REGULATOR K35 Search Results

a38v

Abstract: j251 VOLTAGE REGULATOR 230V circuit diagram 1251C Used Electronics
Contextual Info: KA79LXXA FIXED VOLTAGE REGULATOR NEGATIVE 3-TERMINAL 0.1A NEGATIVE VOLTAGE REGULATORS TO-92 These regulator* employ internal current limiting and thermal - shutdown, making them essentially in­ destructible. FEATURES • • • • Output current up to 100mA

RP112N321D

Contextual Info: RP112x SERIES Low Noise 150mA LDO REGULATOR NO.EA-258-131024 OUTLINE The RP112x Series are CMOS-based voltage regulator LDO ICs, which have been developed using the CMOS process technology, with high output voltage accuracy, low-supply current, low On-resistance transistor,

K95 Package

Abstract: TK721 K75 Package diode k70 tk72175
Contextual Info: APPLICATION MANUAL Negative-input Negative-output Regulator IC TK721xxCS CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 5. ORDERING INFORMATION 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS

k55 diode

Abstract: diode k70 TK721 TK72160Cs TK72150 TK72130 TK721XXC
Contextual Info: APPLICATION MANUAL Negative-input Negative-output Regulator IC TK721xxCS CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 5. ORDERING INFORMATION 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS

K3561

Abstract: transistor k3561 2SK3561 2SK3561 equivalent k3561 Silicon N Channel MOS Type k3561 transistor 2sk3561 datasheet
Contextual Info: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.)

transistor k3567

Abstract: k3567 2sk3567 2SK3567 equivalent k3567 transistor 288MH k3567 B L k3567 voltage marking code TC
Contextual Info: 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3567 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.)

k3564

Abstract: transistor K3564 2SK3564
Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.)

transistor K3565

Abstract: K3565 transistor K3565 compatible transistor
Contextual Info: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.)

K3566

Abstract: K3566 transistor K3566 data sheet 2sk3566 transistor k3566 K3566 data equivalent k3566 K3566 equivalent
Contextual Info: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.)

K3561

Abstract: transistor compatible k3561 transistor k3561 k3561 transistor 2SK3561 equivalent k356 2SK3561 k3561 Silicon N Channel MOS Type k3561 transistor application
Contextual Info: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)

2SK3538

Contextual Info: 2SK3538 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3538 Switching Regulator, DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 75 mΩ (typ.) · High forward transfer admittance: |Yfs| = 7.0 S (typ.) ·

K3563

Abstract: K3563 Transistor 2SK3563 2sK3563 datasheet K3563 applications
Contextual Info: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)

transistor K3565

Abstract: k3565 k3565 transistor K3565 data 2SK3565 K3565 compatible transistor K356
Contextual Info: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.)

transistor compatible k3568

Abstract: k3568 transistor k3568 K3568 data 2SK3568 K3568 equivalent 2SK3568 equivalent k3568 transistor 2sk3568 datasheet
Contextual Info: 2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.)

Contextual Info: 2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK3544 Unit: mm Switching Regulator Applications • • • • Low drainsource ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.)

K3566

Abstract: K3566 transistor 2sk3566 2SK3566 equivalent K3566 data transistor k3566 transistor 2sk3566
Contextual Info: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.)

2SK3544

Contextual Info: 2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK3544 Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.)

transistor compatible k3569

Abstract: K3569 transistor k3569 2SK3569 equivalent 2SK3569 K3569 equivalent transistor compatible 2SK3569 K3569 data K3569 DATASHEET transistor 2SK3569
Contextual Info: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.)

K3538

Abstract: 2SK3538 SC-97 SC97 Sc97 MARKING "k3538" SC-97 JEDEC
Contextual Info: 2SK3538 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3538 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)

2SK3544

Contextual Info: 2SK3544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3544 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.)

k3564

Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.)

k3564

Abstract: transistor K3564 K356 2SK35
Contextual Info: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.)

2SK3544

Abstract: marking code 346
Contextual Info: 2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK3544 Unit: mm Switching Regulator Applications • • • • Low drainsource ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.)

2sk3562

Abstract: k3562 transistor K3562 transistor k3562 k3562 voltage transistor compatible k3562 toshiba k3562 2SK3562 K3562
Contextual Info: 2SK3562 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3562 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.)