REVOLUTION Search Results
REVOLUTION Datasheets Context Search
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tlr26480bg
Abstract: TILE64 PB010 BGA PROFILING TLR26480-BG-9C TILE64TM 866MHz
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tile64tile64tmtlr26480-bg-7ctlr26480-bg-9c+4 | |
IEC60721-3-3
Abstract: L4936E IEC60721 Storage of Products Supplied by Infineon Technologies IDC08S120E Infineon Automotive Technology
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idc08s120el4936eiec60721-3-3iec60721+2 | |
3d scanner
Abstract: scanner 3d automatic room light control TX5 transmitter
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3d scannerscanner 3dautomatic room light controltx5 transmitter | |
Storage of Products Supplied by Infineon Technologies
Abstract: IEC60721-3-3 IEC60721 L4926E
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idc73d120t6hidc05s120el4926estorage of products supplied by infineon technologies+2 | |
revolution counter
Abstract: display 2 digits vulkollan 21 Hostaform Baumer surface mount counter vulkollan
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revolution counterdisplay 2 digitsvulkollan 21hostaform+3 | |
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Contextual Info: SRAM AS5C512K8 Austin Semiconductor, Inc. 512K x 8 SRAM PIN ASSIGNMENT Top View HIGH SPEED SRAM with REVOLUTIONARY PINOUT 36-Pin SOJ (DJ & ECJ) 36-Pin CLCC (EC) AVAILABLE AS MILITARY SPECIFICATIONS •SMD 5962-95600 •MIL-STD-883 FEATURES • Ultra High Speed Asynchronous Operation |
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as5c512k836-pinmil-std-883compatibl60004mma+5 | |
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Contextual Info: PDM31034 PRELIMINARY 1 Megabit 3.3V Static RAM 128K x 8-Bit Revolutionary Pinout Description Features n High-speed access times Com’l: 9, 10, 12, 15 and 20 ns Ind’l.: 12, 15 and 20 ns Automotive: 15 and 20 ns n Low power operation typical - PDM31034SA |
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pdm31034pdm31034sa32-pin128kx8 | |
NL252018T-101J
Abstract: NL322522T-100J NLC1812-180K NLC322522T-4R7M NL1812 NLC1210-470K NL252018T-R33J NLF453232T-101K NL252018T-027J nl252018t-047j
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1800madimens96nl252018t-101jnl322522t-100j+8 | |
NL252018T-R56D
Abstract: NLF453232 16085A 1roJ NL252018T-5R6J-N NL322522T NL322522T-100J 4276A NLF453232T-221K L322522T
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nl252018nl322522nl453232nl565050+11 | |
MS3112E
Abstract: MS3112E-14-19P MS3112E14-19P MS3116F Gray Technologies
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enab-355-28vin/vout5-28vinms3112e14-19p+5 | |
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Contextual Info: NL Series — SMD Ferrite Wound Inductor These revolutionary, highly reliable wound chip inductors for automatic mounting, have been developed in response to the trend toward high density in electronic equipment. With metal terminals and a body of heat resistant resin, these |
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100cycles24hrs000hrs | |
BMN-35H
Abstract: gaussmeter rotary encoder volume AustriaMicrosystems 3D Hall AS5035 AS5035TR AS5040 SSOP16 SSOP-16 cylindrical permanent magnet
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as5035bmn-35hgaussmeterrotary encoder volume+6 | |
LUXEON Rebel LED
Abstract: rebel optical light diffuser RG40
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6ox25oluxeon rebel ledrebeloptical light diffuser+1 | |
01N60S5
Abstract: 01N60 SPD01N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193
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spu01n60s5spd01n60s5p-to252p-to251-3-1+5 | |
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388EN-6P
Abstract: 600EN-128-CBL 600EN128CBL
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600en-128-cbl600en-128-c24600en-128-b66600en-128-cn1+4 | |
IEC60721-3-3
Abstract: Storage of Products Supplied by Infineon Technologies sic wafer 100 mm bare die schottky diode IDT05S60
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idc05s60cel4724eiec60721-3-3storage of products supplied by infineon technologies+3 | |
4 Digit counter
Abstract: revolution counter Baumer 3 digit counter 4 stroke engine pdf files revolution surface mount counter 4H11 MR211 MR291
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4 digit counterrevolution counterbaumer3 digit counter+6 | |
revolution counter
Abstract: 4H11 HOSTAFORM U 126 4 Digit counter reset button
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revolution counter4h11hostaformu 126+2 | |
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Contextual Info: SEE NEW DESIGN RECOMMENDATIONS in te i REFERENCE ONLY 28F016SA FlashFile MEMORY Includes Commercial and Extended Temperature Specifications Revolutionary Architecture — Pipelined Command Execution — Program during Erase — Command Superset of Intel |
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28f016sa28f008sa56-lead28f032sa | |
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Contextual Info: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for |
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idt71v124sa10/12/15/20ns32-pin400-mil+3 | |
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Contextual Info: IS63LV1024 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT issr j u l y 1999 FEATURES DESCRIPTION • High-speed access times: 10,12 and 15 ns The IS S IIS63LV1024 is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary |
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is63lv1024iis63lv1024072-wordr400-mil+5 | |
40404040H
Abstract: 6115 l500m DPZ256
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dpz256x32v356x32v312fikihroughz256x32+9 | |
Dense-Pac MicrosystemsContextual Info: COPIA D P Z 128W 16A 3 Dense-Pac Microsystems. Inc. q 128K X 16 FLASH EEPROM DENSE-STACK M ODULE PRELIM IN ARY DESCRIPTION: The D PZ128W 16A3 "DEN SE-STACK" module is a revolutionary new memory subsystem using DensePac Microsystems' ceramic Stackable Leadless Chip |
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dpz128w16dpz128w16a3125-c120ns+6 | |
uejuContextual Info: V V, i -5 l i £7 DPZ256W16A3 SD PM ; Dense-Pac Microsystems, Inc ^ 2S6K X 16 FLASH EEPROM DENSE-STACK M ODULE PRELIMINARY DESCRIPTION: The DPZ256W16A3 “ DENSE-STACK" module is a revolutionary new memory subsystem using DensePac Microsystems' ceramic Stackable Leadless Chip |
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dpz256w16a3120ns150ns170ns+4 | |