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    BFP650 Search Results

    BFP650 Datasheets (15)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BFP650
    Infineon Technologies NPN Silicon Germanium RF Transistor Original PDF 211.85KB 7
    BFP650
    Infineon Technologies NPN Silicon Germanium RF Transistor Original PDF 206.41KB 7
    BFP650
    Infineon Technologies Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-SOT343-4; VCEO (max): 4.0 V; IC(max): 150.0 mA; Ptot (max): 500.0 mW; fT (typ): 37.0 GHz; F (typ): 0.8 dB; Original PDF 553.51KB 9
    BFP650E6327
    Infineon Technologies Original PDF 184.94KB 6
    BFP650E6327
    Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 4.5V SOT-343 Original PDF 29
    BFP650E6327HTSA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 4.5V SOT-343 Original PDF 1.14MB
    BFP650E6825
    Infineon Technologies TRANS GP BJT NPN 4V 0.15A 4 Original PDF 89.11KB 9
    BFP650E6826
    Infineon Technologies TRANS GP BJT NPN 4V 0.15A 4 Original PDF 89.11KB 9
    BFP650F
    Infineon Technologies Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-TSFP-4; VCEO (max): 4.0 V; IC(max): 150.0 mA; Ptot (max): 500.0 mW; fT (typ): 42.0 GHz; F (typ): 0.8 dB; Original PDF 127.97KB 7
    BFP 650F E6327
    Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 4.5V TSFP-4 Original PDF 549.17KB
    BFP650FE6327
    Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 4.5V TSFP-4 Original PDF 7
    BFP650FH6327
    Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 42GHZ 4.5V 4TSFP Original PDF 7
    BFP650FH6327XTSA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 42GHZ 4.5V 4TSFP Original PDF 549.17KB
    BFP650H6327
    Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 4V 150MA SOT343 Original PDF 29
    BFP650H6327XTSA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 4V 150MA SOT343 Original PDF 1.14MB
    SF Impression Pixel

    BFP650 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BFP650H6327XTSA1

    Trans RF BJT NPN 4V 0.15A 500mW 4-Pin SOT-343 T/R Automotive AEC-Q101
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical () BFP650H6327XTSA1 1,264 34
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    • 100 $0.22
    • 1000 $0.19
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    BFP650H6327XTSA1 1,070 11
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    • 100 $0.26
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    Avnet Americas BFP650H6327XTSA1 Tape & Reel 26 Weeks 3,000
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    Arrow Electronics () BFP650H6327XTSA1 Cut Strips 1,264 26 Weeks 1
    • 1 $0.30
    • 10 $0.24
    • 100 $0.22
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    BFP650H6327XTSA1 Cut Strips 1,070 26 Weeks 1
    • 1 $0.51
    • 10 $0.33
    • 100 $0.26
    • 1000 $0.23
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    Newark () BFP650H6327XTSA1 Tape & Reel 3,137 100
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    • 100 $0.31
    • 1000 $0.27
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    BFP650H6327XTSA1 Cut Tape 3,137 5
    • 1 -
    • 10 $0.38
    • 100 $0.31
    • 1000 $0.27
    • 10000 $0.27
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    BFP650H6327XTSA1 Tape & Reel 3,000
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    Bristol Electronics BFP650H6327XTSA1 32,882
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    TME BFP650H6327XTSA1 3,000
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    • 10000 $0.21
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    EBV Elektronik BFP650H6327XTSA1 48,000 27 Weeks 3,000
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    Win Source Electronics BFP650H6327XTSA1 45,420
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    • 1000 $0.27
    • 10000 $0.25
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    Infineon Technologies AG BFP 650 H6327

    Trans RF BJT NPN 4V 0.15A 500mW 4-Pin(3+Tab) SOT-343 T/R Automotive AEC-Q101
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical BFP 650 H6327 17 17
    • 1 -
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    • 100 $4.63
    • 1000 $4.63
    • 10000 $4.63
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    Infineon Technologies AG BFP650FH6327XTSA1

    - Tape and Reel (Alt: BFP650FH6327XTSA1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas BFP650FH6327XTSA1 Tape & Reel 18 Weeks 3,000
    • 1 -
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    • 10000 $0.19
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    TME BFP650FH6327XTSA1 3,000
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    • 10000 $0.24
    Get Quote
    EBV Elektronik BFP650FH6327XTSA1 19 Weeks 3,000
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    Win Source Electronics BFP650FH6327XTSA1 41,140
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    • 1000 $0.36
    • 10000 $0.33
    Buy Now

