43QS271 Search Results

P25N06

Abstract: 25n06 rfm25n t3901
Contextual Info: SbE D î J j • 43QS271 0041742 713 H A R R IHAS R I S HARRIS SEMICOND SECTOR F R M F P 2 5 N 6 2 5 N 6 N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 — " T -S fl-O J Package Features TO-204AA • 25A, 50V and 60V • rDS on = 0.0 7ÎÏ

8085 WORD DOC

Abstract: m82c59 82C59A harris I82C59A 82C59A 8086 microprocessor hex code
Contextual Info: HARRIS S E M C O N D S E C T O R IS t f j 43QS271 DQllOOl 1 J ” ~ ^ & - 3 3 '/ 3 S 3 h a r r is Q 2 C 5 9 A CMOS Priority a . . Ä Interrupt Controller R E F E R E N C E P A G E 4 -1 5 6 F O R a p p l ic a t io n n o t e 109 Features Pinouts TOP VIEW • Pin Compatible with NMOS 8259A

Contextual Info: fX Ì H A R U S E M I C O N D U C T O R U ACS20MS R IS Radiation Hardened Dual 4-Input NAND Gate May 1995 Features • Pinouts 14 LEAD CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR, CDIP2-T14, LEAD FINISH C TOP VIEW 1.25 Micron Radiation Hardened SOS CMOS • Total Dose 300K RAD Si

Contextual Info: HARRIS SEMICON] SECTOR LIE ]> • HA-2548 3 “ SH S Precision, High Slew Rate, Wideband Operational Amplifier March 1993 Features • Description High Stow • Low Offset

Contextual Info: HARRIS SEMICOND SECTOR 37E D 4305271 0021407 0 1E 13593 3875081 G E SOLID STATE - BIHAS & D _ TC D 4 0 3 0A T ypes CM OS Quad Exclusive-OR Gate The R CA-C D 4030A types consist o f fo u r in­ dependent Exclusive-OR gates integrated on a single m o n o lith ic silicon chip. Each Exclusive-OR gate consists o f fo u r n-channel and

Contextual Info: HARRIS S E M I C O N D U C T O R CD74FCT841T, CD74FCT843T, CD74FCT845T, CD74FCT2841T Fast CMOS Bus Interface Latches August 1996 Ordering Information Features • Advanced 0.8 micron CMOS Technology • These Devices are Pin Compatible with Bipolar FAST Series at a Higher Speed and Lower Power

Contextual Info: HA RR IS SEÎ1IC0ND S E C T O R 40E D • 43D2271 0Q32T4Ô HSP9520/H SP9521 *£] H a r r is Multilevel Pipeline Register May 1991 Features ■ HAS D escription ' . . . . _ ■ These devices are multilevel pipeline registers implemented using a low power CMOS process. They are pin forain

600V 25A Ultrafast Diode

Abstract: RURH3040CC RURH3060CC TA09903
Contextual Info: RURH3040CC, RURH3060CC in t e r s il Data Sheet Ja nu a ry 2000 30A, 400V - 600V Ultrafast Dual Diodes Features File N u m b e r 2772.4 RURH3040CC and RURH3060CC are ultrafast dual diodes • Ultrafast with Soft Recovery .<55ns

51125

Abstract: HA9P5112-9 has112 HA-5104 HA1-5114-2 HA6104 transistor 5104 db on 140 harris 5112 HA-5102 HAS104
Contextual Info: H A R R IS S E n iC O N D b l E SECTOR J> M 30SS71 S E M I C O N D U C T O R Low Noise, High Performance Operational Amplifiers April 1993 Features D escrip tio n Low NoIm . 4.3nV/VHz Low noise and high performance are key words describing HA-5102/04/