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    F1S30 Search Results

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    F1S30 Price and Stock

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    Fairchild Semiconductor Corporation RF1S30P05SM

    Trans MOSFET P-CH Si 50V 30A 3-Pin(2+Tab) TO-263AB
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    Bristol Electronics RF1S30P05SM 204
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    Harris Semiconductor RF1S30P06SM

    Trans MOSFET P-CH Si 60V 30A 3-Pin(2+Tab) TO-263AB
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    Bristol Electronics RF1S30P06SM 9
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    Rochester Electronics RF1S30P06SM 375 1
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    • 1000 $1.73
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    Harris Semiconductor RF1S30N06LE

    Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
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    Rochester Electronics RF1S30N06LE 1,667 1
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    Harris Semiconductor RF1S30P05

    Power Field-Effect Transistor, 30A I(D), 50V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
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    Rochester Electronics RF1S30P05 1,040 1
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    Harris Semiconductor RF1S30P05SM

    MOSFET P-Channel 50V 30A (Tc) TO-263-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RF1S30P05SM 92 1
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    F1S30 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    F1S30P06

    Abstract: F1S30 mosfet motor dc 48v R*P30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 RFP30P06 TB334 F1S30P
    Contextual Info: RFG30P06, RFP30P06, F1S30P06SM Data Sheet July 1999 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs • 30A, 60V Formerly developmental type TA09834. Ordering Information PACKAGE TO-247 RFG30P06 RFP30P06 TO-220AB RFP30P06 F1S30P06SM TO-263AB F1S30P06 • rDS ON = 0.065Ω


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    rfg30p06rfp30p06rf1s30p06smta09834+11o-247o-220abo-263ab175octb334f1s30p06f1s30mosfet motor dc 48vr*p30p06rf1s30p06sm9af1s30p PDF

    Contextual Info: P *3 3 S RFG30P06, RFP30P06, F1S30P06, F1S30P06SM 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 30A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


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    rfg30p06rfp30p06rf1s30p06rf1s30p06sm+60-065i281e-823e-197e-337e-578e-9 PDF

    f1s30p05

    Abstract: RF1S30P05SM RF1S30P05SM9A RFG30P05 RFP30P05 TB334
    Contextual Info: RFG30P05, RFP30P05, F1S30P05SM Data Sheet July 1999 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs • 30A, 50V Formerly developmental type TA09834. Ordering Information PACKAGE 2436.4 Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses


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    rfg30p05rfp30p05rf1s30p05smta09834+3f1s30p05rf1s30p05sm9atb334 PDF

    F1S30P05

    Contextual Info: RFG30P05, RFP30P05, F1S30P05, F1S30P05SM fB l H A R R IS u u semiconductor 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JE D EC STYLE TO -247 • 30A .50V SOURCE = 0.0651J • Temperature Compensating PSPICE Model


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    rfg30p05rfp30p05rf1s30p05rf1s30p05sm+20651jf1s30p05 PDF

    Contextual Info: P *3 3 S RFG30P05, RFP30P05, F1S30P05, F1S30P05SM 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits, gives optimum


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    rfg30p05rfp30p05rf1s30p05rf1s30p05sm+60-065i2operati85e-981e-823e-197e-337e-5 PDF

    F1S30P05

    Abstract: RFP30P05 RF1S30P05SM RF1S30P05SM9A RFG30P05 TB334
    Contextual Info: RFG30P05, RFP30P05, F1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives


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    rfg30p05rfp30p05rf1s30p05smta09834+3f1s30p05rf1s30p05sm9atb334 PDF

    F1S30P06

    Abstract: RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334
    Contextual Info: [ /Title RFG30 P06, RFP30P 06, F1S30 P06, F1S30 P06SM /Subject (30A, 60V, 0.065 Ohm, PChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO247, TO220AB, TO262AA, TO263AB) RFG30P06, RFP30P06, F1S30P06, F1S30P06SM


