QDD1 Search Results

Contextual Info: b3E J> m 45S 1 Ö 7S GATE ARRAYS QDD1Q2G ^ 5 5 • H 0 N 3 Honeywell HONE YÜ1ELL/S S E C RICMOS SEA OF TRANSISTORS GATE ARRAY HR1060 FEATURES RADIATION HARDNESS OTHER • Total Dose Hardness of >1x106 rad Si02 • Wafers from DESC certified QML 1.2 ¡im process

Contextual Info: DAICO INDUSTRIES INC blE D • QDD177S IDT DAI FEATURES ■ 3 0 - 5 0 0 MHz ■ 0.5 dB LSB, 63.5 dB Range ■ TTL Control ■ 38 Pin Surface Mount Package PIN Diode 7 Section A ■ See DA0295 For 38 Pin DIP Version ■ See 100C 1595 For Connectorized Version

74C14

Abstract: CH1827
Contextual Info: CERMETEK MICROELECTRONICS m le r o * l» o tr o n lc a bäE » • 20GSÖÜ3 QDD13bb T25 M C E R CH1827 Family of Ultra Low Profile Data Access Arrangement for PCMCIA Technology patent pending. INTRODUCTION The CH1827 fits inside the PCMCIA package so that a voice,

VH048H

Abstract: QDD134S VH148H VH248H 9915 H
Contextual Info: SbE ]> fllCROSEMI CORP/ filCRO • bllS'JQ? QDD1345 ETT ■ n<2L " ^ 2 *3 - 0 1 / HERB M IC R O O U A LIT V / SEMICONDUCTOR. INC High Efficiency Rectifier Bridges 7 Amp. Designed for High Frequency Switching Power Supply Applications Extremely Low Leakage at High Temperatures

Westinghouse gold line

Contextual Info: .POlüEREX IN C »F| 7 2 ^ 2 1 QDD1C]D4 4 D Stud M ount ASSEMBLIES Rectifier Gold Line Current Rating Voltage Ratings 26-45 Amps 400-800 Volts ASSEMBLIES Type Number Mounting Mech. Data Pg. 30-31 Elee. Data Pg. 29 Current Rating Voltage Ratings 1000 45 38

Contextual Info: Optical Switches 341*1738 QDD1017 1 4DE D FASCO INDS/ SENISYS CLI800 CLI810 CLI820 CLI830 CLI835 GENERAL DESCRIPTIONS — This optical switch series couples a gallium arsenide infrared emitting diode and a silicon phototransistor sensor. This series offers the lowest

HM65664

Contextual Info: 4R E 5ôf c . ûM5b D QDD1D71 ^Q^ •MflHS Septem ber 1990 MAT RA M H S HM 65664 DATA SHEET 8 Kx8 ULTIMATE CMOS SRAM FEATURES 300 AND 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME GATED INPUTS : NO PULL-UP/DOWN

A5 GNA

Abstract: hm65664 HM-65664 65664 HM 65664 65664A
Contextual Info: 4R E 5ôf c . ûM5b D QDD1D71 ^Q^ •MflHS Septem ber 1990 MAT RA M H S HM 65664 DATA SHEET 8 Kx8 ULTIMATE CMOS SRAM FEATURES 300 AND 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME GATED INPUTS : NO PULL-UP/DOWN

CMS3216LAF

Abstract: CMS3216LAG CMS3216LAH
Contextual Info: CMS3216LAx-75xx 32M 2Mx16 Low Power SDRAM Revision 0.2 January, 2007 Rev0.2, Jan. 2007 CMS3216LAx-75xx Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions

Contextual Info: CMS4A16LAx–75Ex 128M 8Mx16 Low Power SDRAM Revision 0.5 May. 2007 Rev. 0.5, May. ‘07 CMS4A16LAx–75Ex Document Title 128M(8Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1

Flash MCp nand DRAM 107-ball

Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
Contextual Info: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM

Contextual Info: TELTONE CORP ÖTBHHMS D O D l i m ta BÖE D M-981 m M-981 PRECISE CALL PROGRESS TONE DETECTOR The Teltone M-981 is an integrated circuit precise tone detector for special purpose use in automatic following of switched telephone calls. The circuit uses low-power CMOS

