RFK4 Search Results

Contextual Info: 4302271 00S4453 42t • HAS RFK45N05 H a r r is RFK45N06 N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Features Package T O -2 0 4 A E • 45 A , 5 0 V and 6 0 V • l'DS on = 0 .0 4 0 ÎÎ • S O A is P o w er-D issip atio n Lim ited

diode RA 225 R

Abstract: 45N05 rfk45n ld225 RFK45N05
Contextual Info: RFK45N05 RFK45N06 2 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u s t 1991 Package Features T O -20 4 A E • 45A, 50V and 60V • r D S o n ) = 0 . 0 4 0 Î Î • SOA is Power-Dlssipation Limited DRAIN (FLANGE) f SOURCE

RFK45N05

Abstract: H138 RFK45N06 rca 7139 37143 IDI TRANSISTORS
Contextual Info: Standard Power MOSFETs RFK45N05, RFK45N06 File N um ber N-Channel Enhancement-Mode Power Field-Effect Transistors 1498 45 A, 50 V - 60 V rüs on = 0.040 fi Features: • SOA is power-dissipation limited m Nanosecond switching speeds ■ Linear transfer characteristics

IRFK4J350

Abstract: ior e78996 3gu diode
Contextual Info: INT ERNATIONAL RE CTIFIER bSE D • 4Û55452 DDlb261 471 ■ INR Bulletin E27106 International îïqrI R atifier • • • • >RFK4H350,RFK4J350 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration High Current Capability. UL recognised E78996.

ib5 zener

Abstract: IRFK4H150 E78996 rectifier module IRFK4H151 welder mosfet 446B F-46
Contextual Info: HE I MÖ55452 00G100Q â I Data Sheet No. PD-9.446B I NT ERNATI ONAL RECTIFIER INTERNATIONAL RECTIFIER I« R T -39-27 RECOGNIZED HEXPAK POWER MODULE RFK4H150 RFK4H151 F ite no E7Ö996 Isolated Base Power HEXFET Parallel Assembly Features: 100 Volt, 14 mQ HEXPAK

buz11

Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
Contextual Info: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

PF0414B

Abstract: Hitachi DSA00103 BLO1RN1-A62-001
Contextual Info: PF0414B MOS FET Power Amplifier Module for DCS 1800 Handy Phone ADE-208-432D Z 5th Edition Jan. 2001 Application For DCS 1800 class1 1710 MHz to 1785 MHz. Features • • • • • 3stage amplifier : 0 dBm input Lead less thin & small package : 2 mm Max & 0.2 cc

IRF722P

Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313

4311 mosfet transistor

Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760

TP8N10

Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI

ta948

Abstract: RFH45N06 RFH45N05 18216 RFK45N05
Contextual Info: 3875081 G E SOLID STATE Standard Power MOSFETs _ □1 01E 18209 D È j 3ö?S0äl ÜLUßacn 2 RFH45N05, RFH45N06 D T ’5 ? ’'/3 - File N u m b e r 1635 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

1RFK4H250

Abstract: ior e78996 IRFK4H250 IRFK4J250 E27105
Contextual Info: Bulletin E27105 • ■■ ■ international 1 jr M a i / M - A l r “| / J* ir t f -Ä Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • nign ourreni uapaointy. • UL recognised E78996. • Electrically Isolated Base Plate. • Easy Assembly into Equipment

PT740 AB

Abstract: 095G Unitechno rfpak fuji semiconductors manual 652B0082211-002 ADE-410-001J BP-108 EDR7315 QP4-064050-002-A
Contextual Info: Hitachi Semiconductor Package Data Book ADE-410-001J 11th Edition March/2002 Semiconductor & Integrated Circuits Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

PF01411B

Abstract: PF01411 hitachi tantalum capacitor Hitachi DSA00231
Contextual Info: PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434C Z 4th Edition Jan. 2001 Application • For E-GSM class4 880 MHz to 915 MHz • For 3.5 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc

PA 0016 PIONEER

Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Contextual Info: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

2SC5770

Abstract: 2SC5769 2SC5702 2SC5700 BFE 75A rfk110 2SC5757 2SC5543 126FM 2SC5555
Contextual Info: 2001.2 高周波バイポーラトランジスタシリーズ High-Frequency Bipolar Transister Series 主要用途 特長とメリット - Main Applications - •携帯機器のVCO VoltageControlledOscillator ■低位相雑音 Excellent phase noise characteristics