RFA100 Search Results

RFH75N05, RFA100N05

Abstract: RFH75N05 RFA100N05 AN-7260 an7254 AN7260 rca application notes ISD 100 h75n05cf5
Contextual Info: Preview Products RFH75N05, RFA100N05 File Number 2275 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs 75 A and 100 A, 50 V N -CH A N N EL E N H A N C E M EN T MODE fosfori) = 0 .0 1 0 O Features: • Single pulse avalanche energy rated

PWC PW-2

Abstract: HTC Korea metal film fused resistor 125k ohm Molded Axial Leaded capacitor sn 8951 A rbr56 PFC-W2010 rm1206 resistor metal GLAZE 120 ohm 2 1W IRC rlr20
Contextual Info: Short Form Catalog Resistive and Sensor Products Technology for Every Frontier 2 IRC has been an innovative leader in the design, development and manufacture of passive components for more than eighty years. What IRC’s proven resistor technology gives you the performance

hfr 20w

Abstract: microwave transmitter 10GHz military resistors catalog datasheet A1206 Fixed Attenuators Surface Mount 30dB microwave product catalog 10ghz attenuator circulator 2.3 2.7 GHz Surface Mount 10 GHz Isolator A1206
Contextual Info: Microwave/High Frequency Product Catalog Microwave/High Frequency Product Catalog November 2008 A subsidiary of TT electronics plc IRC Advanced Film Division IMPEDANCE CONVERTER ATTENUATORS TERMINATORS Microwave/High Frequency Chip Product Selection Guide

4311 mosfet transistor

Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760

Contextual Info: POWER COAXIAL ATTENUATORS DC TO 2.4 GHz ELECTRO TECHNIK RFA250NFFdB PERFORMANCE SPECIFICATIONS: Frequency Range: DC to 2.4 GHz VSWR: 1.25:1 - DC to 1.0 GHz 1.35:1 - 1.0 to 2.4 GHz Attenuation Value: 3 to 30 dB Attenuation Accuracy: ±.30 dB or 3% DC to 1.0 GHz

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

Contextual Info: POWER COAXIAL ATTENUATORS DC TO 2.4 GHz ELECTRO TECHNIK PERFORMANCE SPECIFICATIONS: RFA30NFFdB Frequency Range: DC to 2.4 GHz VSWR: 1.15:1 - DC to 1.0 GHz 1.35:1 - 1.0 to 2.4 GHz Attenuation Value: 3 to 30 dB Attenuation Accuracy: ±.30 dB or 3% Peak Power:

RFA1000

Contextual Info: High Frequency Surface Mount Attenuators RFAXXX-0 Series • RoHS compliant • Power dissipation up to 150W • High frequency operation up to 3GHz The RFAXXX-0 series power attenuator has a low VSWR from DC to 3GHz. High frequency performance combined with high power dissipation make this an ideal RF power attenuator. Typical applications are RF and

RHR30120

Abstract: RCA1A15 RCA1A11 RCA1C08 RC1566 rc3154 RCA1A09 RCA1A18 RCA1C13 RCA3055
Contextual Info: • P art N u m b e r M fr Qty/Note 7600345 P a rt N u m b e r □ □□□37 6 M fr -no Qty/Note ■ P a rt N u m b e r M fr Qty/Nol RC1466 REI CALL RC6S5TL/R REI 179 REF03GP RC1469 ANA 167 REI CALL RC668L REI 158 REF03GS RC1472U ANA 71 REI 390 RC78T12ACK UT

RFA100N05E

Abstract: GC200 100N05E ff048
Contextual Info: ffl h a r r is J a n u a ry 1 9 9 3 RFA 100N05E N-Channel Enhancem ent-M ode Power Field-Effect Transistor MegaFET Package Features • 100A, 50V • rDS(on) = 0 -0 0 8 fi D R A IN • Electrostatic Discharge Rated • UIS SOA Rating Curve (Single Pulse)

Contextual Info: • 4305571 00544A5 T3b ■ H a r r i s January 1993 HAS R F A 1 N 5 E N-Channel Enhancement-Mode Power Field-Effect Transistor MegaFET Package Features • 1 0 0 A, 50 V • rD S(on) = 0 .0 0 8 f l D R A IN • E lectro static D ischarge Rated • UiS S O A Rating C urve (Single Pulse)

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

RFA150

Contextual Info: High Frequency Surface Mount Attenuators IRC Advanced Film Division RFAXXX-0 Series • RoHS Compliant • Power dissipation to 150W • High frequency operation to 3GHz • Flanged Package for heat sink mounting The RFAXXX-0 series power attenuator has a low VSWR from DC to 3GHz. High frequency performance

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning: