RFP25N06 Search Results

f25n06l

Abstract: F25N06 RFP2506L RFP25N06L an7254 TA9638
Contextual Info: Logic-Level Power MOSFETs RFP25N06L File Number 2044 N-Cnannel Logic Level Power Field-Effect Transistors L2FET 25 A, 50 V - 60 V rDs(on) = 0.085 O Features: N-CHANNEL ENHANCEMENT MODE • Design optim ized fo r 5 volt gate drive ■ Can be driven directly from Q-MOS,

Contextual Info: HAFRFRIS RFP25N06, RF1S25N06, RF1S25N06SM S E M I C O N D U C T O R 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

F1S25N06

Abstract: AN9321 RF1S25N06SM RF1S25N06SM9A RFP25N06 TB334 F 407 Diode F1S25N
Contextual Info: RFP25N06, RF1S25N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding

F1S25N06

Abstract: AN7254 AN7260 AN9321 RF1S25N06 RF1S25N06SM RF1S25N06SM9A RFP25N06
Contextual Info: RFP25N06, RF1S25N06, RF1S25N06SM S E M I C O N D U C T O R 25A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 25A, 60V SOURCE DRAIN GATE • rDS ON = 0.047Ω • Temperature Compensating PSPICE Model

RFP25N06

Abstract: CS3707 92CS-37801 RFM25N06 TA9387
Contextual Info: Standard Power MOSFETs- — - RFM25N06 RFP25N06 File Number 1492 N-Channel Enhancennent-Mode Power Field-Effect Transistors 25 A, 50 V — 60 V rDs on = 0.07 O

Contextual Info: ASSESS? RFP25N06, RF1S25N06, RF1S25N06SM 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­

F1S25N

Abstract: F1S25N06
Contextual Info: RFP25N06, RF1S25N06, RF1S25N06SM ffì HAFURIS S E M I C O N D U C T O R 25A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages J E D E C T O -2 2 0 A B • 25A, 60V • r DS ON = 0 .0 4 7 U • Temperature Compensating PSPICE Model

5n06

Abstract: F1S25N06 302 s1b diode
Contextual Info: RFP25N06, RF1S25N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs [ /Title RFP2 5N06, RF1S2 5N06S M /Subject (25A, 60V, 0.047 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB

RFM25N05

Abstract: RFP25N05 RFM25N06 RFP25N06 92cs-5707i
Contextual Info: G E SOLID STATE d Ë | 3Ö7SDÖ1 DDlfllfll L> J ~ El 3875081 G E SOLID STATE 01E 18181 d7-*> 7-13 Standard Power M O RFM25N05, RFM25N06, RFP25N05, RFP25N06 File Num ber 1492 Power MOS Field-Effect Transistors

Contextual Info: in t e r r ii RFP25N06, RF1S25N06SM D a ta S h e e t 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

F1S25N06

Abstract: RF1S25N06 RF1S25N06SM RF1S25N06SM9A RFP25N06 TB334 183E-9
Contextual Info: RFP25N06, RF1S25N06, RF1S25N06SM Data Sheet January 2002 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs Features • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

RFP25N06

Contextual Info: RFP25N06, RF1S25N06, RF1S25N06SM HARRIS S E M I C O N D U C T O R 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

F1S25N06

Abstract: 183E-9 302 s1b diode 585E-3 45E-9
Contextual Info: RFP25N06, RF1S25N06, RF1S25N06SM S E M I C O N D U C T O R 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

f25n06l

Abstract: transistor marking rip RFP25N06L F25N06 transistor l 2
Contextual Info: RFP25N06L {£} H A R R IS August 1991 N-Channel Logic Level Enhancem ent-M ode Power Field-Effect Transistor L2 FET F e a tu re s • Package TO-220AB TOP VIEW 25A , 60 V • rDS(ON) = 0.085f2 DRAIN (FLANGE) • Design O p tim ized for 5V G ate Drives u

AN9405

Abstract: SCHEMATIC 10kw inverter 10kw dc-dc Switching Power supply with HIP4080A 12V BIPOLAR STEPPER MOTOR IRF520 application note dc drive HIP4080A demo board HIP4080A HIP4080A/81AEVALZ
Contextual Info: HIP4081A, 80V High Frequency H-Bridge Driver Application Note December 11, 2007 Introduction AN9405.5 80V The HIP4081A is a member of the HIP408x family of High Frequency H-Bridge Driver ICs. A simplified application diagram of the HIP4081A IC is shown in Figure 1. The

P25N06

Abstract: 25n06 rfm25n t3901
Contextual Info: SbE D î J j • 43QS271 0041742 713 H A R R IHAS R I S HARRIS SEMICOND SECTOR F R M F P 2 5 N 6 2 5 N 6 N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 — " T -S fl-O J Package Features TO-204AA • 25A, 50V and 60V • rDS on = 0.0 7ÎÏ

buz11

Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
Contextual Info: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

AN9405

Abstract: stepper motor hip4081 Switching Power supply with HIP4080A HIP4081A HIP4080A HIP408X 12VDC all mosfet equivalent book HIP4080A equivalent Power MOSFETs Application Notes irf520
Contextual Info: HIP4081A, 80V High Frequency H-Bridge Driver Application Note February 2003 AN9405.4 Author: George E. Danz Introduction 80V The HIP4081A is a member of the HIP408X family of High Frequency H-Bridge Driver ICs. A simplified application diagram of the HIP4081A IC is shown in Figure 1. The

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

BUZ71A equivalent

Abstract: IRL734 IRF540 MAX643XCSA how to stepup 1.5v to 5v, 12v TRANSISTOR+642
Contextual Info: y i/ iy j x iy i/ i F ix e d O u tp u t 10W CM O S Step-U p S w itc h in g R eg u lato rs _ F eatu res The MAX641/MAX642/MAX643 step-up switching regu­ lators are designed for minimum component DC-DC converter circuits in the 5mW to 10W range.

irf520 mosfet

Abstract: h-bridge gate drive 4081A HIP4081 amplifier circuit diagram class D AN9405 HIP4080A HIP4081A HIP408X level-shifter dip irf520 switch
Contextual Info: HIP4081A, 80V High Frequency H-Bridge Driver September 1997 AN9405.3 Author: George E. Danz Introduction The HIP4081A is a member of the HIP408X family of High Frequency H-Bridge Driver ICs. A simplified application diagram of the HIP4081A IC is shown in Figure 1. The

IRL734

Abstract: IRZ14 rf513 MAX642 equivalent analog IRF513 MTM25N05L IR power mosfet switching power supply irf540 equivalent IRF540 n-channel MOSFET DC TO DC CONVERTER MAX643
Contextual Info: y i/iy jx iy i/i F ix e d O u tp u t 1 0 W C M O S S te p -U p S w itc h in g R e g u la to rs The M A X 6 4 1 /M A X 6 4 2 /M A X 6 4 3 s te p -u p s w itc h in g re g u ­ lato rs are d e s ig n e d for m in im u m c o m p o n e n t D C -D C c o n v e rte r c irc u its in th e 5m W to 10W ra nge.

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A