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Contextual Info: Preliminary Data Sheet 2SC5508 NPN SILICON RF TRANSISTOR R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • • • • • <R> Ideal for low-noise, high-gain amplification applications
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Contextual Info: Preliminary Data Sheet 2SC5509 NPN SILICON RF TRANSISTOR R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • • • • • <R> Ideal for medium output power amplification
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RF transistor marking IN SOT-89
Abstract: RF transistor marking H SOT-89 RF transistor marking "SOT-89" RF transistor Type code SOT-89
Contextual Info: TSB1424 Low Vcesat PNP Transistor SOT-89 SOT-23 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -20V BVCEO -20V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.) Complementary part with TSD2150
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tsb1424ot-89ot-23-100ma+7tsd2150tsb1424cytsb1424cxrf transistor marking in sot-89rf transistor marking h sot-89rf transistor marking "sot-89rf transistor type code sot-89
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MAR 618 transistor
Abstract: MAR 737 transistor d 1557 RD06HHF1 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
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rd06hhf130mhzrd06hhf1-thmar 618 transistor+8mar 737transistor d 1557transistor 45 f 123rf transistor mar 8mitsubishi rf power mos fetrd06hhf1-101marking transistor 737transistor mar 231
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MAR 618 transistor
Abstract: MAR 737 RD06HVF1 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
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rd06hvf1175mhzrd06hvfthmar 618 transistor+8mar 737transistor d 1557transistor mar 618how to use mos transistor in power circuitrf transistor mar 8rd06hvf1-101100ohmmitsubishi rf power mos fet
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RD16HHF1
Abstract: RD16HHF1-101 RD 15 hf mitsubishi transistor d 1564 MITSUBISHI RF POWER MOS FET MITSUBISHI RF POWER MOS FET rd 100 RD16HHF Transistor D 1747 MAR 637 rf transistor mar 8
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.
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rd16hhf130mhzrd16hhf1-1thrd16hhf1-101+8rd 15 hf mitsubishitransistor d 1564mitsubishi rf power mos fetmitsubishi rf power mos fet rd 100rd16hhftransistor d 1747mar 637rf transistor mar 8
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MAR 703 MOSFET TRANSISTOR
Abstract: RD15HVF1 RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line 100OHM rd15hvf11 rd15hvf transistor 1346
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+/-0.4 High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz
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rd15hvf1175mhz520mhz175mhz520mhz+9mar 703 mosfet transistorrd15hvf1-101mitsubishi rf power mos fetd 1413 transistormicro strip line100ohmrd15hvf11rd15hvftransistor 1346
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MRC039
Abstract: ST MRC039 transistor Gigahertz BFQ67T SC-75 MRC041 mrc043 "marking Code" V2 Marking code V2
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFQ67T NPN 8 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Mar 06 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T FEATURES DESCRIPTION • High power gain
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RA60H1317M1A
Abstract: RA60H1317M1 RF MOSFET MODULE RF MODULE RA60H1317M1A rf transistor mar 8 MITSUBISHI marking example 174MHZ marking code transistor ND F1361 MAR 601 transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to
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ra60h1317m1a136-174mhz60-watt174-mhz+9ra60h1317m1rf mosfet modulerf module ra60h1317m1arf transistor mar 8mitsubishi marking example174mhzmarking code transistor ndf1361mar 601 transistor
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NTC 220-11
Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,
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BLV909
Abstract: AN98017 BLV2042 BLV904
Contextual Info: APPLICATION NOTE Mounting consideration for SOT409 ceramic SO-8 devices AN98017 Philips Semiconductors Mounting consideration for SOT409 (ceramic SO-8) devices CONTENTS 1 INTRODUCTION 2 MOUNTING OF SOT409B DEVICES 3 HEATFLOW IN APPLICATION 4 IMPORTANT FACTORS FOR THERMAL
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MGH80
Abstract: TRANSISTOR SMD catalog AN98017 AN98020 AN98026 BLV909 SMD TRANSISTOR
Contextual Info: APPLICATION NOTE 9 W Linear Class-AB Amplifier with the BLV909 for 935 − 960 MHz AN98020 Philips Semiconductors 9 W Linear Class-AB Amplifier with the BLV909 for 935 − 960 MHz CONTENTS 1 INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER BACKGROUND 4 AMPLIFIER PERFORMANCE
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AP2202
Abstract: AP2202K-ADJTR AP2202K-ADJTRE1 marking R22B
