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    Q101 Search Results

    Q101 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    1SS352
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.1 A, USC, AEC-Q101 Datasheet
    1SS307E
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.1 A, ESC, AEC-Q101 Datasheet
    1SS302A
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.1 A, USM, AEC-Q101 Datasheet
    1SS361FV
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.1 A, VESM, AEC-Q101 Datasheet
    SSM6K819R
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Datasheet

    Q101 Datasheets (5)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    Q10-100
    Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF 122.22KB 1
    Q10-100T
    Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF 122.22KB 1
    Q10-12
    EMCO High Voltage Ultra-Miniature DC to HV DC Converter Original PDF 452.89KB 2
    Q101-5
    EMCO High Voltage Ultra-Miniature DC to HV DC Converter Original PDF 452.89KB 2
    Q101N-5
    EMCO High Voltage Ultra-Miniature DC to HV DC Converter Original PDF 452.89KB 2
    SF Impression Pixel

    Q101 Price and Stock

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    Amphenol Corporation OQ101H010000G

    OQ-3.5- 10P with flange black 90degree - Bulk (Alt: OQ101H010000G)
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    Avnet Americas OQ101H010000G Bulk 810 9 Weeks, 1 Days 1
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    Amphenol Corporation OQ1012510000G

    - Bulk (Alt: OQ1012510000G)
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    Avnet Americas OQ1012510000G Bulk 2,310
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    Avnet Abacus OQ1012510000G 2,310 16 Weeks 330
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    NIC Components Corp NRB-KQ101M400V16X31.5F

    - Bulk (Alt: NRB-KQ101M400V16X31.5F)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas NRB-KQ101M400V16X31.5F Bulk 40 Weeks 1,000
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    Amphenol Corporation OQ1012000300G

    - Bulk (Alt: OQ1012000300G)
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    Avnet Americas OQ1012000300G Bulk 3,240
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    Avnet Abacus OQ1012000300G 16 Weeks 3,240
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    Omega Engineering Q--10-110C-21/2-1/2

    DIALTEMP,BI-METAL STEM THERMOMETERS MODELS Q-(*) AND QP-(*), 1.16" HEAD - Bulk (Alt: Q--10-110C-21/2-1/2)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas Q--10-110C-21/2-1/2 Bulk 4 Weeks 1
    • 1 $83.70
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    Q101 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MUR360S

    Abstract: 320s
    Contextual Info: MUR305S - MUR360S CREAT BY ART Pb RoHS 3.0 AMPS. Surface Mount Ultrafast Power Rectifiers SMC/DO-214AB COMPLIANCE Features — For surface mounted application — Glass passivated junction chip — Low profile package — Built-in strain relief — Qualified as per AEC-Q101


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    smc/do-214abmur305smur360saec-q101+4rs-481mur305s-320smur340s-360s320s PDF

    Contextual Info: TK100F04K3L MOSFETs Silicon N-channel MOS U-MOS TK100F04K3L 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V)


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    tk100f04k3laec-q101o-220sm PDF

    SOT 23 marking code a6 diode

    Contextual Info: BAS16-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Ultra fast switching speed • Surface mount package ideally suited for automatic insertion • High conductance • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in


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    bas16-vaec-q1012002/95/ec2002/96/ec+4ot-23bas16-v-gs182011/65/eusot 23 marking code a6 diode PDF

    Contextual Info: SQS464EEN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Typical ESD Protection 800 V • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd


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    sqs464eenaec-q1012002/95/ecsqs464een-t1-ge3+22011/65/eu12-mar-12 PDF

    SQS404EN-T1-GE3

    Abstract: marking D3 TSOP-6 PPAK1212
    Contextual Info: SQS404EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


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    sqs404enaec-q1012002/95/ecsqs404en-t1-ge3+42011/65/eu12-mar-12marking d3 tsop-6ppak1212 PDF

    Contextual Info: SQM120N04-1m9 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 40 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.0019


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    sqm120n04-1m9aec-q101o-263sqm120n04-1m9-ge3+32011/65/eu2002/95/ec12-mar-12 PDF

    SQ2303ES

    Abstract: marking code 604 SOT23
    Contextual Info: SQ2303ES www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


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    sq2303eso-236ot-23aec-q101+42002/95/ecsq2303es-t1-ge32011/65/eumarking code 604 sot23 PDF

    SQ2318ES

    Contextual Info: SQ2318ES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested


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    sq2318eso-236ot-23aec-q101+32002/95/ecsq2318es-t1-ge32011/65/eu PDF

    land pattern for TSOP input id

    Abstract: SQS423EN-T1-GE3
    Contextual Info: SQS423EN www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd PRODUCT SUMMARY VDS (V) - 30 RDS(on) () at VGS = - 10 V • 100 % Rg and UIS Tested 0.021 RDS(on) () at VGS = - 4.5 V


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    sqs423enaec-q101sqs423en-t1-ge32011/65/eu+32002/95/ec12-mar-12land pattern for tsop input id PDF

    100 20L A1 diode

    Abstract: SQD30N05-20L-GE3
    Contextual Info: SQD30N05-20L www.vishay.com Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd 55 RDS(on) () at VGS = 10 V 0.020 RDS(on) () at VGS = 4.5 V 0.026 ID (A)


