RF TRANSISTOR 586 Search Results

Transistor C G 774 6-1

Abstract: C G 774 6-1 1041T060
Contextual Info: I MOTOROLA SC XSTRS/R F 4bE » • b3b?2SM 00=14722 T -3 MOTOROLA 3 ' 0 T ■flOTb 5 ■ I SEMICONDUCTOR I TECHNICAL DATA The RF Line HIGH FREQUEN CY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICO N designed specifically for broadband applications requiring low

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

BF824

Contextual Info: Philips Semiconductors Product specification PNP medium frequency transistor FEATURES BF824 PINNING • Low current max. 25 mA PIN • Low voltage (max. 30 V). 1 base 2 emitter 3 collector APPLICATIONS DESCRIPTION • RF stages in FM front-ends in common base

wb4 marking

Abstract: J152 mosfet transistor 2110 transistor
Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

Beckman 661

Abstract: 661 Beckman MRF134
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F M O S F E T Line 5.0 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2.0-400 MHz N-CHANNEL MOS BROADBAND RF POWER . . . d e s ig n e d fo r w id e b a n d la rg e -s ig n a l a m p lifie r a n d o s c illa to r

BFR92P

Contextual Info: 3 S E D • ö5 3b3 EG 0G17GQ2 T W ËSI P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS BFR92P _ 7_ • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 to 20 mA. C £ CECC-type available: CECC 50002/254.

Transistor BFR 191

Abstract: bfr 49 transistor transistor eb 2030
Contextual Info: BFR 92P NPN Silicon RF Transistor • For broadband am plifiers up to 2 GHz and fast non-saturated sw itches at co lle cto r currents from 0.5 to 20 mA. C E C EC C -type available: CECC 50002/254. ESD: E lectrostatic discharge sensitive device, observe handling precautions!

very simple walkie talkie circuit diagram

Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
Contextual Info: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.

double TRANSISTOR SMD MARKING CODE mc

Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
Contextual Info: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.

Motorola transistor smd marking codes

Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
Contextual Info: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,

marking N5 mmic

Abstract: mmic n5 marking n5 amplifier RF TRANSISTOR 586 EDS-101105 NGA-586 RF amplifier GHz driver n5 359 rf amplifier marking n5 SIRENZA MARKING
Contextual Info: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with

SIRENZA MARKING

Contextual Info: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with

Contextual Info: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with

BFG591 amplifier

Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
Contextual Info: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP

blf578

Abstract: MRF6V2300N ic tea 2025 NXP SMD TRANSISTOR MARKING CODE s1 TEA 2025 equivalent blf278 rf amplifier radar amplifier s-band 2SK163 GaN ADS HSMP3814
Contextual Info: RF マニュアル第 12版 RF製品用のアプリケーションおよび設計マニュアル 2009年6月 ハイパフォーマンス・アナログを体験 NXPの RF マニュアルでRF設計がこ れまでになく簡単に 『NXPの RF マニュアル 』 は、今日RF設計者向けに市場に出回っているレファレンス・ツー

SNA-586

Abstract: ECB-100330 Sirenza Microdevices sna586 DC-5GHZ SOT-86 NGA-586 Sirenza Microdevices, Inc
Contextual Info: Preliminary Preliminary SNA-586 Product Description Sirenza Microdevices’ SNA-586 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 5 GHz. The heterojunction increases breakdown voltage

mmic s5

Abstract: SNA-586 MMIC Amplifier s5 ECB-100330 SNA 586 datasheet NGA-586 sna 586 SNA586
Contextual Info: Preliminary Preliminary Product Description SNA-586 Stanford Microdevices’ SNA-586 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 5 GHz. The heterojunction increases breakdown voltage

Contextual Info: Philips Semiconductors bb53R31 002T2Q3 bOfi Apy Product specification BLV100 UHF power transistor N AUER PHILIPS/DISCRETE b'lE D PIN CONFIGURATION FEATURES • Internal input matching to achieve high power gain • Ballasting resistors for an optimum temperature profile

NRZL block diagram

Abstract: LT 5337 767.2 transistor LC resonant MCRF355 153 kHz RFID Manchester c source code using PIC A 673 C2 transistor cloak tag rf 200B
Contextual Info: M MCRF355/360 13.56 MHz Passive RFID Device with Anti-Collision FEATURES • • • • • • • • • • • • Carrier frequency: 13.56 MHz Data modulation frequency: 70 kHz Manchester coding protocol 154 bits of user-reprogrammable memory On-board 100 ms sleep timer

GE Transistor Manual

Abstract: transistor k 316 35820 transistor circuit design
Contextual Info: Microwave Transistor Bias Considerations Application Note 944-1 Introduction Often the least considered factor in microwave transistor circuit design is the bias network. Considerable effort is spent in measuring s-parameters, calculating gain, and optimizing

GE Transistor Manual

Abstract: cutler 35860 5988-0424EN transistor circuit transistor circuit design TRANSISTOR hFE-100
Contextual Info: Microwave Transistor Bias Considerations Application Note 944-1 Introduction Often the least considered factor in microwave transistor circuit design is the bias network. Considerable effort is spent in measuring s-parameters, calculating gain, and optimizing bandwidth and noise figure, while

BLV100

Abstract: itt 2222 ITT 232-2 ITT 2222 npn ITT 2222 A
Contextual Info: Philips Sem iconductors bbS3*ì31 □□ET2D3 bdfi * APX BLV100 UHF power transistor •N AMER PHILIPS/DISCRETE b'ìE D PIN CONFIGURATION FEATURES • Internal input matching to achieve high power gain • Ballasting resistors for an optimum temperature profile

MAX2430

Abstract: MAX2430ISE JR060
Contextual Info: 19-1093; Rev 0; 7/96 UAL MAN ET KIT E N H TIO ATA S LUA D EVA LOWS L FO Low-Voltage, Silicon RF Power Amplifier/Predriver _Features ♦ Operates Over the 800MHz to 1000MHz Frequency Range The MAX2430 is ideal as a driver amplifier for portable