CP666
Abstract: CP640 Crystalonics FERROXCUBE 1041t060 Crystalonics Cp666 trifilar transistor fet N-Channel RF Amplifier CP664 CP665 CRY664UA
Contextual Info: Web site: WWW.Crystalonics.com Phone: 781 270-5522 R R O A n R A M n RF FF T 1 X \ y / \ l—S k • / / \ 1 1 l_ S 1 X 1 1 L . 1 N-CHANNEL FIELD EFFECT TRANSISTOR niun u t inmivu ^ n Mi N u c n r minu v n r /-uviruiricr» GEOMETRY 424 FOR USE IN COMMON GATE CONFIGURATION
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cp640cry640uacp664cry664ua+9cp665cry665uacp666cry666uacrystalonicsferroxcube 1041t060crystalonics cp666trifilartransistor fet n-channel rf amplifier
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Transistor C G 774 6-1
Abstract: C G 774 6-1 1041T060
Contextual Info: I MOTOROLA SC XSTRS/R F 4bE » • b3b?2SM 00=14722 T -3 MOTOROLA 3 ' 0 T ■flOTb 5 ■ I SEMICONDUCTOR I TECHNICAL DATA The RF Line HIGH FREQUEN CY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICO N designed specifically for broadband applications requiring low
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111iimz5558z5555z5556+11mz5557powec rm 1110rm 1100 powecmpc1000transistors jx 6822 ainverter welder 4 schematicsaa 14ztransistor si 6822stg 8810pl 15z diodegermanium transistor
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MRF517
Abstract: VK200 mrf559 mrf559 vk200 nf c4 npn MRF5812 RF Transistor Selection 2N4427 2N5179 2N6255 MRF4427
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product @ 60mA
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mrf517to-39mrf44272n4427+10mrf553mrf553tmrf6072n62552n5179vk200 mrf559mrf559 vk200nf c4 npnmrf5812rf transistor selection
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CP666
Abstract: CP640 ferroxcube 1041T060 1041T060 CP664 Crystalonics CP665 CRY640UA trifilar Crystalonics Cp666
Contextual Info: — f L = = • l i a Web site: WWW.Crystalonics.com j à u ^ m a ü c ^ i t —« n i l » ^ CP640 R R O A nR A M n RF FFT 1— s ■ X 1 l i— * 1— s# I ■ 1 i— * Fax: (631-585-4858 P h o n e : (631-981-6140) ■ X ■ ■ 1— ■ N -H H A N N FI FIFI D F F F F H T TR A N S IS T O R
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trifilar
Abstract: 1041T060 CP666 ferroxcube 1041T060
Contextual Info: B RO A D B A N D RF FET S I L I CO N E P I T A X I A L J UNCTI ON N - C H A N N E L F I E L D E FF ECT T R A N S I S T O R GEOMETRY 424 HIG H D Y N A M IC R A N G E H F A N D V H F A M P L IF IE R F O R U S E IN C O M M O N G A T E C O N F IG U R A T IO N
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5-50mhz5-50mh23-20pf82juh+51041t060/3d3trifilar1041t060cp666ferroxcube 1041t060
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ferroxcube 1041T060
Abstract: CP666 1041T060 teledyne transistor teledyne fet u
Contextual Info: TELEDYNE COMPONENTS SäE ' T - I l - £ ? ûTiTtoa aoûtss^ 1 D BROADBAND RF FET SILICO N E P IT A X IA L JUNCTION N -C H A N N E L F IE L D EFFECT TRANSISTOR GEOMETRY 424 HIGH DYNAMIC RANGE HF AND VHF AMPLIFIER FOR USE IN COMMON GATE CONFIGURATION • USABLE TO OVER 300 MHz
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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