RF TRANSISTOR SOT23 5 Search Results

transistor c 3181

Abstract: ML SOT23 TRANSISTOR 3182
Contextual Info: SOT23 NPN SILICON PLANAR RF TRANSISTOR FMMTH10 ISSUE 2 - NOVEMBER 1995 FEATURES * High fT=650MHz * * M axim um capacitance 0.7pF Low noise < 5dB at 500MHz PARTMARKING D E T A IL- Ml 3E2 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Emitter Voltage

RF TRANSISTOR SOT23 5

Abstract: transistor 20 dB 14 ghz sot23 Bipolar NPN Transistor Bipolar Transistor npn sot23 BFR92 BFR92A BFR93 BFR93A BFS17A transistor with gain 10
Contextual Info: BFS17A NPN Bipolar Silicon RF Transistor in plastic package SOT23 Attribute Value Configuration UOM NPN Function RF Package SOT23 VCEO max 15 V VCBO max 25 V VEBO max 2.5 V IC max 25 mA 200 mW Ptot max DC current gain Transition frequency min 20 @IE 2 mA @VCE

SOT23 W1P NXP

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT92 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

BFR93 application note

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF

BFT93

Abstract: BFR93 application note bfr93 MSB003 BFR93A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF

BFT25

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT25 NPN 2 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF

BFR91 philips

Contextual Info: bbS3T31 0025175 2S4 M A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 5 GHz wideband transistor Product specification b7E » £ BFR93 DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The

E2p 93 transistor

Abstract: E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A
Contextual Info: Philips Sem iconductors m ^ 5 3 ^ 3 1 □DE5£5c1 TTS BIAPX N AMER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION fc,7E Product specification J> ^ BFS17A PINNING NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF

transistor P1P

Abstract: BFR92 p1p transistor BFT92 Philips MBB BFR90 amplifier J31 transistor BFR90 code p1p
Contextual Info: m P hilips S em iconductors bbS3T31 N AMER DD2S1S2 757 H I A P X PHILIPS/DISCRETE _ . ._. Product specifigatjon b7E J> NPN 5 GHz wideband transistor £ BFR92 PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily Intended for use in RF wideband amplifiers and

684 k 100

Abstract: BFT93 BFR93 BFR93A TRANSISTOR D 1765 lc 945 p transistor NPN
Contextual Info: bbSBTBl 0 0 £5 3*15 TDM HIAPX — N AUER PHILIPS/DISCRETE b?E » PNP 5 GHz wideband transistor Philips Semiconductors — DESCRIPTION Product specification ^ BFT93 ^ PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

BFR520

Abstract: 900MHZ
Contextual Info: BFR520 NPN 9 GHz RF Wideband Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 SOT-23 FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. The transistor is encapsulated in a plastic SOT23 envelope.

Contextual Info: SOT23 NPN SILICON PLANAR RF TRANSISTOR FMMTH10 ISSU E 2 - NOVEMBER 1995 FEATU RES * High f-^eöOMHz * M a xim u m capacitance 0.7pF * K Low noise < 5dB at 500M H z P A R T M A R K IN G D E T A IL - 3EZ SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L Collector-Emitter Voltage

TAG 8907

Abstract: lc 945 p transistor BFT93 1348 transistor B 1446 transistor B 1449 transistor 2F PNP SOT23 lc 945 transistor SiS 671 BFR93
Contextual Info: Philips Semiconductors •■ 71 10 05 b d O b ^ h l S IS ■ P H IN Product specification PNP 5 GHz wideband transistor DESCRIPTION ^ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in

ice 0565

Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 137 transistor bc 207 npn 46644 transistors BC 548 BC 558 bc 331 TRANSISTOR BC 187 BC 557 npn TRANSISTOR BC 157
Contextual Info: THN6501S NPN Planer RF TRANSISTOR SOT-23 □ DESCRIPTION The THN6501S is a low Noise figure and good associated gain performance at UHF, VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT23 package □ FEATURES

Contextual Info: 62 7  BFU530A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU530A is part of the BFU5 family of transistors, suitable for small signal to medium

PH11 SOT23

Abstract: BFS17 TRANSISTOR C 1177
Contextual Info: • ^53^31 00252Sb 2 83 H A P X Philips Sem iconductors Product specification N AMER PHILIPS/DISCRETE b?E NPN 1 GHz wideband transistor DESCRIPTION c BFS17 PINNING NPN transistor In a plastic SOT23 envelope. It is intended for a wide range of RF applications, such as mixers and

44606

Abstract: B 13003 121-351 7654 ic pt 2358 THN6301S 76231 pt 2358 56374 57290
Contextual Info: THN6301S NPN Planer RF TRANSISTOR SOT-23 □ DESCRIPTION The THN6301S is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT23 package □ FEATURES

Contextual Info: • 1^53=131 QDESSSti 283 H A P X Philips Semiconductors Product specification ANER PHILIPS /DISC RE TE b?E NPN 1 GHz wideband transistor DESCRIPTION BFS17 e PINNING NPN transistor In a plastic SOT23 envelope. It is intended for a wide range of RF applications, such as mixers and

Contextual Info: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

FMMTH10

Abstract: DSA003704
Contextual Info: SOT23 NPN SILICON PLANAR RF TRANSISTOR FMMTH10 ISSUE 2 – NOVEMBER 1995 FEATURES * High fT=650MHz * Maximum capacitance 0.7pF * Low noise < 5dB at 500MHz TYPICAL CHARACTERISTICS 200 1.0 V+-=-10V -55°C 50 -55°C - Volts 100°C 0.6 PARTMARKING DETAIL – 0.4

Contextual Info: bbsa^ai DD2S3bD b=i5 N AUER PHILIPS/DISCRETE NPN 2 GHz wideband transistor Philips Semiconductors DESCRIPTION • APX_ Product specification b?E D £ BFT25 PINNING NPN transistor in a plastic SOT23 envelope. PIN It Is primarily intended for use in RF low power amplifiers, such as in

cq 636 g transistor

Contextual Info: bbsa'oi Philips Semiconductors goeses^ n s • APX N AMER PHILIPS/D ISCR ETE NPN 3 GHz wideband transistor b?E Product specification D ^ BFS17A PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.

W1p TRANSISTOR

Abstract: transistor w1P SOT23 W1P w1p npn "W1P" W1P 65 transistor W1P 66 transistor W1p 69 BFT92 W1P 06
Contextual Info: P hilips S em iconductors l i 7 1 1 0 f l2 b 0 0 ^^354 3 SÖ H IP H IN Product specification PNP 5 GHz wideband transistor DESCRIPTION ^ BFT92 PINNING PNP transistor in a plastic SOT23 envelope. DESCRIPTION PIN It is primarily intended or use In RF wideband amplifiers, such as in

E2p 96 transistor

Abstract: BFS17 BFS17A MSB003
Contextual Info: Philips Sem iconductors iH 7 1 1 Q f l2 b 0 O b '"! 2 2 5 L7b I B PH I N Product specification NPN 3 GHz wideband transistor £ BFS17A TYP. MAX. PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.