    Infineon Technologies AG BFP650H6327

    RF SMALL SIGNAL BIPOLAR TRANSISTOR, 0.15A I(C), 1-ELEMENT, C BAND, SILICON GERMANIUM, NPN (Also Known As: BFP650)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components () BFP650H6327 2,982
    • 1 $0.35
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    • 100 $0.35
    • 1000 $0.16
    • 10000 $0.15
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    BFP650H6327 2,982
    • 1 $0.35
    • 10 $0.35
    • 100 $0.35
    • 1000 $0.16
    • 10000 $0.15
    Buy Now
    TME BFP650H6327 2,471 1
    • 1 $0.62
    • 10 $0.45
    • 100 $0.36
    • 1000 $0.36
    • 10000 $0.36
    Buy Now
    Win Source Electronics BFP650H6327 50,000
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    • 1000 $0.14
    • 10000 $0.11
    Buy Now

    Infineon Technologies AG BFP650FH6327

    Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME BFP650FH6327 89 1
    • 1 $0.27
    • 10 $0.26
    • 100 $0.23
    • 1000 $0.23
    • 10000 $0.23
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    BFP650 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: BFP650 High Linearity Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-13 RF & Protection Devices Edition 2012-09-13 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original
    bfp650ot343ot343-poot343-fp+1ot323-tp PDF

    BFP650

    Abstract: BGA420 T-25
    Contextual Info: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology


    Original
    bfp650ot343bga420t-25 PDF

    RBS 3000

    Abstract: BFP650 BFP650 noise figure BGA420 T-25 RBS INFINEON
    Contextual Info: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology


    Original
    bfp650ot343rbs 3000bfp650 noise figure+3bga420t-25rbs infineon PDF

    BFP650

    Contextual Info: BFP650 High Linearity Low Noise SiGe:C NPN RF Transistor Data Sheet Revision 1.0, 2010-10-22 RF & Protection Devices Edition 2010-10-22 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original
    bfp650ot343ot343-poot343-fp+1ot323-tp PDF

    germanium transistors NPN

    Abstract: BFP420F BFP650F GMA marking marking r5s
    Contextual Info: BFP650F NPN Silicon Germanium RF Transistor* • For medium power amplifiers and driver stages 3 • High OIP 3 and P-1dB 2 4 1 • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz • 70 GHz fT - Silicon Germanium technology


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    bfp650fbfp650maygermanium transistors npnbfp420f+2gma markingmarking r5s PDF

    transistor 1T

    Abstract: BFP650 equivalent
    Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4  For high power amplifiers  Ideal for low phase noise oscilators  Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz  Gold metallization for high reliability


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    bfp650vps05605ot343jul-01-2003+2transistor 1tbfp650 equivalent PDF

    BFP650 noise figure

    Abstract: data sheet germanium diode germanium transistors NPN npn germanium BFP650
    Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4  For high power amplifiers  Ideal for low phase noise oscilators  Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz  Gold metallization for high reliability


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    bfp650vps05605ot343curr26+5mar-27-2003bfp650 noise figuredata sheet germanium diodegermanium transistors npnnpn germanium PDF

    BFP650

    Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability


    Original
    bfp650vps05605ot343jan-08-2004 PDF

    RBS 3000

    Abstract: 1g28
    Contextual Info: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology


    Original
    bfp650ot343rbs 30001g28 PDF

    PH marking code

    Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability


    Original
    bfp650vps05605ot343ph marking code PDF

    Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability


    Original
    bfp650vps05605ot343 PDF

    BFP650

    Abstract: BFP650 noise figure AN077 infineon AN077 sdars C166 NF50 BFP650 2.4GHz lna
    Contextual Info: BFP650 High Linearity Low Noise SiGe:C NPN RF Transistor Data Sheet Revision 1.0, 2010-10-22 RF & Protection Devices Edition 2010-10-22 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original
    bfp650ot343ot343-poot343-fp+8ot323-tpbfp650 noise figurean077infineon an077sdarsc166nf50bfp650 2.4ghz lna PDF

    Contextual Info: BFP650F Linear Low Noise SiGe:C Bipolar RF Transistor • For medium power amplifiers and driver stages 3 • Based on Infineon' s reliable high volume Silicon 2 4 1 Germanium technology • High OIP3 and P -1dB • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz


    Original
    bfp650faec-q101 PDF

    marking r5s

    Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4  For high power amplifiers  Ideal for low phase noise oscilators  Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz  Gold metallization for high reliability


