027 f30n06l 1s30n06l an7254	PDF
Contextual Info: P *3 3 S RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea ture sizes approaching those of LSI circuits, gives optimum	OCR Scan	rfg30p05 rfp30p05 rf1s30p05 rf1s30p05sm +60-065i2 operati85e-9 81e-8 23e-1 97e-3 37e-5	PDF
p30N06LE Abstract: P30N06 RFP30N06LE MOSFET P30N06L 107E3 p30n0 Contextual Info: m HARRIS RFP30N06LE S E M I C O N D U C T O R 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFET MegaFET January 1994 Package Features TO-220AB • 30A.60V TOP VIEW • r DS(ON) - 0.047£2 • 2KV ESD Protected DRAIN	OCR Scan	rfp30n06le o-220ab 07e-3 03e-7 +1038e-3 64e-5 75e-3 90e-6 p30n06le p30n06 rfp30n06le mosfet p30n06l 107e3 p30n0	PDF

F1S30P05 Abstract: RFP30P05 RF1S30P05SM RF1S30P05SM9A RFG30P05 TB334 Contextual Info: RFG30P05, RFP30P05, RF1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives	Original	rfg30p05 rfp30p05 rf1s30p05sm ta09834 +3f1s30p05 rf1s30p05sm9a tb334	PDF
f3055l Abstract: FP3055LE f3055 RFP3055LE Contextual Info: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet Title FD3 5L, D30 LSM November 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes	Original	rfd3055le rfd3055lesm rfp3055le f3055l +2fp3055le f3055	PDF
Contextual Info: RFP3055RLE Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)10 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC)	Original	rfp3055rle	PDF
Contextual Info: RFP3055 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)30# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)53# Minimum Operating Temp (øC)-55õ	Original	rfp3055	PDF
0N06L Abstract: RFP30N06 Contextual Info: RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs [ /Title RFP3 0N06L E, RF1S3 0N06L ESM /Subject (30A, 60V, ESD Rated, 0.047 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil	Original	rfp30n06le rf1s30n06lesm 0n06l rfp30n06	PDF
fd3055 Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a	Original	rfd3055 rfd3055sm rfp3055 ta49082 +1fd3055	PDF
F1S30P06 Abstract: RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334 Contextual Info: [ /Title RFG30 P06, RFP30P 06, RF1S30 P06, RF1S30 P06SM /Subject (30A, 60V, 0.065 Ohm, PChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO247, TO220AB, TO262AA, TO263AB) RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM	Original	rfg30 rfp30p rf1s30 p06sm +9o220ab o262aa o263ab rfg30p06 rfp30p06 f1s30p06 rf1s30p06 rf1s30p06sm tb334	PDF
F1S30P06 Abstract: F1S30 mosfet motor dc 48v R*P30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 RFP30P06 TB334 F1S30P Contextual Info: RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs • 30A, 60V Formerly developmental type TA09834. Ordering Information PACKAGE TO-247 RFG30P06 RFP30P06 TO-220AB RFP30P06 RF1S30P06SM TO-263AB F1S30P06 • rDS ON = 0.065Ω	Original	rfg30p06 rfp30p06 rf1s30p06sm ta09834 +11o-247 o-220ab o-263ab 175oc tb334 f1s30p06 f1s30 mosfet motor dc 48v r*p30p06 rf1s30p06sm9a f1s30p	PDF
f3055l Abstract: f3055 FP3055LE f3055l datasheet AN9322 Fp3055 RFP3055LE datasheet fp3055le N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V RFD3055LE Contextual Info: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet November 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs • 11A, 60V Formerly developmental type TA49158. • rDS ON = 0.107Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve	Original	rfd3055le rfd3055lesm rfp3055le ta49158 +9tb334 f3055l f3055 fp3055le f3055l datasheet an9322 fp3055 datasheet fp3055le n-channel enhancement mode power mosfet 8a 60v	PDF
30N06LE Abstract: 30n06l s1am 30n06 F30N06LE Contextual Info: fT\| HARRIS RFP30N06LE, RF1S30N06LE, S E ",O N O U C T O R RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs J u ly 1 9 9 5 Features Packages JE D EC T 0 -2 2 0 A B • 3 0 A ,6 0 V • r D S O N \| =	OCR Scan	rfp30n06le rf1s30n06le rf1s30n06lesm -262a +8576e-4 591e-9 1e-30 30n06le 30n06l s1am 30n06 f30n06le	PDF

RFP30 Search Results

RFP30 Datasheets (45)

RFP30 Price and Stock

Harris Semiconductor RFP30N6LER4541

Infineon Technologies AG IRFP3077PBFXKMA1

Infineon Technologies AG IRFP3006PBF

Omega Engineering CRFP-3018/240-A

Omega Engineering CRFP-3012/240-A

RFP30 Datasheets Context Search

FD3055

FD3055

FD3055

f3055l

f3055l

f1s30p05

F1S30P05

f3055l

0n06

FD3055

F30N06LE

p30N06LE

F1S30P05

f3055l

0N06L

fd3055

F1S30P06

F1S30P06

f3055l

30N06LE