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    SQS423EN Search Results

    SQS423EN Datasheets (2)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SQS423EN-T1_GE3
    Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 16A POWERPAK1212 Original PDF 570.42KB
    SQS423ENW-T1_GE3
    Vishay Siliconix MOSFET P-CH 30V 16A PPAK 1212-8W Original PDF 224.5KB
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    Vishay Intertechnologies SQS423EN-T1_BE3

    Transistor MOSFET P-Channel 30V 16A Automotive 8-Pin PowerPAK - Tape and Reel (Alt: SQS423EN-T1_BE3)
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    Avnet Americas SQS423EN-T1_BE3 Tape & Reel 3,000
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    Vishay Intertechnologies SQS423ENW-T1_BE3

    P-CHANNEL 30-V (D-S) 175C MOSFET - Tape and Reel (Alt: SQS423ENW-T1_BE3)
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    Avnet Americas SQS423ENW-T1_BE3 Tape & Reel 24 Weeks 3,000
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    Vishay Intertechnologies SQS423ENW-T1_GE3

    - Tape and Reel (Alt: SQS423ENW-T1_GE3)
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    Avnet Americas SQS423ENW-T1_GE3 Tape & Reel 30 Weeks 3,000
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    TME SQS423ENW-T1_GE3 3,000
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    Avnet Asia SQS423ENW-T1_GE3 24 Weeks 3,000
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    EBV Elektronik SQS423ENW-T1_GE3 23 Weeks 3,000
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    Vishay Intertechnologies SQS423ENW-T1-GE3

    MOSFETs PPAK1218 P-CH 30V 16A
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    TTI SQS423ENW-T1-GE3 Reel 3,000
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    Vishay Huntington SQS423ENW-T1_GE3

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    Win Source Electronics SQS423ENW-T1_GE3 8,360
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    SQS423EN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    land pattern for TSOP input id

    Abstract: SQS423EN-T1-GE3
    Contextual Info: SQS423EN www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd PRODUCT SUMMARY VDS (V) - 30 RDS(on) () at VGS = - 10 V • 100 % Rg and UIS Tested 0.021 RDS(on) () at VGS = - 4.5 V


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    sqs423enaec-q101sqs423en-t1-ge32011/65/eu+32002/95/ec12-mar-12land pattern for tsop input id PDF

    sqs423

    Contextual Info: SPICE Device Model SQS423EN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    sqs423en2011/65/eu2002/95/ec12-mar-12+1sqs423 PDF

    Contextual Info: SQS423EN www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd PRODUCT SUMMARY VDS (V) - 30 RDS(on) () at VGS = - 10 V • 100 % Rg and UIS Tested 0.021 RDS(on) () at VGS = - 4.5 V


    Original
    sqs423enaec-q101sqs423en-t1-ge32002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: SQS423EN Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • Compliant to RoHS Directive 2002/95/EC


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    sqs423enaec-q1012002/95/ecsqs423en-t1-ge3+111-mar-11 PDF

    Contextual Info: SQS423EN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    sqs423enan60926-may-10 PDF

    sqs423

    Contextual Info: SQS423EN www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd PRODUCT SUMMARY VDS (V) - 30 RDS(on) () at VGS = - 10 V • 100 % Rg and UIS Tested 0.021 RDS(on) () at VGS = - 4.5 V


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    sqs423enaec-q101sqs423en-t1-ge32002/95/ec+42011/65/eujs709a02-oct-12sqs423 PDF

    2923 MARKING

    Abstract: SQS423EN-T1-GE3
    Contextual Info: SQS423EN Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • Compliant to RoHS Directive 2002/95/EC


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    sqs423enaec-q1012002/95/ecsqs423en-t1-ge3+218-jul-082923 marking PDF

    Contextual Info: SQS423EN Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • Compliant to RoHS Directive 2002/95/EC


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    sqs423enaec-q1012002/95/ecsqs423en-t1-ge3+22011/65/eu12-mar-12 PDF

    SQS423EN-T1-GE3

    Contextual Info: SQS423EN Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd


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    sqs423en2002/95/ecaec-q101sqs423en-t1-ge3+118-jul-08 PDF

    DPAK/TO-252

    Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the


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    ups-2726vmn-pl0469-1311dpak/to-252 PDF

    SQJ469ep

    Abstract: SQ4483BE
    Contextual Info: Vishay Intertechnology, Inc. AEC-Q101 QUALIFIED SQ RUGGED SERIES MOSFET s ThunderFET ≥ 100 V, Low On-Resistance and Low FOM OPTIMIZED PowerPAK® SO-8L Optimum High and Low Side Combination in a 5 mm x 6 mm Package for Synchronous Buck PowerPAK SO-8L 1/2 the Size of


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    aec-q101ts-16949vmn-ms6925-1406sqj469ep+1sq4483be PDF

    sq4435

    Abstract: SQP120N10-09
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs SMM Medical Devices Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the implantable medical market.


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    vmn-pl0469-1505sq4435sqp120n10-09 PDF

    SQ2315ES

    Abstract: SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10
    Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets Automotive A pplic ations m o sf e t s w w w. v i s h a y. c o m Selector Guide Powe r MOSFETs for Automotive A pplic ations POWER MOSFETs Vishay Siliconix Dedicated Automotive Process Flow Reduces Defects


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    aec-q101o-262o-263vmn-sg2151-1009+10sq2315essq2319essqm120p04-04lsq2360eessq3456evsqj848epsq2301essqj980epsq9945beysqm10 PDF

    VMN-SG2151-1406

    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param


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    aec-q101vmn-sg2151-1406 PDF

    SQ3427

    Abstract: sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309
    Contextual Info: V i s h ay I n terte c h n olo g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/ • Application notes: http://www.vishay.com/mosfets/automotive-mosfets/


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    aec-q101vmn-sg2151-1209docu33-4-9337-2727sq3427+9sq2308sqj463sqm120p04-04lsqj401epsq4532eytsop-6 footprintsq2361sqd2sq2309 PDF