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    bfp650vps05605ot343oct-22-2002+1marking r5s PDF

    gummel

    Abstract: oscilators BFP650
    Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability


    Original
    bfp650vps05605ot343oct-13-2003+2gummeloscilators PDF

    80mAF

    Abstract: 6069 marking
    Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability


    Original
    bfp650vps05605ot343aug-16-2004+280maf6069 marking PDF

    Contextual Info: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and


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    540esdbfp540esd460l3bfr460l3+4434mhzbfp460360l3340l3 PDF

    3BR0665JF

    Abstract: 2qs02g BTN7970B ICB1FL02G ICE2qs01 equivalent stepper+434 3br0665 TLE8209-1
    Contextual Info: Evaluation boards for Automotive, Industrial and Multimarket Applications 2010 [ www.infineon.com/evalkits ] Contents Automotive 05 Motor control 11 Industrial control & automation 15 Power management 19 Lighting & LED 22 Consumer 25 Communication 30 Microcontroller


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    tc1797tc1197xc866xc886+13xc888xc800xc164cmxe164b192-h9214-g2-x-76003br0665jf2qs02gbtn7970bicb1fl02gice2qs01 equivalentstepper+4343br0665tle8209-1 PDF

    IPTV schematic diagram

    Abstract: AN245 BFP450 BFP750 saw EPCOS p750 cordless phone Transceiver IC WiMAX RF Transceiver BFP650 BFR380F C166
    Contextual Info: BF P750 Dri ver f or Wi Ma x 3 3 00 to 37 0 0M Hz applica tio n Applic atio n N ote A N 245 Revision: Rev. 1.0 2010-10-05 RF and P r otecti on D evic es Edition 2010-10-05 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


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    3700mhzan245bfp750iptv schematic diagram+7bfp450saw epcos p750cordless phone transceiver icwimax rf transceiverbfp650bfr380fc166 PDF

    Cordless Phone circuit diagram

    Abstract: 2.4GHz Cordless Phone circuit diagram BFP750 cordless phone circuit S parameters of 5.8 GHz transistor SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR RF MODULE CIRCUIT DIAGRAM dect Cordless Phone system block diagram murata wifi saw filter cordless phone ic
    Contextual Info: BF P750 BF P750 a s a Dri ve r A mpl i fi er for 5.8 G Hz Cor dl es s P hon e A ppl i c a t i ons Appl i c ati o n N ote A N 246 Revision: Rev 1.1 2010-09-24 RF and P r otec ti on D evi c es Edition 2010-09-24 Published by Infineon Technologies AG 81726 Munich, Germany


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    limitation1115000mhzbfp750an246+9cordless phone circuit diagram2.4ghz cordless phone circuit diagramcordless phone circuits parameters of 5.8 ghz transistorschematic diagram of wifi rf power transistorrf module circuit diagram dectcordless phone system block diagrammurata wifi saw filtercordless phone ic PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    p462-ndp463-ndlng295lfcp2ulng395mftp5u+11us2011schematic diagram atx power supply 500wpioneer pal 012a1000w inverter pure sine wave schematic diagram600va numeric ups circuit diagramswinbond bios 25064tle 9180 infineonsmsc mec 1300 nutbe schematic diagram inverter 2000wdk55circuit diagram of luminous 600va ups PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    gp-20fsq510 equivalentbta12 6008bta16 6008+7zigbee interface with avr atmega16precision triac control thermostatthyristor t 558 f eupecgw 5819 diodetransistor a564a564 transistorbsm25gp120 b2 PDF

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    upc8236mrfe6vpm74 7 segment displaymounting and soldering of rf transistors+6mobile jammer gsm 1800 mhz circuit diagramblf4g08ls-160arf amplifier mhz doherty 470-860rf transceiver 802.11acan10882m74 7 segment display input PDF

    TRANSISTOR 434

    Abstract: BFP650 HOME AUTOMATION USING GSM AN196 BFR380F bf 434 BFP450 ag 20 taiyo BFR380 RF MODULE 434Mhz
    Contextual Info: BF R38 0F Dri v er A m pl i fer fo r 434 M Hz I S MBan d A ppl i c ati ons Appl i c ati o n N ote A N 196 Revision: Rev1.1 2010-09-28 RF and P r otec ti on D evi c es Edition 2010-09-28 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


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    an196bfr380ftransistor 434bfp650+6home automation using gsmbf 434bfp450ag 20 taiyobfr380rf module 434mhz PDF