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    sqd30n05-20laec-q101o-252sqd30n05-20l-ge3+42011/65/eu2002/95/ec12-mar-12100 20l a1 diode PDF

    Contextual Info: SQS482EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0085 RDS(on) () at VGS = 4.5 V


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    sqs482enaec-q101sqs482en-t1-ge32011/65/eu+22002/95/ec12-mar-12 PDF

    TFBS2711

    Abstract: TFBS2711X01 windshield rain sensor "steering Angle Sensor" TEMD6200 solar sensor TEMT6200 TEMD6000FX01 TEMT6000FX01 TEMD5510FX01
    Contextual Info: V i s h ay I n t e r t ec h n o l o g y, I n c . Automotive Grade Optoelectronics Optoelectronics - AEC-Q101 Qualified Parts AEC-Q101 Qualified Par ts Vishay Optoelectronics – Automotive Grade by Design This catalog lists our AEC-Q101 qualified optoelectronics components, including LEDs, infrared


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    aec-q101vmn-sg2166-1111tfbs2711tfbs2711x01+8windshield rain sensorsteering angle sensortemd6200solar sensortemt6200temd6000fx01temt6000fx01temd5510fx01 PDF

    SOD-80 COLOR MARKING

    Contextual Info: BAV200, BAV201, BAV202, BAV203 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES • Silicon epitaxial planar diodes • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912


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    bav200bav201bav202bav203+6aec-q101od-80gs18/10k10k/boxgs08/2sod-80 color marking PDF

    2N06L35

    Abstract: 2N06L v5856 GS6010 PCB REV 3.5 IPD26N06S2L-35 2N06L3
    Contextual Info: IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 35 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    ipd26n06s2l-35pg-to252-3-112n06l35726-ipd26n06s2l-35+52n06lv5856gs6010pcb rev 3.52n06l3 PDF

    Contextual Info: LS4151 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Electrical data identical with the device 1N4151 • QuadroMELF package • AEC-Q101 qualified • Material categorization: For definitions of compliance


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    ls41511n4151aec-q101od-80+5gs18/10k10k/boxgs08/2ls4151-gs18ls4151gs08 PDF

    Contextual Info: LS4150 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Low forward voltage drop • High forward current capability • QuadroMELF package • AEC-Q101 qualified • Material categorization:


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    ls4150aec-q101od-80gs18/10k+510k/boxgs08/2ls4150gs18ls4150gs082011/65/eu PDF

    Contextual Info: SQ7415EN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile • Fast Switching • AEC-Q101 Qualified


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    sq7415enaec-q1012002/95/ecsq7415en-t1-e3+22011/65/eu12-mar-12 PDF

    LL4151-GS08

    Contextual Info: LL4151 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diodes • Electrical data identical with the device 1N4151 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see


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    ll41511n4151aec-q101od-80+5gs18/10k10k/boxgs08/2ll4151-gs18ll4151-gs08 PDF

    2955g

    Abstract: NVF2955T1G nvf2955 A1 SOT-223 MOSFET NVF2955PT1G NTF2955T1G
    Contextual Info: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • TMOS7 Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant


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    ntf2955nvf2955nvf2955pot-223+6ntf2955/d2955gnvf2955t1ga1 sot-223 mosfetnvf2955pt1gntf2955t1g PDF

    T20P06LG

    Abstract: P06LG T20 P06LG 20p06 NTDV20P06L marking T20 NTDV20P06LT4G NTDV20 20P06L ntd20p06lg
    Contextual Info: NTD20P06L, NTDV20P06L Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK Features • • • • Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast Switching AEC Q101 Qualified − NTDV20P06L These Devices are Pb−Free and are RoHS Compliant


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    ntd20p06lntdv20p06lntd20p06l/dt20p06lg+8p06lgt20 p06lg20p06marking t20ntdv20p06lt4gntdv2020p06lntd20p06lg PDF

    Contextual Info: BAT85S Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21


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    bat85saec-q1012002/95/ec2002/96/ec+5do-35tr/10tap/10bat85s-trbat85s-tap PDF

    BZG03C18

    Abstract: BZG03C24
    Contextual Info: BZG03C-Series www.vishay.com Vishay Semiconductors Zener Diodes FEATURES • High reliability • Voltage range 10 V to 270 V • Fits onto 5 mm SMD footpads • Wave and reflow solderable • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in


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    bzg03c-seriesaec-q1012002/95/ec2002/96/ec+6bzg03c-series-trbzg03c-series-tr36000/boxdo-214acbzg03c18bzg03c24 PDF

    Contextual Info: 1N914 www.vishay.com Vishay Semiconductors Fast Switching Diodes FEATURES • Fast switching speed • High reliability • High conductance • For general purpose switching applicions • AEC-Q101 qualified • Material categorization: For definitions of compliance


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    1n914aec-q101do-35tr/10k+450k/boxtap/10k1n914-tr1n914-tap PDF

    Contextual Info: BAT81S, BAT82S, BAT83S Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • AEC-Q101 qualified


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    bat81sbat82sbat83saec-q101+52002/95/ec2002/96/ecdo-35tr/102011/65/eu PDF