QC DIODE Search Results

Contextual Info: C3D06065E VRRM = 650650 VRRM V V Silicon Carbide Schottky Diode IF ITF;C=135˚C = 9.5 TC<135˚C 8.6AA Z-Rec Rectifier Qc Qc = 15 nC = nC Features • • • • • • • Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage

Contextual Info: C3D06065A VRRM = 650650 VRRM V V Silicon Carbide Schottky Diode IF ITF;C=135˚C = 8.5 TC<135˚C 8.6AA Z-Rec Rectifier Qc Qc = 16 nC = nC Features • • • • • • • Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage

C2D10120A

Contextual Info: C2D10120A VRRM VRRM= 1200 = 1200 V V Silicon Carbide Schottky Diode Zero R ecovery Rectifier Features • • • • • • • IF TC=135˚C = 14.5 A IF = 10 A Qc nC 61 nC Qc = 61 Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage

Contextual Info: C3D04065A VRRM = VRRM = 650650 V V Silicon Carbide Schottky Diode IF ITF;C=135˚C 7.5 TC<135˚C= 7.6AA Z-Rec Rectifier Qc Qc = 8.5 = 8.5 nC nC Features • • • • • • • • Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application

Contextual Info: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD Quality Certified No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. ISO 9001:2008 ISO 14001:2004 Licence No: TA1062-QC-EC Licence No: TA1062-QC-EC Environmentally Certified

Contextual Info: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD Quality Certified No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. ISO 9001:2008 ISO 14001:2004 Licence No: TA1062-QC-EC Licence No: TA1062-QC-EC Environmentally Certified

SDP20S120D

Abstract: C4692 SEMISOUTH sdp20s120 solar inverter SemiSouth Laboratories
Contextual Info: Silicon Carbide PRELIMINARY SDP20S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature

SEMISOUTH

Abstract: SDP60S120D SemiSouth Laboratories sdp60s
Contextual Info: Silicon Carbide SDP60S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current

Contextual Info: C4D10120E VRRM Silicon Carbide Schottky Diode Qc Features = 52 nC Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF Benefits • •

SEMISOUTH

Abstract: SDP10S120D C2652 induction heating schematic silicon carbide "silicon carbide" device
Contextual Info: Silicon Carbide SDP10S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 150 °C Maximum Operating Temperature - Zero Reverse Recovery Current

SEMISOUTH

Abstract: SDA10S120 C-183 silicon carbide
Contextual Info: Silicon Carbide PRELIMINARY SDA10S120 Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current

SEMISOUTH

Abstract: SDA05S120 sine wave ups SCHEMATIC silicon carbide C15600 solar inverter SemiSouth Laboratories
Contextual Info: Silicon Carbide PRELIMINARY SDA05S120 Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current

d06s60

Abstract: D06S60C smd diode marking code UJ T-1228 SDB06S60 SDP06S60 SDT06S60 d 132 smd diode diode smd marking code 435
Contextual Info: SDP06S60, SDB06S60 SDT06S60 Preliminary data Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode Product Summary V VRRM 600
Revolutionary semiconductor material - Silicon Carbide
Switching behavior benchmark Qc 21 nC
No reverse recovery

c4d30120d

Contextual Info: C4D30120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 43A* Z-Rec Rectifier Qc Features • • • • • = 155nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching

Contextual Info: SDP04S60 SDD04S60 Preliminary data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery IF

Contextual Info: C4D40120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 54A* Z-Rec Rectifier Qc Features • • • • • = 198nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching

Contextual Info: C4D40120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 54A* Z-Rec Rectifier Qc Features • • • • • = 198nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching

Q67040-S4370

Contextual Info: SDP06S60 SDB06S60 Preliminary data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery IF

P-TO252

Abstract: D04S60 diode schottky 600v TO252 rthjc Q67040-S4368 Q67040-S4369 SDD04S60 SDP04S60 SDT04S60
Contextual Info: SDP04S60, SDD04S60 SDT04S60 Preliminary data Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode Product Summary
Revolutionary semiconductor V 600 VRRM material - Silicon Carbide
Switching behavior benchmark Qc 13 nC
No reverse recovery

to220 pcb footprint

Abstract: D04S60 P-TO252 Schottky diode TO220 d 1398 infineon 6260 TO252-3 rthjc Q67040-S4368 Q67040-S4369 Q67040-S4445
Contextual Info: SDP04S60, SDD04S60 SDT04S60 Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery

d12s60

Abstract: SDT12S60 diode schottky code 03 Schottky diode TO220 Q67040-S4470 US180
Contextual Info: SDT12S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 30 nC • No reverse recovery

D05S60

Abstract: schottky 400v Q67040S4644 SDT05S60
Contextual Info: SDT05S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 14 nC • No reverse recovery

D05S60

Abstract: Q67040S4644 SDT05S60
Contextual Info: SDT05S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 14 nC • No reverse recovery

Contextual Info: SDP10S30 SDT10S30 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide V 300 VRRM • Switching behavior benchmark • No reverse recovery Qc 23 nC • No temperature influence on