Contextual Info: CMS4A32LAx–75Ex 128M 4Mx32 Low Power SDRAM Revision 0.6 May. 2007 Rev. 0.6, May. ‘07 CMS4A32LAx–75Ex Document Title 128M(4Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1

Contextual Info: THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO POSITRON1CAND ITS SUBSIDIARIES. POSITRONIC BELIEVES THE DATA ON THIS DRAWING TO BE RELIABLE, SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION AND RISK. POSITRONIC ASSUMES NO RESPONSIBILITY FOR

Contextual Info: Introduction This manual provides the information needed to configure the PSX Family devices using the JTAG interface. It is intended for users who plan to write their own code to configure the PSX devices. In addition, this manual explains how the boundary scan features implemented in the PSX devices can be used

Contextual Info: Honeywell Military & Space Products Preliminary 32K x 8 STATIC RAM— Low Power SOI \ HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |u.nn Low Power Process (Leff= 0.55 |am) • Read/Write Cycle Times < 17 ns (Typical)

DR500

Abstract: DR3003 DR1200 DR800
Contextual Info: AMERICAN/ELECTRONIC b3E I> • Db?b7M3 OOOIGOI W «EDI FAST RECOVERY HIGH VOLTAGE 25 mA MINIATURE SILICON RECTIFIERS • SMALL SIZE M O LDED PACKAGE • PRV 3,000 TO 12,000 VO LTS • A VA LA N CH E CHARACTERISTICS • LOW LEAKAGE EDI Type PRV Volts COLOR

Contextual Info: PowerPC 403GC 32-Bit RISC Embedded Controller Features Overview • PowerPC RISC CPU and instruction set architecture • Glueless interfaces to DRAM, SRAM, ROM, and peripherals, including byte and half-word devices • Separate instruction cache and write-back

Contextual Info: Data Sheet 1.5 MEGARECTIFIERS GPfSA. 15MSeries semiconductor Mechanical Dimensions JEDEC DO-15 -nr I r t .104X -230 I . 1.00 M i n . . .300 1 1 1 T Features E le c t r ic a l M a x im u m • HIGH TEMPERATURE METALLURG1CALLY BONDED COHSTRUCTION ■ 0.8 AMP OPERATION @ T = 55°C , WITH

Contextual Info: mss S ILIC O N P H O T O T R A N S IS TO R “ PIG TA IL” 61053 TYPE G S 3020 O P T O E LE C TR O N IC PRODUCTS D IV IS IO N G ENERAL DESCRIPTION MINIATURE LIGHT SENSOR WITH NARROW ANGULAR RESPONSE GLASS/METAL WELDED HERMETIC PACKAGED Mii 61053 is an N-P-N Planar Silicon Photodarlington Transistor in a lensed coaxial package

Contextual Info: ESMT M12L64164A Revision History Revision 1.0 13 Dec. 2001 - Original Revision 1.1 (10 Jan. 2002) - Add -6 spec Revision 1.2 (30 Jan. 2002) - Delete Page44 PACKING DIMENSION 54-LEAD TSOP(II) SDRAM (400mil) (1:4). Revision 1.3 (26 Apr. 2002) - tRFC : 60ns. (Page5)

K4S561633C

Abstract: K4S561633C-RL
Contextual Info: K4S561633C-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 0.7 December 2001 Rev. 0.7 Dec. 2001 K4S561633C-RL(N) CMOS SDRAM Revision History Revision 0.0 (April 4. 2001, Target) • First generation of 256Mb Low Power SDRAM without special function(V DD 3.0V, VDDQ 3.0V).

CYL008M162FFBU-1ABAI

Abstract: M2A2
Contextual Info: PRELIMINARY CYL008M162FFB 128-Mbit 8-Mbit x 16 Low-Power MoBL4 SDRAM Features — Deep Sleep Mode — Self Refresh Mode; standard and low power • Functionality • Temperature: –40°C to +85°C — Internal 4 Bank Operation • 8 mm x 8 mm x 1.0 mm 54-ball 0.8 mm FBGA Package

CMS3216LAF

Abstract: CMS3216LAG CMS3216LAH
Contextual Info: CMS3216LAx-75Ex 32M 2Mx16 Low Power SDRAM Revision 0.1 November, 2005 Rev0.1, Nov. 2005 CMS3216LAx-75Ex Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions