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Rochester Electronics LLC RF1S25N06SM N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RF1S25N06SM	Bulk			377	1 - 10 - 100 - 1000 $0.80 10000 $0.80	Buy Now
Rochester Electronics LLC RF1S25N06SM9A N-CHANNEL POWER MOSFET
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DigiKey	RF1S25N06SM9A	Bulk			358	1 - 10 - 100 - 1000 $0.84 10000 $0.84	Buy Now
Rochester Electronics LLC RF1S25N06SMR4643 MOSFET N-CH 60V 25A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RF1S25N06SMR4643	Bulk			377	1 - 10 - 100 - 1000 $0.80 10000 $0.80	Buy Now
Harris Semiconductor RF1S25N06 Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RF1S25N06		400		1	1 - 10 - 100 $0.48 1000 $0.39 10000 $0.35	Buy Now
Harris Semiconductor RF1S25N06SM Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RF1S25N06SM		3,005		1	1 - 10 - 100 $0.77 1000 $0.64 10000 $0.57	Buy Now

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F1S25N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: HAFRFRIS RFP25N06, F1S25N06, F1S25N06SM S E M I C O N D U C T O R 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature	OCR Scan	RFP25N06, RF1S25N06, RF1S25N06SM 55e-10 1e-30 04e-3 04e-6) 85e-3 77e-5)	PDF
F1S25N06 Abstract: AN9321 RF1S25N06SM RF1S25N06SM9A RFP25N06 TB334 F 407 Diode F1S25N Contextual Info: RFP25N06, F1S25N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding	Original	RFP25N06, RF1S25N06SM TA09771. F1S25N06 AN9321 RF1S25N06SM RF1S25N06SM9A RFP25N06 TB334 F 407 Diode F1S25N	PDF
F1S25N06 Abstract: AN7254 AN7260 AN9321 RF1S25N06 RF1S25N06SM RF1S25N06SM9A RFP25N06 Contextual Info: RFP25N06, F1S25N06, F1S25N06SM S E M I C O N D U C T O R 25A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 25A, 60V SOURCE DRAIN GATE • rDS ON = 0.047Ω • Temperature Compensating PSPICE Model	Original	RFP25N06, RF1S25N06, RF1S25N06SM O-220AB 175oC O-262AA RF1S25N06SM 1e-30 F1S25N06 AN7254 AN7260 AN9321 RF1S25N06 RF1S25N06SM9A RFP25N06	PDF
Contextual Info: ASSESS? RFP25N06, F1S25N06, F1S25N06SM 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti	OCR Scan	RFP25N06, RF1S25N06, RF1S25N06SM 1e-30 04e-3 04e-6) 85e-3 77e-5) 35e-3 77e-6)	PDF
F1S25N Abstract: F1S25N06 Contextual Info: RFP25N06, F1S25N06, F1S25N06SM ffì HAFURIS S E M I C O N D U C T O R 25A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages J E D E C T O -2 2 0 A B • 25A, 60V • r DS ON = 0 .0 4 7 U • Temperature Compensating PSPICE Model	OCR Scan	RFP25N06, RF1S25N06, RF1S25N06SM RF1S25N06SM F1S25N F1S25N06	PDF
5n06 Abstract: F1S25N06 302 s1b diode Contextual Info: RFP25N06, F1S25N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs [ /Title RFP2 5N06, RF1S2 5N06S M /Subject (25A, 60V, 0.047 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB	Original	RFP25N06, RF1S25N06SM 5N06S O220AB O263AB 5n06 F1S25N06 302 s1b diode	PDF
Contextual Info: in t e r r ii RFP25N06, F1S25N06SM D a ta S h e e t 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives	OCR Scan	RFP25N06, RF1S25N06SM TA09771. RFP2SN06, RF1S25N06SM AN7254 AN7260.	PDF
F1S25N06 Abstract: RF1S25N06 RF1S25N06SM RF1S25N06SM9A RFP25N06 TB334 183E-9 Contextual Info: RFP25N06, F1S25N06, F1S25N06SM Data Sheet January 2002 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs Features • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives	Original	RFP25N06, RF1S25N06, RF1S25N06SM TA09771. F1S25N06 RF1S25N06 RF1S25N06SM RF1S25N06SM9A RFP25N06 TB334 183E-9	PDF
RFP25N06 Contextual Info: RFP25N06, F1S25N06, F1S25N06SM HARRIS S E M I C O N D U C T O R 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature	OCR Scan	RFP25N06, RF1S25N06, RF1S25N06SM TA09771. 047i2 32e-13 72e-3 56e-3 13e-6 18e-9 RFP25N06	PDF
F1S25N06 Abstract: 183E-9 302 s1b diode 585E-3 45E-9 Contextual Info: RFP25N06, F1S25N06, F1S25N06SM S E M I C O N D U C T O R 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 25A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature	Original	RFP25N06, RF1S25N06, RF1S25N06SM TA09771. 175oMOS 1e-30 04e-3 04e-6) 85e-3 77e-5) F1S25N06 183E-9 302 s1b diode 585E-3 45E-9	PDF