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    rfg30rfp30prf1s30p06sm+9o220abo262aao263abrfg30p06rfp30p06f1s30p06rf1s30p06rf1s30p06smtb334 PDF

    F1S30P06

    Abstract: RFP30P06 RF1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 299E-3
    Contextual Info: RFG30P06, RFP30P06, F1S30P06, F1S30P06SM S E M I C O N D U C T O R 30A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs March 1995 Features • • • • • • Packages JEDEC STYLE TO-247 30A, 60V rDS ON = 0.065Ω Temperature Compensating PSPICE Model


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    rfg30p06rfp30p06rf1s30p06rf1s30p06sm+5o-247175ocf1s30p06rf1s30p06sm9a299e-3 PDF

    RFP30P06

    Abstract: R*P30P06 F1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 TB334
    Contextual Info: RFG30P06, RFP30P06, F1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs Features • 30A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


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    rfg30p06rfp30p06rf1s30p06smta09834+8o-247o-220abo-263ab175ocr*p30p06f1s30p06rf1s30p06sm9atb334 PDF

    RFP30P06

    Contextual Info: RFG30P06, RFP30P06, F1S30P06SM Data Sheet Title FG3 06, P30 6, 1S3 06S bt A, V, 65 m, anwer OSTs utho eyrds ter- July 1999 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


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    rfg30p06rfp30p06rf1s30p06smta09834 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


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    1-888-intersilms-012aamo-153aarf1k49090+16rf1k49093rf1k49092itf87056dqtitf87072dk8titf87008dqtrf1k4922365e9 transistortransistor 75307dtransistor 65e8sd mosfet drive datasheet 4468 8 ping40n60rhr15120 equivalent10n120bnd76107dtransistor 76121demerson three phase dc motor driver service note PDF

    f1s30p05

    Abstract: RS223 RFP30P05 TA09834 RF1S30P05 RF1S30P05SM RFG30P05 rfp30p05 harris
    Contextual Info: RFG30P05, RFP30P05, F1S30P05, F1S30P05SM S E M I C O N D U C T O R 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features • • • • • • Packages JEDEC STYLE TO-247 30A, 50V rDS ON = 0.065Ω Temperature Compensating PSPICE Model


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    rfg30p05rfp30p05rf1s30p05rf1s30p05sm+6o-247175ocf1s30p05rs223ta09834rfp30p05 harris PDF

    RFP30P

    Contextual Info: RFG30P05, RFP30P05, F1S30P05SM Data Sheet July 1999 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs [ /Title RFG3 0P05, RFP30 P05, RF1S3 0P05S M /Subject (30A, 50V, 0.065 Ohm, PChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, PChannel Power


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    rfg30p05rfp30p05rf1s30p05smrfp30+30p05so220abrfp30p PDF

    F1S30P06

    Abstract: 30p06
    Contextual Info: RFG30P06, RFP30P06, r f 1 S30P06, F1S30P06SM HARRIS S E M I C O N D U C T O R 30A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs March 1995 Features Packages JEDEC STYLE TO-247 • 3 0A , 60V • rDS ON = 0-06512 • T e m p e ra tu re C o m p e n s atin g P S P IC E M odel


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    rfg30p06rfp30p06s30p06rf1s30p06sm+8o-247p06sm81e-823e-197e-337e-5f1s30p0630p06 PDF

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


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    1-800-4harrisequivalent data book of 10n60 mosfetmc14016cpgd4511+7an-6466cx 2859 smd74ac14 spice6120* harrishcf4018be7028 smd transistorspice irfbc40 PDF

    Contextual Info: mtefsil RFG30P05, RFP30P05, F1S30P05SM D a ta S h e e t J u ly 1 9 9 9 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs 243 $.4 Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives


    OCR Scan
    rfg30p05rfp30p05rf1s30p05smta09834+2rfg30p0san7260 PDF