OSCILATORS Search Results

power supply scr 30 100 20000

Contextual Info: PIEZO TECHNOLOGY INC S'îE D • 7140704 0000253 T « P T E I VOLTAGE CONTROLLED CRYSTAL OSCILATORS T - 50-23 T'SO'Oy M/N X01061C HIGH FREQUENCY XO1045C X01195C X01140C 5 - 80 14 - 16 AND 28-32 20 - 50 10 - 150 12.26 ± 50 ppm 20.48 To be lockable 30 ± 0.2%

BFP650

Abstract: BGA420 T-25
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology

RBS 3000

Abstract: BFP650 BFP650 noise figure BGA420 T-25 RBS INFINEON
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology

germanium transistors NPN

Abstract: BFP420F BFP650F GMA marking marking r5s
Contextual Info: BFP650F NPN Silicon Germanium RF Transistor* • For medium power amplifiers and driver stages 3 • High OIP 3 and P-1dB 2 4 1 • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz • 70 GHz fT - Silicon Germanium technology

transistor 1T

Abstract: BFP650 equivalent
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4
For high power amplifiers
Ideal for low phase noise oscilators
Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz
Gold metallization for high reliability

BFP650 noise figure

Abstract: data sheet germanium diode germanium transistors NPN npn germanium BFP650
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4
For high power amplifiers
Ideal for low phase noise oscilators
Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz
Gold metallization for high reliability

BFP650

Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability

RBS 3000

Abstract: 1g28
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology

PH marking code

Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability

Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability

Contextual Info: BFP650F Linear Low Noise SiGe:C Bipolar RF Transistor • For medium power amplifiers and driver stages 3 • Based on Infineon' s reliable high volume Silicon 2 4 1 Germanium technology • High OIP3 and P -1dB • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz

marking r5s

Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4
For high power amplifiers
Ideal for low phase noise oscilators
Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz
Gold metallization for high reliability

Contextual Info: BFP650F NPN Silicon Germanium RF Transistor* • For medium power amplifiers and driver stages 3 • High OIP 3 and P-1dB 2 4 1 • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz • 70 GHz fT - Silicon Germanium technology

gummel

Abstract: oscilators BFP650
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability

SLAU367

Contextual Info: Product Folder Sample & Buy Technical Documents Tools & Software Support & Community MSP430FR5869, MSP430FR5868, MSP430FR5867, MSP430FR58671 MSP430FR5859, MSP430FR5858, MSP430FR5857 MSP430FR5849, MSP430FR5848, MSP430FR5847, MSP430FR58471 SLASE34A – MAY 2014 – REVISED JUNE 2014

RAKON TXO

Abstract: RAKON TXO 200 TXO710 TX2060 TXO700 TXO500 TXO710R-3 TCXO rakon TXO rakon CAT017
Contextual Info: PRODUCT SPECIFICATION MODEL TXO700 Temperature Compensated Crystal Oscillators Low profile surface mountable TCXO available in custom frequencies from 8.2MHz to 32MHz with a clipped sinewave output Product Description This Colpitts oscillator uses the direct two-port temperature

SMD fuse P110

Abstract: 74c914 transistor b733 transistor SMD p113 EPSON C691 MAIN npn transistor smd w19 smd diode c539 transistor b771 transistor c1015 transistor c1008 011
Contextual Info: 4 3 Figure 1: 2 1 ML300 CPU Table 1: ML300 CPU Virtex-II Pro Based Virtex-II Pro Based Block Diagram Table of Contents D D Infiniband HSSCD2 Dual Gig-E Fiber (Quad) Serial ATA (Dual) Sheet 1: Sheet 2: Sheet 3: Sheet 4: Sheet 5: Sheet 6: Sheet 7: Sheet 8:

marking vap

Contextual Info: TCT 0603 TCU 0805 Flat Chip R esistor Products T rim m a b le O verglaze Outer T erm inatio n plated pure Tin on N ickel Cerm et Resistive Layer 96 % A lum in a C eram ic S ubstrate Term inatio n Base 60 BEYSCHLAG Catalogue 1999 TCT 0603 Flat Chip Resistor P roducts

upd4069ubc

Abstract: DCRHYC12.00
Contextual Info: TYPE Ceramic Resonators CRHYC CRHYCP セラミック発振子 TYPE CRHYC CERASONATOR MHz Band with built-in capacitors CRHYCP for taping 5.0Max. 10.0 Max. 8.0Max. STAMP (3) (1) (2) CRHYCP (CRHYC for Taping) (3) OUT (2) G <内部接続図> 5.0 CRHYC (1)

Contextual Info: Product Folder Sample & Buy Technical Documents Tools & Software Support & Community MSP430FR5969, MSP430FR59691, MSP430FR5968, MSP430FR5967 MSP430FR5959, MSP430FR5958, MSP430FR5957 MSP430FR5949, MSP430FR5948, MSP430FR5947, MSP430FR59471 www.ti.com SLAS704C – OCTOBER 2012 – REVISED JUNE 2014

SLAU367

Contextual Info: Product Folder Sample & Buy Technical Documents Tools & Software Support & Community MSP430FR5869, MSP430FR5868, MSP430FR5867, MSP430FR58671 MSP430FR5859, MSP430FR5858, MSP430FR5857 MSP430FR5849, MSP430FR5848, MSP430FR5847, MSP430FR58471 www.ti.com SLASE34A – MAY 2014 – REVISED JUNE 2014

Contextual Info: Features * Utilizes the AVR RISC Architecture * AVR - High-performance and Low-power RISC Architecture - 118 Powerful Instructions - Most Single Clock Cycle Execution - 32 x 8 General Purpose Working Registers - Up to 10 MIPS Throughput at 10 MHz * Data and Nonvolatile Program Memory

MIL-PRF-55310

Abstract: crystal oscillator burn-in data 209 hybrid 410 MILO Hybrid Microcircuits GENERAL INSTRUMENT
Contextual Info: Table of Contents Q-TECH CORPORATION Specification Control Drawing Scope Scope Part Number Applicable Documents Specifications and Standards Specifications - Military Standards - Military Conflicting Requirements Customer Purchase Order Special Requirements

EIA-1608

Contextual Info: Introduction to BEYSCHLAG TCT 0603 TCU 0805 Flat Chip Resistor Products Trimmable Product Overview Flat Chip Resistor Products MELF Resistor Products Leaded Resistor Products Overglaze Outer Termination plated pure Tin on Nickel Resistor Arrays and Networks