RF TRANSISTOR SOT23 5 Search Results
RF TRANSISTOR SOT23 5 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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LXMSJZNCMH-225 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag | |||
LXMS21NCMH-230 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag | |||
LBAA0QB1SJ-295 | Murata Manufacturing Co Ltd | SX1262 MODULE WITH OPEN MCU | |||
GRM-KIT-OVER100-DE-D | Murata Manufacturing Co Ltd | 0805-1210 over100uF Cap Kit | |||
LBUA5QJ2AB-828 | Murata Manufacturing Co Ltd | QORVO UWB MODULE |
RF TRANSISTOR SOT23 5 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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transistor c 3181
Abstract: ML SOT23 TRANSISTOR 3182
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650MHz 500MHz FMMTH10 100MHz 500MHz, 300ns. transistor c 3181 ML SOT23 TRANSISTOR 3182 | |
RF TRANSISTOR SOT23 5
Abstract: transistor 20 dB 14 ghz sot23 Bipolar NPN Transistor Bipolar Transistor npn sot23 BFR92 BFR92A BFR93 BFR93A BFS17A transistor with gain 10
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BFS17A BFR92 BFR93A RF TRANSISTOR SOT23 5 transistor 20 dB 14 ghz sot23 Bipolar NPN Transistor Bipolar Transistor npn sot23 BFR92 BFR92A BFR93 BFR93A BFS17A transistor with gain 10 | |
SOT23 W1P NXPContextual Info: DISCRETE SEMICONDUCTORS DAT BFT92 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF |
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BFT92 MSB003act R77/02/pp10 SOT23 W1P NXP | |
BFR93 application noteContextual Info: DISCRETE SEMICONDUCTORS DAT BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF |
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BFT93 R77/02/pp10 BFR93 application note | |
BFT93
Abstract: BFR93 application note bfr93 MSB003 BFR93A
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BFT93 R77/02/pp10 BFT93 BFR93 application note bfr93 MSB003 BFR93A | |
BFT25Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT25 NPN 2 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF |
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BFT25 MSB003 R77/02/pp10 BFT25 | |
BFR91 philipsContextual Info: bbS3T31 0025175 2S4 M A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 5 GHz wideband transistor Product specification b7E » £ BFR93 DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The |
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bbS3T31 BFR93 ON4186) BFT93. BFR91 philips | |
E2p 93 transistor
Abstract: E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A
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BFS17A E2p 93 transistor E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A | |
transistor P1P
Abstract: BFR92 p1p transistor BFT92 Philips MBB BFR90 amplifier J31 transistor BFR90 code p1p
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bbS3T31 BFR92 BFT92. transistor P1P BFR92 p1p transistor BFT92 Philips MBB BFR90 amplifier J31 transistor BFR90 code p1p | |
684 k 100
Abstract: BFT93 BFR93 BFR93A TRANSISTOR D 1765 lc 945 p transistor NPN
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BFT93 BFR93 BFR93A. 684 k 100 BFT93 BFR93A TRANSISTOR D 1765 lc 945 p transistor NPN | |
BFR520
Abstract: 900MHZ
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BFR520 OT-23 BFR520 06-Feb-07 OT-23 900MHZ | |
Contextual Info: SOT23 NPN SILICON PLANAR RF TRANSISTOR FMMTH10 ISSU E 2 - NOVEMBER 1995 FEATU RES * High f-^eöOMHz * M a xim u m capacitance 0.7pF * K Low noise < 5dB at 500M H z P A R T M A R K IN G D E T A IL - 3EZ SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L Collector-Emitter Voltage |
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FMMTH10 100MHz 500MHz, ci34c | |
TAG 8907
Abstract: lc 945 p transistor BFT93 1348 transistor B 1446 transistor B 1449 transistor 2F PNP SOT23 lc 945 transistor SiS 671 BFR93
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711005b BFT93 BFR93 BFR93A. TAG 8907 lc 945 p transistor BFT93 1348 transistor B 1446 transistor B 1449 transistor 2F PNP SOT23 lc 945 transistor SiS 671 | |
ice 0565
Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 137 transistor bc 207 npn 46644 transistors BC 548 BC 558 bc 331 TRANSISTOR BC 187 BC 557 npn TRANSISTOR BC 157
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THN6501S OT-23 THN6501S 00GHz 800GHz 000GHz 200GHz 400GHz 600GHz ice 0565 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 137 transistor bc 207 npn 46644 transistors BC 548 BC 558 bc 331 TRANSISTOR BC 187 BC 557 npn TRANSISTOR BC 157 | |
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Contextual Info: 62 7 BFU530A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU530A is part of the BFU5 family of transistors, suitable for small signal to medium |
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BFU530A BFU530A AEC-Q101 | |
PH11 SOT23
Abstract: BFS17 TRANSISTOR C 1177
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00252Sb BFS17 MEA393 MEA397 PH11 SOT23 BFS17 TRANSISTOR C 1177 | |
44606
Abstract: B 13003 121-351 7654 ic pt 2358 THN6301S 76231 pt 2358 56374 57290
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THN6301S OT-23 THN6301S 10GHz VCEO00GHz 000GHz 200GHz 400GHz 600GHz 44606 B 13003 121-351 7654 ic pt 2358 76231 pt 2358 56374 57290 | |
Contextual Info: • 1^53=131 QDESSSti 283 H A P X Philips Semiconductors Product specification ANER PHILIPS /DISC RE TE b?E NPN 1 GHz wideband transistor DESCRIPTION BFS17 e PINNING NPN transistor In a plastic SOT23 envelope. It is intended for a wide range of RF applications, such as mixers and |
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BFS17 MEA393 MEA397 | |
Contextual Info: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF |
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BFT93 BFR93 BFR93A. | |
FMMTH10
Abstract: DSA003704
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FMMTH10 650MHz 500MHz 100MHz 500MHz, FMMTH10 DSA003704 | |
Contextual Info: bbsa^ai DD2S3bD b=i5 N AUER PHILIPS/DISCRETE NPN 2 GHz wideband transistor Philips Semiconductors DESCRIPTION • APX_ Product specification b?E D £ BFT25 PINNING NPN transistor in a plastic SOT23 envelope. PIN It Is primarily intended for use in RF low power amplifiers, such as in |
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BFT25 | |
cq 636 g transistorContextual Info: bbsa'oi Philips Semiconductors goeses^ n s • APX N AMER PHILIPS/D ISCR ETE NPN 3 GHz wideband transistor b?E Product specification D ^ BFS17A PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners. |
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BFS17A cq 636 g transistor | |
W1p TRANSISTOR
Abstract: transistor w1P SOT23 W1P w1p npn "W1P" W1P 65 transistor W1P 66 transistor W1p 69 BFT92 W1P 06
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7110fl2b BFT92 BFR92 BFR92A. W1p TRANSISTOR transistor w1P SOT23 W1P w1p npn "W1P" W1P 65 transistor W1P 66 transistor W1p 69 BFT92 W1P 06 | |
E2p 96 transistor
Abstract: BFS17 BFS17A MSB003
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711Dflgb BFS17A MSB003 E2p 96 transistor BFS17 |