Contextual Info: Data Sheet 150mA RF ULDO REGULATOR AP2202 General Description Features The AP2202 is a 150mA ULDO regulator which provides very low noise, ultra low dropout voltage typically 165mV at 150mA , very low standby current (1µA maximum) and excellent power supply ripple
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smd JH transistor
Abstract: transistor smd z3 transistor SMD Z2 smd transistor z4 capacitor tantalum smd Transistor z1 smd CBD46 34S2 MDB150 M3D438
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLF1043 UHF power LDMOS transistor Product specification Supersedes data of 2002 November 11 2003 Mar 13 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1043 PINNING - SOT538A FEATURES • Typical 2-tone performance at a supply voltage of 26 V
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BGF425W
Abstract: BFG425W BFG400W BFC425W RT4000 BLV2046 HP 2531 AN98024 BGY1816 BGY1916
Contextual Info: APPLICATION NOTE 50 W base station power amplifier for DCS1800 and PCS1900 AN98024 Philips Semiconductors 50 W base station power amplifier for DCS1800 and PCS1900 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 PRE-DRIVER BFG425W 4 DRIVER (BGY1816/BGY1916) 5 FINAL STAGE (BLV2046)
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400M
Abstract: 430M 470M RA30H4047M1
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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lt 7210
Abstract: 470M RA30H4552M1 RA30H4552M1-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4552M1 RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to
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SOT467
Abstract: nxp rf power transistor shortform BLF2043F,112
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2043F UHF power LDMOS transistor Product specification Supersedes data of 2000 Oct 19 2002 Mar 05 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043F FEATURES PINNING - SOT467C • High power gain
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smd-transistor DATA BOOK
Abstract: SMD Transistor rt/duroid 6006 TRANSISTOR SMD catalog transistor SMD DK Philips 2222-581 smd-transistor -1.am Duroid 6006 SMD Transistor 6f smd transistor l6
Contextual Info: APPLICATION NOTE 4 W Linear Class-AB amplifier with the BLV2042 for 1930 −1990 MHz AN98018 Philips Semiconductors 4 W Linear Class-AB amplifier with the BLV2042 for 1930 −1990 MHz CONTENTS 1 INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER DESCRIPTION
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104 k5k capacitor
Abstract: k5k 104 capacitor k5k 104 k5k capacitor marking EH4 K5C capacitor TRANSISTOR K5C AP2210 E5K MARKING marking E5F
Contextual Info: Data Sheet 300mA RF ULDO REGULATOR AP2210 General Description Features The AP2210 is a 300mA ULDO regulator which provides very low noise, ultra low dropout voltage typically 250mV at 300mA , very low standby current (1µA maximum) and excellent power supply ripple
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PM7520
Abstract: RESISTOR CR25 RESISTOR pr37 RESISTOR CR25 philips CR25 resistor PM3260 HP8620 PR37 RESISTOR blw32 s parameter philips resistor CR25
Contextual Info: APPLICATION NOTE Wide-band linear power amplifiers 470 − 860 MHz with the transistors BLW32 and BLW33 ECO7806 Philips Semiconductors Wide-band linear power amplifiers (470 − 860 MHz) with the transistors BLW32 and BLW33 CONTENTS 1 ABSTRACT 2 INTRODUCTION
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TRANSISTOR ww1
Abstract: mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 BLF548 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350
Contextual Info: APPLICATION NOTE 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET AN98021 Philips Semiconductors 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET CONTENTS 1 INTRODUCTION 2 DESIGN CONSIDERATIONS 3 AMPLIFIER CONCEPT 4 INPUT CIRCUITRY
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blf548an98021sca57transistor ww1+7mosfet handbooktrimmer 2-18 pfww1 45 transistortrafo toroidalkdi-ppt820-75-34814 mosfet chipphilips catalog potentiometer 2322 350
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BLV 730
Abstract: COE82101 BLY90 BLW60 BLV25 BLW89 rf transformer philips india SC-10 amplifier Blw89 transistor blv 33 transistor
Contextual Info: TECHNICAL PUBLICATION Considerations on efficiency of the RF power transistors in the different classes of operation COE82101 Philips Semiconductors Considerations on efficiency of the RF power transistors in the different classes of operation CONTENTS 1 SUMMARY
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BLW898
Abstract: tv schematic diagram PHILIPS transposers MGH829 linear amplifier 470-860 AN98015 china tv schematic diagram 470-860 mhz Power amplifier w
Contextual Info: APPLICATION NOTE A broadband 3 W amplifier for band IV/V TV transposers based on the BLW898 AN98015 Philips Semiconductors A broadband 3 W amplifier for band IV/V TV transposers based on the BLW898 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 AMPLIFIER ELECTRICAL DESIGN OBJECTIVES
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