RF TRANSISTOR MAR 8 Search Results

Contextual Info: Preliminary Data Sheet 2SC5508 NPN SILICON RF TRANSISTOR R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • • • • • <R> Ideal for low-noise, high-gain amplification applications

MAR 618 transistor

Abstract: MAR 737 transistor d 1557 RD06HHF1 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz

MAR 618 transistor

Abstract: MAR 737 RD06HVF1 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

AP2202

Abstract: AP2202K-ADJTR AP2202K-ADJTRE1 marking R22B
Contextual Info: Data Sheet 150mA RF ULDO REGULATOR AP2202 General Description Features The AP2202 is a 150mA ULDO regulator which provides very low noise, ultra low dropout voltage typically 165mV at 150mA , very low standby current (1µA maximum) and excellent power supply ripple

smd JH transistor

Abstract: transistor smd z3 transistor SMD Z2 smd transistor z4 capacitor tantalum smd Transistor z1 smd CBD46 34S2 MDB150 M3D438
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLF1043 UHF power LDMOS transistor Product specification Supersedes data of 2002 November 11 2003 Mar 13 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1043 PINNING - SOT538A FEATURES • Typical 2-tone performance at a supply voltage of 26 V

Contextual Info: RF RF2302 Preliminary MICRO DEVICES BROADBAND LINEAR VARIABLE GAIN AM PLIFIER T y p ic a l A p p lic a tio n s • CDMA Cellular/PCS and JCDMA Systems • Wireless Local Loop Systems • TDMA Cellular/PCS Systems • Wideband CDMA Systems • GSM Systems • PDC Systems 950MHz and 1450MHz

300TYP

Abstract: AP2213
Contextual Info: Data Sheet 500mA LOW NOISE LDO REGULATOR AP2213 General Description Features The AP2213 is a 500mA output current fixed voltage regulator which provides low noise, very low dropout voltage typically 350mV at 500mA , very low standby current (1µA maximum) and excellent power

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 8, 2/2012 MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range

Contextual Info: RF RF2302 Preliminary MICRO DEVICES BROADBAND LINEAR VARIABLE GAIN AM PLIFIER T y p ic a l A p p lic a tio n s • CDMA Cellular/PCS and JCDMA Systems • Wireless Local Loop Systems • TDMA Cellular/PCS Systems • Wideband CDMA Systems • GSM Systems • PDC Systems 950MHz and 1450MHz

T491D106K010AT

Abstract: MRF377H PCN13170 nippon capacitors dvbt dvbt transmitter MRF377 T491D106K050at 3A412 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 2, 3/2009 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377HR3 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

Contextual Info: Document Number: MRF377H Rev. 2, 3/2009 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

Contextual Info: SD2951-10 250 W, 50 V HF/VHF DMOS transistor Datasheet - target specification Description The SD2951-10 is an N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 230 MHz. It offers 25% lower RDS ON than the industry standard,

37548G1

Contextual Info: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 7548 Group REJ03B0210-0200 Rev.2.00 Mar 15, 2007 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION The 7548 Group is the 8-bit microcomputer based on the 740

Contextual Info: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 7549 Group REJ03B0202-0200 Rev.2.00 Mar 05, 2007 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION The 7549 Group is the 8-bit microcomputer based on the 740

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3012NT1 Rev. 3, 3/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3012NT1 Broadband High Linearity Amplifier The MMG3012NT1 is a General Purpose Amplifier that is internally input matched and internally output matched. It is designed for a broad

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3007NT1 Rev. 3, 3/2007 Heterojunction Bipolar Transistor InGaP HBT Broadband High Linearity Amplifier MMG3007NT1 The MMG3007NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A,

GRM55DR61H106KA88B

Abstract: 2508051107Y0 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P23190HR6 J3001
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 2, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

Nordmende

Abstract: Funkamateur Kathrein Antennas ECC85 TBA810 AMPLIFIER TBA810 Kathrein LFPAK package 5 ferrite rod antenna SiC PIN diode Pspice model
Contextual Info: Appendix RF Manual 7th edition November 2005 date of release: November 2005 document order number: 9397 750 15371 Contents 1. Thermal design considerations for SMD discretes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4

sd2931-10w

Abstract: marking code oz 09-Sep-2004
Contextual Info: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures

HD64F38124

Abstract: REJ09B0042-0700 Hitachi DSA00285 ADE-702-161 Equivalent tlp 759 si 18752 REJ09B0042 transistor mark code 1N6 Nippon capacitors
Contextual Info: REJ09B0042-0700 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. H8/38024, H8/38024S, H8/38024R, H8/38124 Group

transistor pcr 606 j

Abstract: transistor pcr 606 j circuits pcr 606 transistor bosch edc 17 MPC5643L BOSCH ABS 8.1 transistor pcr 606 pcr 606 g transistor bosch edc 16 schematic diagram Permanent Magnet brushless DC
Contextual Info: Freescale Semiconductor Data Sheet: Advance Information Document Number: MPC5643L Rev. 8.1, 5/2012 MPC5643L Qorivva MPC5643L Microcontroller Data Sheet • • • • • • • High-performance e200z4d dual core — 32-bit Power Architecture technology CPU

14D471

Contextual Info: User’s Manual 16 M16C/6S1 Group User’s Manual: Hardware RENESAS MCU M16C Family / M16C/60 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

ZENER MARKING C8 ST

Abstract: CAPACITOR 64 680 4J diode t25 4 L5 SD2932 neosid RG316-25 vk200 ferrite bead SD2932W diode marking 100b
Contextual Info: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metalized N-channel MOS

Electric Double Layer Capacitors, Radial Lead Type

Contextual Info: . E7.6 Contents 1. 2. Introduction Principles and features of Gold capacitors 2-1 What are electric double layer capacitors? 2-2 Construction and principle of electric double layer capacitor 2-3 Equivalent circuit 2-4 Electrical characteristics of electric double layer capacitor