RFP25N05 Search Results

transistor RFP25N05

Abstract: RFP25N05 AN7254 AN7260 AN9321 AN9322 TB334
Contextual Info: RFP25N05 Data Sheet Title FP2 05 bt A, V, 47 m, 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET Features The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits,

Contextual Info: RFP25N05 HARRIS S E M I C O N D U C T O R 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET July 1998 Features Description • 25A, 50V The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses fea­ ture sizes approaching those of LSI integrated circuits, gives

TA09871

Abstract: RFP25N05L
Contextual Info: inter«! RFP25N05L D a ta S h e e t J u ly 1999 25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET Features NOTE: TO-220AB • UIS SOA Rating Curve Single Pulse • Design Optimized for 5V Gate Drives • Can be Driven Directly from CMOS, NMOS, TTL Circuits

Contextual Info: ^s.mi-dondiicto'i Lpioduati, One. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 RFP25N05 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET Features • 25A,50V The RFP25N05 N-channel power MOSFET is manufactured

AN7254

Abstract: rca 549 RFP25N05L AN-7254 AN7260 rca application notes
Contextual Info: Logic-Level Power MOSFETs RFP25N05L File Number 2270 N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs 25 A, 50 V Tdsloni —0.047 Cl Features: • Design optimized for 5 volt gate drive m Can be driven directly from Q-MOS, N-MOS, TTL Circuits

Transistor W06

Abstract: transistor RFP25N05 FP25N
Contextual Info: JJÌ H A R R I RFP25N05 S A u g u s t 1991 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package T O -2 2 0 A B TOP VIEW • 25A, 50V • rDS(on) = 0 .047H • UIS SOA Rating Curve (Single Pulse) • SOA is Power-Dissipation Limited

IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3

transistor s2a

Abstract: AN7254 AN7260 AN9321 AN9322 RFP25N05 TB334 4511 mosfet la 4507
Contextual Info: RFP25N05 Data Sheet July 1999 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER RFP25N05 PACKAGE TO-220AB BRAND 2112.4 Features • 25A, 50V The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses

RFP25N05L

Abstract: TB334 AN7254 AN7260
Contextual Info: RFP25N05L Data Sheet Title FP2 05L bt A, V, 47 m, gic vel, Cha el wer OST utho July 1999 25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET Features The RFP25N05L is an N-Channel logic level power MOSFETs are manufactured using the MegaFET process.

RFM25N05

Abstract: RFP25N05 RFM25N06 RFP25N06 92cs-5707i
Contextual Info: G E SOLID STATE d Ë | 3Ö7SDÖ1 DDlfllfll L> J ~ El 3875081 G E SOLID STATE 01E 18181 d7-*> 7-13 Standard Power M O RFM25N05, RFM25N06, RFP25N05, RFP25N06 File Num ber 1492 Power MOS Field-Effect Transistors

transistor RFP25N05

Contextual Info: RFP25N05 intelai I D ata S h e e t J u ly 1999 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET • 25A, 50V RFP25N05 PA C K A G E TO -220AB • rDS ON = 0.047Q • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve

IN5240B

Abstract: P25N05 IN5240 0-15V RFP25N05 lo205 ls25 diode 5N05 72S4 c048
Contextual Info: Power MegaFETs RFP25N05 F ile N u m b e r 211:2 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs 25 A, 50 V rDs(on) = 0.047 O N -C H A N N E L E N H A N C E M E N T M O D E Features: • S ingle pu lse avalanche en ergy ra ted ■ SOA is p o w e r-d is s ip a tio n lim ite d

transistor RFP25N05

Abstract: AN7254 AN7260 AN9321 AN9322 RFP25N05
Contextual Info: RFP25N05 S E M I C O N D U C T O R 25A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET MegaFET April 1995 Features Packaging • 25A, 50V JEDEC TO-220AB • rDS(ON) = 0.047Ω SOURCE DRAIN GATE • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve

transistor RFP25N05

Abstract: AN7254 AN7260 AN9321 AN9322 RFP25N05 TB334
Contextual Info: RFP25N05 Data Sheet January 2002 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET Features • 25A, 50V The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits,

Contextual Info: RFP25N05L Semiconductor April 1999 Data Sheet 25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET • 25A, 50V NOTE: TO-220AB • UIS SOA Rating Curve Single Pulse • Design Optimized for 5V Gate Drives • Can be Driven Directly from CMOS, NMOS, TTL Circuits

AN7254

Abstract: AN7260 RFP25N05L TB334
Contextual Info: RFP25N05L Data Sheet July 1999 25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET File Number 2270.3 Features • 25A, 50V The RFP25N05L is an N-Channel logic level power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of

schottky rectifier motorola mbr

Abstract: 593D ISL6430 ISL6430CB ISL6430CR TB379 SPRAGUE MOLDED CERAMIC capacitor MO-220-VHHB
Contextual Info: ISL6430 Data Sheet August 2002 Single Sync Buck PWM Controller for Broadband Gateway Applications FN9017.1 Features • Drives Two N-Channel MOSFETs The ISL6430 provides complete control and protection for a DC-DC converter optimized for high-performance broadband

2N6394

Abstract: 593D HIP6011
Contextual Info: HIP6011 TM Buck Pulse-Width Modulator PWM Controller and Output Voltage Monitor September 1997 Features Description • Drives N-Channel MOSFET The HIP6011 provides complete control and protection for a DC-DC converter optimized for high-performance microprocessor applications. It is designed to drive an N-Channel

N 341 AB

Abstract: 593D HIP6006 ISL6522 ISL6522CB TB379
Contextual Info: ISL6522 TM Data Sheet June 2001 Buck and Synchronous-Rectifier Pulse-Width Modulator PWM Controller The ISL6522 provides complete control and protection for a DC-DC converter optimized for high-performance microprocessor applications. It is designed to drive two

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

T68-52A

Abstract: AN9722 PO564 MBR140P JOLO SPCJ-123-01 Schottky Diode 75V 7A T38-52 capacitor ceramic 33pF mosfet T60 pentium 4 motherboard schematic diagram
Contextual Info: Switchmode DC-DC Converter Family Using HIP6006 and HIP6007 PWM Controller ICs Application Note August 1997 AN9761 Authors: Greg J. Miller, Bogdan M. Duduman Introduction Today’s high-performance microprocessors present many challenges to their power source. High power consumption,

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

593D

Abstract: AN9722 HIP6007 HIP6013 HIP6013CB
Contextual Info: HIP6013 Data Sheet June 1997 Buck Pulse-Width Modulator PWM Controller • Drives N-Channel MOSFET The output voltage of the converter can be precisely regulated to as low as 1.27V, with a maximum tolerance of ±1.5% over temperature and line voltage variations.

593D

Abstract: AN9722 HIP60012 HIP6006 HIP6012 HIP6012CB
Contextual Info: HIP6012 Data Sheet Buck and Synchronous-Rectifier Pulse-Width Modulator PWM Controller The HIP6012 provides complete control and protection for a DC-DC converter optimized for high-performance microprocessor applications. It is designed to drive two N-Channel MOSFETs in a synchronous-rectified buck